Fujitsu Corporation

Fuji Photo Film Company, Limited

The University of Tokyo

Fujitsu Isotec Limited

Kazuaki Kurihara

Takeshi Shioga

John David Baniecki

Kazunori Yamanaka

Masatoshi Ishii

Masaharu Hida

Tsuyoshi Mita

Masataka Mizukoshi

Motonobu Kawarada

Masao Kondo

Akihiko Akasegawa

Teru Nakanishi

Nobuo Kamehara

Tsuyoshi Aoki

Kenichi Sasaki

Kanae Nakagawa

Shigeyoshi Umemiya

Tsukasa Itani

Yoshikatsu Ishizuki

Nagaaki Koshino

Taiji Sakai

Motoyuki Nishizawa

Keiji Watanabe

Kenji Maruyama

Yoshihiko Imanaka

Koichi Niwa

Mineharu Tsukada

Kazuaki Karasawa

Masaki Kurasawa

Hiromitsu Yokoyama

Hiromi Ogawa

Michinori Kutami

Ken-ichi Sasaki

Akitomo Teshima

Atsushi Saito

Norinao Kouma

Kishio Yokouchi

Yasuo Yamagishi

Norikazu Nakamura

Koji Omote

Eishin Yamakawa

Hiroshi Chiba

Masayuki Takeda

Hideki Yamawaki

Mamoru Kurashina

Shoichi Suda

Shigetoshi Ohshima

Osamu Tsuboi

Manabu Kai

Takashi Suzuki

Yoshiaki Sakamoto

Tomohisa Shingai

Shuji Koike

Masato Wakamura

Noriyasu Aso

Keishiro Okamoto

Yuji Yoshida

Akio Yano

Kenji Nomura

Masahiro Ono

Seigen Otani

Akihiko Miyaki

Keisuke Sato

Toshihiko Osada

Yasuo Naganuma

Kazuki Ogawa

Takuya Nishino

Makoto Kuwabara

Yasutoshi Kotaka

Yasuo Numata

Etsuro Udagawa

Shinobu Akashi

A thermoelectric generator includes a perovskite dielectric substrate containing Sr and Ti and having electric conductivity by being doped to n-type; an energy filter formed on a top surface of the perovskite dielectric substrate, the energy filter including a first perovskite dielectric film, which contains Sr and Ti, has electric conductivity by being doped to n-type, and has a conduction band at an energy level higher than that of the perovskite dielectric substrate; a first electrode formed in electrical contact with a bottom surface of the perovskite dielectric substrate; and a second electrode formed in electrical contact with a top surface of the energy filter. The thermoelectric generator produces a voltage between the first and second electrodes by the top surface of the energy filter being exposed to a first temperature and the bottom surface of the perovskite dielectric substrate being exposed to a second temperature.

Thermoelectric generator

A thermoelectric conversion element includes a film composed of a conductive oxide, a first electrode disposed on one end of the film composed of the conductive oxide, and a second electrode disposed on another end of the film composed of the conductive oxide, wherein the conductive oxide has a tetragonal crystal structure expressed by ABO, where 0.1&#x3c;x&#x3c;1, wherein the conductive oxide has a band structure in which a Fermi level intersects seven bands between a &#x393; point and an R point, and wherein the first electrode and the second electrode are disposed on the film composed of the conductive oxide so that electrical charge moves in a direction of a smallest vector among three primitive translation vectors of the crystal structure.

Method for producing thermoelectric conversion element

There is provided a sensor system capable of being used semi-permanently in a maintenance-free state without exchanging batteries as well as being installed in an already-existing manhole lid by a simple work on the spot, and having a measurement unit, a power source unit, and a communication unit, and installed in a manhole lid, wherein the power source unit includes a thermoelectric power generation module configured to generate electric power by a difference in temperature between a first heat transfer unit thermally connected to the manhole lid and a second heat transfer unit thermally connected to a heat radiating unit within a manhole, and the measurement unit and the communication unit are driven by electric power generated by the thermoelectric power generation module and measurement data of the measurement unit is transmitted to the outside via the communication unit.

Sensor module and manhole information collection/processing system

Thermoelectric conversion element and method for producing the same

A power generator includes layered-polymer piezoelectric element that is arranged on an object to be a heat source and a vibration source, and that generates electric power according to vibration transmitted from the object; a first heat conductor containing a flexible material that is arranged on the object, and that conducts heat from the object. The power generator includes a second heat conductor that is arranged on the first heat conductor and the layered-polymer piezoelectric element, and that conducts heat from the first heat conductor. Furthermore, the power generator includes a thermoelectric element that is arranged on the second heat conductor so as to be layered on the second heat conductor on the layered-polymer piezoelectric element, and that generates electric power according to inner temperature difference between temperature on a heat absorbing side obtained by the second heat conductor and temperature on a heat releasing side.

