Canon Kabushiki Kaisha

Kazuaki Ohmi

Kiyofumi Sakaguchi

Kazutaka Yanagita

Takao Yonehara

Hirokazu Kurisu

Osamu Ikeda

Shigeyuki Matsumoto

Shigetoshi Sugawa

Takeshi Ichikawa

Katsumi Nakagawa

Masato Yamanobe

Shoji Nishida

Masaaki Iwane

Yoshiyuki Osada

Ihachiro Gofuku

Tetsuya Shimada

Kunio Watanabe

Hitoshi Shindo

Keisuke Yamamoto

Nobuhiko Sato

Hiroshi Takagi

Takehiko Kawasaki

Norio Kaneko

Yasuhiro Sekine

Mitsuro Sugita

Masao Sugata

Hisanori Tsuda

Toshihiko Tsuji

Taiko Motoi

Yukihiro Hayakawa

Fumio Kishi

Masatake Akaike

Tetsuo Asaba

Shinji Tsutsui

Yasushi Kawasumi

Takahiko Ishiwatari

Fujio Iwatate

Takaaki Terashi

Tohru Kohda

Atsuko Shinjou

An exposure apparatus which forms a pattern on an object. The apparatus includes an exposure head structure in which a plurality of elemental exposure units are arrayed, each elemental exposure unit including (i) at least one light source for emitting exposure light and (ii) an optical element which forms an image of the at least one light source on the object, for exposing the object. Positions of the images of the at least one light source in a direction perpendicular to a surface of the object include plural positions different from each other. A sensor detects a position of the surface of the object and produces a detection result. A controller receives the detection result and controls the exposure head structure such that a pattern is formed on the object by the exposure is selected to expose the object based on the detection result by the sensor.

Exposure apparatus and device manufacturing method

This invention is to provide a technique of separating bonded substrate stacks having porous layers at a high yield. A separating apparatus () has a pair of substrate holding portions (). A bonded substrate stack () is sandwiched from upper and lower sides and horizontally held by the substrate holding portions () and rotated. A jet is ejected from a nozzle () and injected into the porous layer of the bonded substrate stack (), thereby separating the bonded substrate stack () into two substrates at the porous layer. Another separating apparatus () has a pair of substrate holding portions (), a nozzle () of rejecting a fluid to the porous layer of a bonded substrate stack (), and an abrupt operation prevention mechanism () for preventing the lower substrate holding portion () from abruptly moving downward but allowing it to moderately move when separating the bonded substrate stack ().

Sample separating apparatus and method, and substrate manufacturing method

A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number 28 silicon isotope is less than 92.5% on an average; dissolving a starting silicon whose concentration of mass number 28 silicone isotope whose mass number is more than 98% on an average in a melt for liquid-phase epitaxy until said starting silicon becomes to be a supersaturated state in said melt under reductive atmosphere maintained at high temperature: immersing said single crystal silicon substrate in said melt to grow a single crystal silicon layer on the surface of said porous layer of said single crystal silicon substrate; and peeling said single crystal silicon layer from a portion of said porous layer.

Process for producing single crystal silicon wafers

A detection apparatus for detecting a feature portion of a composite member having a structure in which a first member having a separation layer inside is brought into tight contact with a second member. The composite member has, as the feature portion, a portion at which a peripheral edge of the first member projects outside a peripheral edge of the second member. The apparatus includes a shift detection section which detects a shift between the peripheral edge of the first member and the peripheral edge of the second member along an outer periphery of the composite member and a determination section which determines the feature portion on the basis of a detection result by the shift detection section.

Method and apparatus for processing composite member

This invention is to provide a processing system suitable for manufacturing an SOI substrate. A processing system includes a scalar robot for conveying a bonded substrate stack held by a robot hand, and a centering apparatus, separating apparatus, inverting apparatus, and cleaning/drying apparatus disposed at substantially equidistant positions from a driving shaft of the scalar robot. When the robot hand is pivoted about the driving shaft in the horizontal plane and moved close to or away from the driving shaft, a bonded substrate stack or separated substrate is conveyed among the processing apparatuses.

Sample processing system

When a bonded substrate stack prepared by bonding a first substrate in which a single-crystal Si layer is formed on a porous layer, and an insulating layer is formed on the single-crystal Si layer to a second substrate is to be separated at the porous layer, serrate defects at the peripheral portion of the separated substrates are prevented. A fluid is ejected from an ejection nozzle () and injected into the porous layer of a bonded substrate stack () while rotating the bonded substrate stack () about an axis (C) in a direction (R), thereby separating the bonded substrate stack () into two substrates at the porous layer. When the peripheral portion of the bonded substrate stack () is to be separated, the ejection nozzle () is located within a range (B).

