Nec Corporation

Nippon Electric Co., Ltd.

Asahi Kasei Chemicals Corporation

Katumi Suzuki

Shigeru Sasaki

Takahiro Hisasue

Nobuhiro Endo

Yasuo Iida

An object of the present invention is to provide a hydrogenated block copolymer having excellent flexibility, heat resistance, abrasion resistance and surface texture (no stickiness, oil bleeding etc.) and good processability, and a composition thereof. The present invention provides a hydrogenated block copolymer that has therein at least one of each of a vinyl aromatic compound polymer block A, a hydrogenated polymer block B of a random copolymer comprising a conjugated diene and a vinyl aromatic compound, and a hydrogenated polymer block C of a conjugated diene polymer having a vinyl bond content of not less than 30%, the hydrogenated block copolymer having a vinyl aromatic compound content of more than 50 wt % and less than 95 wt %, and a composition containing the hydrogenated block copolymer.

Hydrogenated block copolymer and composition thereof

A semiconductor device includes a Si substrate, a compound semiconductor layer selectively formed on one main surface of the Si substrate, a hole formed in the Si substrate to expose a portion of a back surface of the compound semiconductor layer, a microwave monolithic integrated circuit formed on a portion of an upper surface of the compound semiconductor layer just above the exposed portion of the back surface, and a metal layer covering the back surface of the Si substrate, the side walls of the hole and the exposed portion of the back surface of the compound semiconductor layer. A Si device may be formed on the portion of the upper surface of the Si substrate where the compound semiconductor layer is not formed. GaAs may be used for the compound semiconductor layer and the metal layer is connected to the ground line.

Semiconductor device having an integrated circuit formed on a compound

A registration mark to be used for a micro-fine working technique such as LSI's includes a smaller protrusion pattern within a larger recess pattern formed in a surface of the semiconductor substrate. The recess and protrusion patterns are used for coarse and fine positioning, respectively. The protrusion pattern implements precise positioning because it is isolated from other regions.

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Tokyo, Japan

Katumi Suzuki