Fujitsu Corporation

Katuyuki Yamada

Kazuhiro Toyoda

Yasuhisa Sugo

A semiconductor memory device in which a holding current continuously flows from word selection lines through memory cells to hold lines. Current mirror circuits are placed at the base of each of the transistors which switch discharge currents on and off in the word line discharge circuits. Thus, the discharge circuit is independent of the effects of the operation of other discharge circuits and the word line discharge circuit is less affected by power source fluctuations. This allows a semiconductor memory device having a high access speed.

Semiconductor memory device

A semiconductor memory includes memory cells each respectively provided with a flip-flop circuit in which a pair of transistors is included, the flip-flop circuit being connected to a pair of bit lines and to a pair of word lines. The semiconductor memory further includes a pair of switching transistors connected to the pair of bit lines. One of the pair of switching transistors is turned ON while the other is turned OFF when they receive high and low potentials according to write data at the time of a write operation so as to flow write current from a memory cell to a voltage source via one of the pair of bit lines and one of the pair of switching transistors.

Semiconductor memory

A semiconductor memory device comprising a circuit which effects the flow of a discharge current to a selected word line, wherein a circuit for detecting change of a decoder input is provided, and thereby the discharge current flows temporarily only when the selected word line shifts to the non-selected condition.

Growing community of inventors

Kawasaki, Japan

Katuyuki Yamada