Separating apparatus, separating method, and method of manufacturing semiconductor substrate

To separate a composite member consisting of a plurality of bonded members without destructing or damaging it, a fluid is jetted against the composite member from a nozzle to separate it into a plurality of members at a position different from a bonding position.

Method and apparatus for separating composite member using fluid

A process for manufacturing a semiconductor wafer which has superior suitability for mass production and reproducibility. The process comprises the steps of preparing a first member which has a monocrystalline semiconductor layer on a semiconductor substrate with a separation layer arranged therebetween with a semiconductor wafer as the raw material, transferring the monocrystalline semiconductor layer onto a second member which comprises a semiconductor wafer after separating the monocrystalline semiconductor layer through the separation layer, and smoothing the surface of the semiconductor substrate after the transferring step so as to be used as a semiconductor wafer for purposes other than forming the first and second members.

Method of manufacturing semiconductor wafer method of using and utilizing the same

This invention relates to a composite member separating method in which a first member ( ) having a separation layer ( ) and a transfer layer ( ) on the separation layer ( ) is bonded to a second member ( ) is separated at a position different from the bonding interface between the first member ( ) and the second member ( ), the method comprising the steps of, applying a force asymmetric with respect to the interface to the end portion of the composite member to form a crack ( A) that runs from the surface of the first member ( ) to the separation layer ( ) through the transfer layer ( ), and then, growing the crack is grown along the separation layer ( ) to completely separate the composite member.

Composite member separating method, thin film manufacturing method, and composite member separating apparatus

A method of processing a composite member having a structure in which a first member having a separation layer inside is brought into tight contact with a second member. The composite member has a projecting portion at which a peripheral edge of the first member projects outside a peripheral edge of the second member. The method includes a detection step of detecting the projecting portion of the composite member using a sensor and a separation step of starting separating the composite member from the projecting portion detected in the detection step and then separating the composite member into two members at the separation layer.

This invention is to provide a processing system suitable for manufacturing, e.g., an SOI substrate. A processing system includes a turntable on which holding mechanisms for holding bonded substrate stacks are mounted at a substantially equal angular interval, a driving mechanism for pivoting the turntable through a predetermined angle to move the bonded substrate stacks or separated substrates held by said holding mechanisms to operation positions and a centering apparatus, separating apparatus, and cleaning/drying apparatus for processing the bonded substrate stacks or separated substrates at the operation positions.

In a method of manufacturing a bonded substrate stack by bonding a first substrate having a porous layer to a second substrate to prepare a bonded substrate stack, and separating the bonded substrate stack into two substrates at the porous layer, defects in the separation step are prevented. A first substrate having a porous layer inside, a single-crystal Si layer on the porous layer, and an SiO layer on the single-crystal Si layer is bonded to a second substrate. The outer peripheral portion of the substrate is oxidized to make the outer peripheral edge of the single-crystal Si layer retreat toward the inside to prepare a bonded substrate stack in which the outer peripheral edge of the single-crystal Si layer is located inside the outer peripheral edge of the bonding region. After that, the bonded substrate stack is separated into two substrates at the porous layer.

Substrate and method of manufacturing the same

When a bonded substrate stack prepared by bonding a first substrate in which a single-crystal Si layer is formed on a porous layer, and an insulating layer is formed on the single-crystal Si layer to a second substrate is to be separated at the porous layer, serrate defects at the peripheral portion of the separated substrates are prevented. A fluid is ejected from an ejection nozzle ( ) and injected into the porous layer of a bonded substrate stack ( ) while rotating the bonded substrate stack ( ) about an axis (C) in a direction (R), thereby separating the bonded substrate stack ( ) into two substrates at the porous layer. When the peripheral portion of the bonded substrate stack ( ) is to be separated, the ejection nozzle ( ) is located within a range (B).

To cause a crack at a fixed position in a separation layer, a method of separating a composite member includes the steps of forming a separation layer inside a composite member, forming inside the separation layer a stress riser layer in which an in-plane stress has concentratedly been produced to an extent that does not cause separation by the in-plane stress, and enlarging the in-plane stress to cause a crack in the stress riser layer, thereby separating the composite member.

Growing community of inventors

Yokohama, Japan

Kazuaki Ohmi