Idemitsu Kosan Company, Limited

Idemitsu Kosam Co., Ltd.

Kazuaki Ebata

Shigekazu Tomai

Shigeo Matsuzaki

Koki Yano

Yuki Tsuruma

Kazuyoshi Inoue

Nozomi Tajima

Makoto Ando

Futoshi Utsuno

Kota Terai

Masayuki Itose

Mami Nishimura

A sputtering target including an oxide that includes an indium element (In), a tin element (Sn), a zinc element (Zn) and an aluminum element (Al), and including a homologous structure compound represented by InAlO(ZnO)(m is 0.1 to 10), wherein the atomic ratio of the indium element, the tin element, the zinc element and the aluminum element satisfies specific requirements.

Sputtering target, oxide semiconductor thin film, and method for producing oxide semiconductor thin film

A sputtering target including an oxide that includes an indium (In) element, a tin (Sn) element, a zinc (Zn) element and an aluminum (Al) element, wherein the oxide includes a homologous structure compound represented by InAlO(ZnO)(m is 0.1 to 10) and a bixbyite structure compound represented by InO.

Sputtering target, oxide semiconductor thin film, and method for producing these

A crystalline oxide semiconductor thin film that is composed mainly of indium oxide and comprises surface crystal grains having a single crystal orientation.

Crystalline oxide semiconductor thin film, method for producing crystalline oxide semiconductor thin film, and thin film transistor

A sputtering target including a sintered body:

Sputtering target

A sintered body which includes at least indium oxide and gallium oxide and comprises voids each having a volume of 14000 &#x3bc;mor more in an amount of 0.03 vol % or less.

Sintered material, and process for producing same

A thin film transistor () includes a source electrode (), a drain electrode (), a gate electrode (), a gate insulating film (), and a channel layer () that is formed of an oxide semiconductor, the channel layer () having an average carrier concentration of 1&#xd7;10/cmto 5&#xd7;10/cm, and including a high carrier concentration region () that is situated on the side of the gate insulating film () and has a carrier concentration higher than the average carrier concentration, and the channel layer () having a substantially homogenous composition.

Thin-film transistor

An oxide sintered body including an oxide of indium and aluminum and having an atomic ratio Al/(Al+In) of 0.01 to 0.08.

Sintered oxide body, target comprising the same, and oxide semiconductor thin film

A sputtering target including a sintered body including In, Ga and Mg,

A stacked layer structure including an oxide layer and an insulating layer, the oxide layer having a carrier concentration of 10/cmor less and an average crystal diameter of 1 &#x3bc;m or more; and the crystals of the oxide layer being arranged in a columnar shape on the surface of the insulating layer.

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Sodegaura, Japan

Kazuaki Ebata