Globalfoundries Inc.

Kaveri Mathur

James F Buller

Akif Sultan

Andreas Kurz

Ciby Thuruthiyil

Sriraaman Sridharan

An approach for methodology enabling a verification of IC designs that compensates for degraded performance due to a physical placement, particularly a stacked physical placement is disclosed. A set of stacked devices from a plurality of devices in an IC design is determined. One or more instance parameters indicating a physical placement of a device in the set is determined. A compensation metric indicating one or more electrical characteristics of a device in the set is determined based on the one or more instance parameters.

Method for selectively modeling narrow-width stacked device performance

Semiconductor devices are formed with reduced variability between close proximity resistors, improved end resistances, and reduced random dopant mismatch. Embodiments include ion implanting a dopant, such as B, at a relatively high dosage, e.g. about 4 to about 6 keV, and at a relatively low implant energy, e.g., about 1.5 to about 2E15/cm.

Semiconductor devices with improved local matching and end resistance of RX based resistors

A semiconductor device is provided which includes a substrate including an inactive region and an active region, a gate electrode structure having portions overlying the active region, a compressive layer overlying the active region, and a tensile layer overlying the inactive region and located outside the active region. The active region has a lateral edge which defines a width of the active region, and a transverse edge which defines a length of the active region. The gate electrode structure includes: a common portion spaced apart from the active region; a plurality of gate electrode finger portions integral with the common portion, and a plurality of fillet portions integral with the common portion and the gate electrode finger portions. A portion of each gate electrode finger portion overlies the active region. The fillet portions are disposed between the common portion and the gate electrode finger portions, and do not overlie the active region. The compressive layer also overlies the gate electrode finger portions, and the tensile layer is disposed adjacent the transverse edge of the active region.

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Austin, TX, United States of America

Kaveri Mathur