Tokyo Shibaura Denki Kabushiki Kaisha

Katuhiko Morimune

Nobuo Suzuki

Masaharu Watanabe

Hirokazu Sekine

A charge storage type semiconductor device comprising a semiconductor substrate and means for accumulating charge in those portions of the substrate which are located in the vicinity of one of the major surfaces of the substrate. The substrate has a defect region of a high defect density and at least one defect free region having no crystal defects or a low defect density and formed in the vicinity of at least the major surface of the substrate. The defect region prevents unnecessary minority carriers from flowing into charge storage regions.

Growing community of inventors

Yokohama, Japan

Katuhiko Morimune