Taiwan Semiconductor Manufacturing Comp. Ltd.

Kaw-Wei Kuo

Yi-Wei Chiu

Kuo-Feng Huang

Chun-Hao Kung

Yen-Chang Chao

Wei-Chun Chen

Po-Chun Huang

A cleaning apparatus and a method of using the cleaning apparatus are provided. The method includes first moving a pencil pad into contact with a top surface of a wafer, wherein the pencil pad is connected to a pivot arm and second moving the pivot arm in a sweeping motion from a first zone to a second zone, the first zone being closer to a center of the top surface of the wafer than the second zone, wherein the sweeping motion is controlled by a controller, the pivot arm moves at a first speed in the first zone and the pivot arm moves at a second speed in the second zone, wherein the first speed is different from the second speed.

CMP cleaning system and method

In accordance with some embodiments, an abrasive article is provided. The abrasive article includes a carrier. The abrasive article further includes a matrix layer on the carrier. The matrix layer includes a copper-titanium-tin alloy, wherein the copper-titanium-tin alloy includes from about 70 wt % to about 90 wt % of copper, from about 5 wt % to about 15 wt % of titanium, and from about 5 wt % to about 15 wt % of tin. The abrasive article also includes at least one abrasive particle partially embedded in the matrix layer. The abrasive particle includes carbon.

Abrasive article, conditioning disk and method for forming abrasive article

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Tainan, Taiwan

Kaw-Wei Kuo