Other

Kabushiki Kaisha Toshiba

Alps Electric Co., Ltd.

Tohoku University

Research Development Corporation of Japan

Kazuaki Fukamichi and Ykk Corporation

Kazuaki Fukamichi

Yutaka Shimada

Osamu Kitakami

Naoya Hasegawa

Masashi Sahashi

Akihiro Makino

Akiko Saito

Tadahiko Kobayashi

Hideki Takeda

Noriyuki Kataoka

Asaya Fujita

Yoshiaki Iijima

Valentyn Novosad

Yoshichika Otani

Hiroko Uyama

Kim Jek Jun

The magnetic material for magnetic refrigeration according to the present invention has an NaZn-type crystalline structure and comprises iron (Fe) as a principal element (more specifically, Fe is substituted for the position of 'Zn') and hydrogen (H) in an amount of 2 to 18 atomic % based on all constitutional elements. Preferably, the magnetic material for magnetic refrigeration preferably contains 61 to 87 atomic % of Fe, 4 to 18 atomic % of a total amount of Si and Al, 5 to 7 atomic % of La. The magnetic material for magnetic refrigeration exhibits a large entropy change in a room temperature region and no thermal hysteresis in a magnetic phase transition. Therefore, when a magnetic refrigeration cycle is configured using the magnetic material for magnetic refrigeration, a stable operation can be performed.

Magnetic material for magnetic refrigeration and method for producing thereof

A lattice shaped underlayer made of a ferroelectric material having a piezoelectric effect is formed on a substrate. On the crossing points of the underlayer magnetic films with a magnetoelastic effect are formed. By applying a voltage to the given column and row of the underlayer, the underlayer is stressed at the crossing point. Then the stress is transmitted to the magnetic film on the same crossing point making the magnetization reverse through the magnetoelastic effect, thus, carrying out writing to the MRAM.

Writing method for a magnetic immovable memory and a magnetic immovable memory

The present invention aims to provide an excellent exchange coupling thin film consisting of a completely novel material other than FeMn or NiMn and having excellent corrosion resistance and high resistivity, and a magnetoresistive element and a magnetic head each of which include the exchange coupling thin film. The exchange coupling thin film includes an antiferromagnetic film mainly composed of a crystal phase of a body-centered cubic structure and containing Cr and element M where element M contains at least one element of the 3B group elements in the Periodic Table, or Al, Ga or In, and a ferromagnetic film containing at least one of Fe, Ne, and Co, both films being laminated in contact with each other, wherein magnetic exchange coupling is generated in the interface between the antiferromagnetic film and the ferromagnetic film.

Exchange coupling thin film and magnetoresistive element comprising the

A bulk magnetoresistance effect material of a composition represented by the general formula: T.sub.100-A M.sub.A (wherein T is at least one element selected between Cu and Au; M is at least one element selected from the group consisting of Co, Fe, and Ni; and A is in the range: 1.ltoreq.A.ltoreq.50 by atomic percent) is prepared by casting a molten mixture of the above composition, and subjecting the resulting casting to homogenization and further to heat treatment. The bulk magnetoresistance effect material is high in the rate of change in the electrical resistance thereof, i.e., shows a large magnetoresistive effect and can be obtained in such bulk form in arbitrary shapes adaptable for various uses. Using the material, various types of magnetoresistive elements are obtained.

Magnetoresistance effect material, process for producing the same, and

As magnetically working substances capable of producing magnetically working abilities such as magnetic refrigeration or cooling in a wide range of temperatures with high efficiency, this invention utilizes amorphous alloys possessing a large magnetic moment and the spin glass property. Concrete examples of the amorphous alloys which meet the requirement are amorphous alloys containing rare earth metals, the same amorphous alloys absorbed hydrogen therein, and Fe-based amorphous alloys containing additional elements for formation of the amorphous phase. One element or the combination of two or more elements selected from the group just mentioned can be used, with the composition of alloys so adjusted for the desired magnetic transition points to be distributed or for the different magnetic transition points to be continuously distributed in a range of high to low temperatures. The magnetically working substances so produced are enabled to create magnetically working abilities by exposing to an external weak or strong magnetic field and subsequently adiabatical demagnetizing. It finds utilities in applications to very big plants such as MHD power generation, nuclear fusion, and energy storage and to various devices such as linear motors, electronic computers and their peripheral appliances.

Magnetical working amorphous substance

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Sendai, Japan

Kazuaki Fukamichi