Power generator

A thermoelectric conversion device includes a perovskite film over a substrate and formed with first and second electrodes on the perovskite film, wherein the perovskite film includes a domain having a crystal orientation different from a crystal orientation of a crystal that constitutes the perovskite film.

Thermoelectric conversion device having perovskite crystal including grain domain

Recesses are formed on one surface of a substrate. A conductive film covers an inner surface of each of the recesses. This conductive film contacts a bump of a semiconductor device to be inspected and is electrically connected to the bump. It is therefore possible to prevent damages of the bump to be caused by contact of a probe pin.

Interconnection card for inspection, manufacture method for interconnection card, and inspection method using interconnection card

The invention relates to a semiconductor device, a method for manufacturing a semiconductor device and an electronic thermoelectric power generation device, a semiconductor device having a thermoelectric conversion element that is embedded in a semiconductor chip so as to be integrated with a semiconductor circuit can be implemented. A semiconductor substrate is provided with a through opening for a region in which a thermoelectric conversion element is to be formed, and a thermoelectric conversion element is embedded in the through opening, where the thermoelectric conversion element includes: a number of penetrating rods made of a thermoelectric conversion material; and an insulating reinforcement layer in which the penetrating rods are embedded and of which the thermal conductivity is lower than that of the thermoelectric conversion material.

Semiconductor device, method for manufacturing semiconductor device and electronic thermoelectric power generation device

An electric potential measuring apparatus includes a detecting unit, a generating unit, and a measuring unit. The detecting unit is provided on a surface of a measurement subject and detects a second signal including a first signal within a first frequency range from the measurement subject. The generating unit generates a fourth signal by averaging a third signal within a second frequency range outside the first frequency range. The measuring unit measures electric potential of the first signal included in the second signal detected by the detecting unit with reference to electric potential of the fourth signal generated by the generating unit.

Electric potential measuring apparatus

A thermoelectric conversion device includes a stack in which a first perovskite dielectric film, which includes Sr and Ti and has a first bandgap, and a second perovskite dielectric film, which includes Sr and Ti and has a second bandgap smaller than the first bandgap, are stacked alternately, each of the first and second perovskite dielectric films being doped to have an electric conductivity, the first and the second perovskite dielectric films having respective compositions such that there appears a bandoffset of 0.54 eV in maximum between a conduction band of the first perovskite dielectric film and a conduction band of the second perovskite dielectric film.

Thermoelectric conversion device

A thermoelectric conversion module includes: a first substrate having water permeability and thermal conductivity; a thermoelectric conversion element provided on the first substrate; a heat insulator having water permeability provided around the thermoelectric conversion element on the first substrate; and a second substrate disposed on the thermoelectric conversion element and the heat insulator and having water permeability and thermal conductivity.

Thermoelectric conversion module

P-type semiconductor sheets and n-type semiconductor sheets formed by mixing a powder of semiconductor material, a binder resin, a plasticizer, and a surfactant are prepared. In addition, separator sheets formed by mixing a resin such as PMMA and a plasticizer are prepared. Through holes are formed in each of the separator sheets and then filled with a conductive material. Thereafter, the p-type semiconductor sheet, the separator sheet, the n-type semiconductor sheet and the separator sheet are stacked. The resultant laminated body is cut into a predetermined size and then subjected to a baking process.

Thermoelectric conversion element

A superconductive filter includes a superconductive filter substrate having a dielectric substrate and a plurality of resonator patterns formed on a surface of the dielectric substrate, the plurality of resonator patterns including a superconductive material; a package accommodating the superconductive filter substrate; and an intermediate substrate disposed between an inner surface of the package and the superconductive filter substrate, and thermally coupling the package and the superconductive filter substrate wherein a difference between a degree of contraction of the intermediate substrate and the degree of contraction of the dielectric substrate is smaller than a difference between the degree of contraction of the dielectric substrate and the degree of contraction of the package, when the package, the intermediate substrate, and the dielectric substrate are cooled from room temperature to a critical temperature of the resonator patterns.

Superconductive filter with plurality of resonator patterns formed on surface of dielectric substrate

A filter includes a dielectric substrate; an electrode layer continuously formed covering a first side of the dielectric substrate; a disk-shaped electrode pattern provided on a second side of the dielectric substrate, the disk-shaped electrode pattern and the electrode layer holding the dielectric substrate therebetween; a ground slot having an opening that is formed asymmetrically with respect to the center of a circular area included in the electrode layer and exposes the dielectric substrate, the circular area and the disk-shaped electrode pattern holding the dielectric substrate therebetween.

Superconducting filter with disk-shaped electrode pattern

Growing community of inventors

Kawasaki, Japan

Kazuaki Kurihara