Semiconductor Energy Laboratory Co., Ltd.

Kayo Kumakura

Satoru Idojiri

Hiroki Adachi

Seiji Yasumoto

Kohei Yokoyama

Masakatsu Ohno

Yoshiharu Hirakata

Akihiro Chida

Junpei Yanaka

Masataka Sato

Hisao Ikeda

Shingo Eguchi

Yasuhiro Jinbo

Tomoya Aoyama

Tatsuya Sakuishi

Hiroyuki Watanabe

Yutaka Uchida

Saki Eguchi

Kenichi Okazaki

Kensuke Yoshizumi

Koichi Takeshima

Natsuko Takase

Mari Tateishi

Yuka Sato

Shunpei Yamazaki

A high-yield fabricating method of a semiconductor device including a peeling step is provided. A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin. In the step of separating, the first material layer and the second material layer are separated from each other by irradiation of an interface between the first material layer and the second material layer or the vicinity of the interface with light.

Semiconductor device comprising adhesive layer and resin layer

The yield of a separation process is improved. The mass productivity of a display device which is formed through a separation process is improved. A layer is formed over a substrate with use of a material including a resin or a resin precursor. Next, a resin layer is formed by performing heat treatment on the layer. Next, a layer to be separated is formed over the resin layer. Then, the layer to be separated and the substrate are separated from each other. The heat treatment is performed in an atmosphere containing oxygen or while supplying a gas containing oxygen.

Separation method, display device, display module, and electronic device

A method of fabricating a semiconductor device, which includes a separation step and has a high yield, is provided. A metal layer is formed over a substrate, fluorine is supplied to the metal layer, and the metal layer is then oxidized, whereby a metal compound layer is formed. A functional layer is formed over the metal compound layer, heat treatment is performed on the metal compound layer, and the functional layer is separated from the substrate with use of the metal compound layer. By performing first plasma treatment using a gas containing fluorine, fluorine can be supplied to the metal layer. By performing second plasma treatment using a gas containing oxygen, the metal layer supplied with fluorine can be oxidized.

Fabrication method of semiconductor device

Fabrication method of semiconductor device and semiconductor device

The yield of a manufacturing process of a semiconductor device is increased. The mass productivity of a semiconductor device is increased. A semiconductor device is manufactured by forming a first material layer over a substrate; forming a second material layer over the first material layer; and separating the first material layer and the second material layer from each other; and heating the first material layer and the second material layer that are stacked before the separation. The first material layer includes a gas containing hydrogen, oxygen, or hydrogen and oxygen (e.g., water) in a metal oxide, for example. The second material layer includes a resin. The first material layer and the second material layer are separated from each other by a break of a hydrogen bond. Specifically water is separated out at the interface or near the interface, and then adhesion is reduced due to the water present.

Manufacturing method of semiconductor device

To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.

Peeling method, display device, module, and electronic device

A processing apparatus of a stack is provided. The stack includes two substrates attached to each other with a gap provided between their end portions. The processing apparatus includes a fixing mechanism that fixes part of the stack, a plurality of adsorption jigs that fix an outer peripheral edge of one of the substrates of the stack, and a wedge-shaped jig that is inserted into a corner of the stack. The plurality of adsorption jigs include a mechanism that allows the adsorption jigs to move separately in a vertical direction and a horizontal direction. The processing apparatus further includes a sensor sensing a position of the gap between the end portion in the stack. A tip of the wedge-shaped jig moves along a chamfer formed on an end surface of the stack. The wedge-shaped jig is inserted into the gap between the end portions in the stack.

Processing apparatus and processing method of stack

An object is to eliminate a harmful effect when a film is bonded by wiping an adhering sealant (). Characterized is a wiping device () including a stage () that supports a sheet-like member (), a wiping means () that wipes an adhering object () adhering on a peripheral portion of the sheet-like member (), a wiping cloth () that is attachably and detachably provided for the wiping means (), and a solvent () that adheres to the wiping cloth (), in which the wiping means () is provided with the wiping cloth (), makes the solvent () adhere to the wiping cloth (), and wipes the adhering object (), or a stack manufacturing apparatus () including such a wiping device ().

Wiping device and stack manufacturing apparatus

A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/&#xb0; C., or preferably less than or equal to 30 ppm/&#xb0; C.

Peeling method using separating peeling layer and layer to be peeled

Provided is a flexible device with fewer defects caused by a crack or a flexible device having high productivity. A semiconductor device including: a display portion over a flexible substrate, including a transistor and a display element; a semiconductor layer surrounding the display portion; and an insulating layer over the transistor and the semiconductor layer. When seen in a direction perpendicular to a surface of the flexible substrate, an end portion of the substrate is substantially aligned with an end portion of the semiconductor layer, and an end portion of the insulating layer is positioned over the semiconductor layer.

Semiconductor device having a flexible substrate and a crack-preventing semiconductor layer

Light-emitting device with flexible substrates

A film-like member is supported in a flat shape by vacuum suction. A plurality of lift pins are arranged in a planar configuration and bear a film-like member placed on their upper ends. Tubular pads made of rubber for holding the film-like member by vacuum suction are attached to upper portions of the lift pins. The height of the lift pins can be adjusted by a screw fastening mechanism. The deformation of the film-like member can be corrected to a flat or concavely curved shape by suction from the pads. When the correction cannot be achieved by suction alone, the correction may be supplemented by ejection of air from a nozzle.

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Tochigi, Japan

Kayo Kumakura