Sharp Kabushiki Kaisha Corporation

Kazuaki Kaneko

Makoto Matsuda

Hiroaki Onuma

Shigetoshi Ito

Kazuaki Sasaki

Junichi Nakamura

Hiroshi Umeda

Kiyoto Gotoh

Teruyuki Oomatsu

A semiconductor light-emitting deviceincludes a heat sink and a semiconductor light-emitting element mounted on the heat sink. A gap is provided between a region of a part of a base bottom surface of a base of the semiconductor light-emitting element and an upper surface of the heat sink, and a lead is disposed in a region where the gap is provided so as to vertically pass through the base. A semiconductor laser chip is provided in a region where the gap is not provided so that its waveguide longitudinal direction is substantially parallel to an upper surface of the base. The lead has its lower end located within the gap and connected to a flexible substrate.

Semiconductor light-emitting device

A light emitting apparatus that includes at least one kind of light emitting elements of which the number is one or more, and a phosphor that is excited by output light of the light emitting element. In a case where all light emitting elements mounted before the phosphor is mounted in the light emitting apparatus emit light, the light emitting apparatus has a peak wavelength of output light in a first wavelength region of 440 nm or longer and shorter than 460 nm, and has a peak wavelength of output light in a second wavelength region of 460 nm to 490 nm.

Light emitting apparatus with two primary lighting peaks

Provided is a light-emitting device that is able to adjust a color temperature by power supplied from a single power source. The light-emitting device includes an anode electrode land, a cathode electrode land, and three or more wires that are provided in parallel and are connected to the anode electrode land and the cathode electrode land, in which at least three wires among the three or more wires have different forward current-forward voltage characteristics and are connected to different light emitting portions, and the color temperature of light emitted from the whole of the light-emitting portions is able to be adjusted.

Light-emitting device

The light emitting device includes at least one light emitting element that emits light having a peak emission wavelength in a wavelength range from 380 nm to 480 nm inclusive; a first green phosphor that is excited by the primary light emitted by the light emitting element and emits light having the peak emission wavelength in the green region; a second green phosphor that is excited by the primary light and emits light having the peak emission wavelength in the green region; and a red phosphor that is excited by the primary light and emits light having the peak emission wavelength in the red region. The peak emission wavelength of the light emitted by the second green phosphor is shorter than the peak emission wavelength of the light emitted by the first green phosphor.

Light emitting device having high color rendering using three phosphor types

A semiconductor light-emitting device includes: a semiconductor substrate; a light-emitting layer formed on the semiconductor substrate; a current-blocking layer formed on a part of the light-emitting layer for restricting light-emission; a current-spreading layer formed on the current-blocking layer and the other part of the light-emitting layer; a front electrode formed on the current-spreading layer; and a rear electrode formed on a rear side of the semiconductor substrate. The current-blocking layer is composed of a central region and an outer region which surrounds the central region via a part of the current-spreading layer, so that a light-emitting region that appears on a front surface of the device has an annular shape. The front electrode and the central region of the current-blocking layer are opposed to each other.

Semiconductor light-emitting device having annular shape light emitting region and current blocking layer

Light emitting diode (LED) device has a P-type GaAlAs cladding layer, a P-type GaAlAs active layer, an N-type GaAlAs cladding layer and a circular electrode formed in sequence on a P-type GaAs substrate and mesa etched. An area of a PN contact surface between the P-type active layer and the N-type cladding layer is between 0.053 mmand 0.058 mmwhich allows qualification criteria of the LED device for communications to be easily satisfied.

Growing community of inventors

Sakai, Japan

Kazuaki Kaneko