Kabushiki Kaisha Toshiba

Toshiba Materials Co., Ltd.

Toshiba Lighting & Technology Corporation

Kazuaki Ootsuka

Masaaki Tamatani

Naomi Shida

Ryosuke Hiramatsu

Yoshihito Tsutsui

Hisayo Uetake

Hideto Furuyama

Yasushi Hattori

Akiko Suzuki

Hideo Tamura

Shinetsu Fujieda

Hiroki Iwanaga

Masami Okamura

Akio Amano

Hiroaki Oshio

Hironori Asai

Yukihiro Fukuta

Toshihide Takahashi

Tatsuoki Kono

Kenji Shimomura

A lighting device including a substrate, and at least three light emitting elements mounted on the substrate, each having an upper light emitting surface in rectangular shape and side light emitting surfaces in rectangular shape. The light emitting elements are positioned to surround a light-gathering region where the light emitting elements are not located, and one of the side light emitting surfaces of each light emitting element is directed to face approximately a central portion of the light-gathering region.

Lighting device, image pickup apparatus and portable terminal unit

The present invention relates to a light emitting apparatus including a semiconductor light emitting element and a transparent ceramic phosphor for converting a wavelength of a light emitted from the semiconductor light emitting element, wherein the semiconductor light emitting element emits an ultraviolet light, and the ceramic phosphor corresponding to the semiconductor light emitting element has (i) a minimum transmission of 0.1 to 40% under a wavelength of 350-420 nm and (ii) a transmission of 10 to 90% under an emission peak wavelength of the ceramic phosphor.

Light emission device

A process for producing a light-emitting semiconductor device includes: (i) mixing at least one low-molecular silane or at least one silanol with an alcohol solution containing an alkoxysiloxane to prepare a mixture solution, the amount of the silane or silanol being from 10% by weight to 50% by weight based on the dry weight of an encapsulating material to be formed; (ii) applying the mixture solution to a light-emitting element; (iii) vaporizing the alcohol solvent in the mixture solution applied and drying the residual mixture to thereby form the encapsulating material; and (iv) curing the encapsulating material.

Process for producing light-emitting semiconductor device

A method for manufacturing a fluorescent substance is provided, which includes mixing a raw material for Eu, a raw material for Si, at least one raw material powder of alkaline earth, and at least one selected from the group consisting of raw materials for La , Gd, Cs, and K to obtain a mixture of raw materials; pre-firing the mixture to obtain a baked material; mixing the baked material and firing in a reducing atmosphere consisting of a mixed gas of N2/H2 to obtain a first fired product; pulverizing the first fired product to obtain a pulverized first fired product; firing the pulverized first fired product in a reducing atmosphere consisting of N2/H2 to obtain a fluorescent substance consisting of an alkaline earth ortho-silicate; pulverizing the fluorescent substance to obtain a fluorescent particle; sieving the fluorescent particle; and providing a surface-covering material on a surface of the fluorescent particle.

Fluorescent substance and light-emitting device using the same

A europium-activated alkaline earth orthosilicate luminescent material is provided, which includes a compound having a composition represented by a following formula 1:(SrBaCaEu)SiO&#x2003;&#x2003;formula 1wherein, x, y, z and w satisfy following relational expressions 2, and 4 to 7, and are values satisfying the expression 3 when a, b, c and d are assumed to be 573, 467, 623 and 736, respectively:&#x2003;&#x2003;expression 2600&#x2266;&#x2003;&#x2003;expression 30&#x2266;/(1&#x2212;)&#x2266;0.95&#x2003;&#x2003;expression 40&#x2266;/(1&#x2212;)&#x2266;0.4&#x2003;&#x2003;expression 50&#x3c;/(1&#x2212;)&#x2266;0.95&#x2003;&#x2003;expression 60.02&#x2266;w&#x2266;0.2&#x2003;&#x2003;expression 7the luminescent material shows an emission band having a peak wavelength of 600 nm or more when the luminescent material is excited by ultraviolet radiation having a wavelength of 254 nm.

Luminescent material

Disclosed is a fluorescent substance comprising an alkaline earth ortho-silicate, the fluorescent substance being activated by Eu, and further comprising at least one selected from the group consisting of La, Gd, Cs and K.

An field effect transistor includes a first semiconductor region, a gate electrode insulatively disposed over the first semiconductor region, source and drain electrodes between which the first semiconductor region is sandwiched, and second semiconductor regions each formed between the first semiconductor region and one of the source and drain electrodes, and having impurity concentration higher than that of the first semiconductor region, the source electrode being offset to the gate electrode in a direction in which the source electrode and the drain electrode are separated from each other with respect to a channel direction, and one of the second semiconductor regions having a thickness not more than a thickness with which the one of second semiconductor regions is completely depleted in the channel direction being in thermal equilibrium with the source electrode therewith.

A luminescent material is provided, which includes a material formed of a single composition containing the main crystal phase and an activator which causes light emission. The material exhibits a narrowband light emission spectrum in a wavelength ranging from 540 nm to 550 nm and a broadband light emission spectrum in a wavelength ranging from 500 nm to 600 nm when the material is excited with light having the main light emission peak having a wavelength ranging from 370 nm to 460 nm.

Disclosed is a method for manufacturing a nitrogen-containing fluorescent substance comprising accommodating an oxide fluorescent substance containing two or more elements in a receptacle made of a material containing carbon, and sintering the oxide fluorescent substance in a mixed gas atmosphere containing nitrogen gas.

Growing community of inventors

Yokosuka, Japan

Kazuaki Ootsuka