Hitachi, Ltd.

Hitachi Tokyo Electronics Co., Ltd.

Kazuaki Mizokami

Yasuhiro Mitsui

Takashi Irie

Michimasa Funabashi

Katsuhiko Itoh

Takeshi Tajima

Keiji Hasumi

Kazuo Nakano

Sadao Matsuoka

Katsumi Kuriyama

A mass spectrometer for analyzing trace impurities on a level between ppt and ppb contained in silicon material gas such as monosilane gas. The mass spectrometer includes an ion formation region, reaction region, and mass analysis region. Ion formation gas is introduced into the ion formation region and sample gas (silicon material gas) is introduced into the reaction region. The ion formation region ionizes ion formation gas by an ionizer and forms primary ions. When the pressure of ion formation gas is made higher than the pressure of sample gas, the ion formation gas flows into the reaction region from the ion formation region together with primary ions and is mixed with the sample gas. In the reaction region, an ion-molecule reaction is produced between the primary ions and trace impurities contained in the sample gas and the trace impurities contained in the sample gas are ionized. The ion intensity of trace impunities, the concentration of trace impurities in the sample gas is determined using a calibration curve. When the gas pressure in the reaction region is kept at almost 1 atmosphere, the reaction is promoted and when the ion-molecule reaction time is optimized according to the size of the reaction region and the voltage condition, impurities on a level between ppt and ppb can be detected and determined.

Atmospheric pressure ionization mass spectrometer

An atmospheric pressure, elevated temperature gas desorption apparatus which enables quanitiative analysis of impurities absorbed in or on the surface of a solid sample (semiconductor wafer, optical disc, etc.) is disclosed. The atmospheric pressure, elevated temperature gas desorption apparatus for desorbing impurities absorbed in or on the surface of a plate-like solid sample 18 into a carrier gas 19 in a chamber 6 under an atmospheric pressure while increasing the temperature of the solid sample 18 includes a desorption room 7A provided in the chamber 6 and connected through to a first gas supply system 1 for supplying the carrier gas 19, for desorbing impurities absorbed in or on the surface of the solid sample 18 into the carrier gas 19. A sample support room 7B is provided in the chamber 6 and is separated from the desorption room 7A by a partition member 6A. The solid sample 18 is in close contact with the partition member 6A. A heater 8 for heating the solid sample 18 is in close contact with the partition member 6A. A reserve room 9 is connected to the sample support room 7B and to a second gas supply system 13 for supplying a purge gas.

Atmospheric pressure, elevated temperature gas desorption apparatus

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Kodaira, Japan

Kazuaki Mizokami