Fujitsu Corporation

Kazuaki Ishii

Naoki Yokoyama

Toshiro Futatsugi

Toshio Fujii

Toshio Oshima

Akihiro Shibatomi

An electrode structure of an electrode of a refractory metal or a silicide thereof on a layer of In.sub.x Ga.sub.1-x As (0&lt;x&lt;1) on a substrate of a III-V compound semiconductor is ohmic and is stable even at a high temperature, for example, 900.degree. C. This high temperature stable ohmic electrode structure allows ion implantation into the substrate with the electrode as a mask followed by annealing to form a doped region in alignment with the edge of the electrode.

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Atsugi, Japan

Kazuaki Ishii