U.S. Philips Corporation

Kazimierz Osinki

Henricus G Maas

Jan W Slotboom

Geert J Davids

A charge-coupled semiconductor device has a plurality of silicon electrodes for storing and transporting information-carrying charge, which electrodes are located on an insulating layer and are mutually separated by grooves having a width of at most 1 .mu.m. According to the invention, transfer electrodes are arranged in the grooves, these electrodes being coplanar with the remaining electrodes. The thickness of the insulating layer under the transfer electrodes is substantially equal to that under the storage electrodes. The invention also relates to a method of manufacturing a semiconductor device having such an electrode system.

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Eindhoven, Netherlands

Kazimierz Osinki