Novaled Gmbh

Infineon Technologies Ag

Plastic Logic Limited

Leibniz-institut Fur Polymerforschung Dresden E.v.

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Kay Lederer

Steffen Runge

Felix Limberg

Volodymyr Senkovskyy

Jan Blochwitz-Nimoth

Jerome Ganier

Mike Zoellner

Brigitte Isabell Voit

Mike Zöllner

Steffen Hornig

Hartmut Krüger

Maria Grazia La Placa

Jorge Avila

Pablo B Boix

Hendrik Bolink

Hartmut Krueger

Anton Kiriy

Alfredo Calvimontes

Anke Limbach

Michele Sessolo

Anke Teichler

Maria Cristina Momblona Rincon

Lidon Gil Escrig

Jan Hendrik Bolink

Isabelle Brigitte Voit

The present invention is related to a solar cell comprising a first electrode; a second electrode; and a stack of layers provided between the first electrode and the second electrode; wherein the stack of layers comprises one light absorbing layer provided with a perovskite crystal structure; and at least one dopant layer, wherein the dopant layer consists of one or more n-dopant material(s); or one or more p-dopant material(s).

Solar cell

The present invention is directed to an ink composition for forming an organic semiconductor layer, wherein the ink composition comprises: &#x2014;at least one p-type dopant comprising electron withdrawing groups; &#x2014;at least one first auxiliary compound, wherein the first auxiliary compound is an aromatic nitrile compound, wherein the aromatic nitrile compound has about &#x2265;1 to about &#x2264;3 nitrile groups and a melting point of about &#x3c;100&#xb0; C., wherein the first auxiliary compound is different from the p-type dopant; and wherein the electron withdrawing groups are fluorine, chlorine, bromine and/or nitrile.

Ink composition for forming an organic layer of a semiconductor

The present invention relates to a charge transporting semi-conducting material comprising: a) optionally at least one electrical dopant, and b) at least one cross-linked charge-transporting polymer comprising 1,2,3-triazole cross-linking units, a method for its preparation and a semiconducting device comprising the charge transporting semi-conducting material.

Charge transporting semi-conducting material and semi-conducting device

The present invention relates to a charge transporting semi-conducting material comprising: a) at least one electrical dopant, and b) a branched or cross-linked charge-transporting polymer comprising cyclobutenone cross-linking units of at least one of the general formulae la and/or lb, wherein aa) Pol, Pol, Poland Polare independently selected chains of the charge-transporting polymer, bb) X, X, X, and Xare independently selected optional spacer units or, independently, represent direct bonding of Pol, Pol, Poland Polchains to the cyclobutenone ring, cc) Z, Z, Z, and Zare independently selected from H, halogen or a carbon-containing group; the charge transporting semi-conducting material being obtainable by a process comprising: i) providing a solution containing aaa) at least one precursor charge transporting compound comprising at least one covalently attacked alkenyloxy group having generic formula II wherein X is an optional spacer which is further linked to a charge transporting structural moiety of the precursor charge transporting compound, the dashed line represents the bonding to a charge transporting structural moiety of the precursor charge transporting compound and Z, Z, Z, and Zare independently selected from H, halogen or the carbon-containing group, bbb) at least one electrical dopant, ccc) at least one solvent, ii) depositing the solution on a substrate, iii) removing the solvent, and iv) reacting the alkinyloxy groups to effect crosslinking, preferably by heating, wherein the average number of the alkinyloxy groups per one molecule of the precursor charge transporting compound provided in the step i) is equal to or greater than 2, preferably greater than 2.05, and a process for preparing the same.

Charge transporting semi-conducting material and electronic device comprising it

The present invention relates to a charge transporting semi-conducting material. The charge transporting semi-conducting material may include The charge transporting polymer can include ethylene building units substituted with at least one pending side group including a conjugated system of delocalized electrons. Also provided herein are processes for obtaining the charge transporting semi-conducting material.

The invention relates to the field of measurement technology and concerns a method and an apparatus, such as may be used, by way of example, in thin-layer technology for organic dielectric semi-conducting or conducting layers on substrates. The object of the invention is to indicate a method and an apparatus with which both the surface topography of the coating and that of the surface may be determined independently of one another, at the same position. The object is achieved by a method wherein the three-dimensional topography of the coating is determined using chromatic white light measurement and, subsequently, the thickness of the coating is determined using UV interferometry, and the surface topography of the coated surface is determined by a comparison with the overall dimensions of the coated surface. The object is further achieved by an apparatus wherein an apparatus for chromatic white light measurement and an apparatus for UV interferometry are disposed on a test bench.

Method and apparatus for determining the surface topography of coated reflective surfaces

In a negative or positive photoresist layer structured with the aid of the customary lithography technique, the photoresist layer is heated briefly, in the region of the interface with the semiconductor substrate, to a temperature above the melting point to fuse the photoresist layer at the interface with the layer underneath on the semiconductor wafer.

Process for structuring a photoresist layer on a semiconductor substrate

In a process facility for producing semiconductor wafers, a third physical unit is configured between two physical units that produce mini environments. The third physical unit has a laminar flow at right angles to the laminar flows of the two physical units and is operated with a slightly higher flow velocity. According to the Bernoulli equation, the static pressure in the third physical unit is therefore lower than in the surrounding two physical units. Advantageously, therefore, no contamination from the more highly loaded one of the two physical units passes over into the lesser loaded one of the two physical units.

Process facility having at least two physical units each having a reduced density of contaminating particles with respect to the surroundings

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Dresden, Germany

Kay Lederer