Fuji Electric Co., Ltd.

Fuji Electric Device Technology Co., Ltd.

Fuji Electric Systems Co. Ltd.

Katsuyuki Uematsu

Mutsuo Nishikawa

Katsumichi Ueyanagi

Kazuhiro Matsunami

Kimihiro Ashino

Kazunori Saito

Shigeru Shinoda

Akio Kitamura

Yuko Fujimoto

Keiichi Ito

In aspects of the invention, a sensor unit is stored in a recessed sensor mount portion formed in a resin case. The sensor unit can be formed so that a semiconductor pressure sensor chip is joined to one side of a glass pedestal, and the other side of the glass pedestal is die-bonded to the bottom of the sensor mount portion through an adhesive. An electrode pad on the semiconductor pressure sensor chip is electrically connected through a bonding wire to a lead terminal for leading externally that pierces through the resin case and is integrally insert-molded therein. An entire surface of the sensor unit, an exposed part of the lead terminal internally-located in the resin case, the bonding wire, and an exposed part of an inner wall of the resin case can be coated with the protective film composed of a poly(p-xylylene)-family polymer including fluorine.

Pressure sensor device including-fluorinated gel protective member disposed on a protective film

An analog signal is supplied to a first conversion section of a physical quantity sensor device, converted to digital, and set to be an initial output value of the first conversion section. Adjustment information for the first conversion section is calculated based on the error between the initial output value and a target output value of the first conversion section. Before an initial output value of a physical quantity sensor is measured for calculating initial setting information of a physical quantity sensor device, the first conversion section is adjusted based on the adjustment information. Also, a digital signal is supplied to a second conversion section of the physical quantity sensor device, converted to analog, and set to be an initial output value of the second conversion section. The second conversion section is adjusted based on adjustment information for the second conversion section.

Physical quantity sensor device and method of adjusting physical quantity sensor device

A first acquiring unit acquires initial output values of a physical quantity sensor. A second acquiring unit acquires target output values for the physical quantity sensor. A first calculating unit extracts first characteristic values by calculating a second-order first characteristics formula which indicates corrected output characteristics of the physical quantity sensor, based on the initial output values and target output values of the physical quantity sensor. The second calculating unit extracts second characteristic values by calculating a second-order second characteristics formula for correcting the first characteristic values, based on a predetermined temperature and the first characteristic values. A computing unit computes a corrected output value for the physical quantity sensor based on the first characteristics formula which is corrected by inputting the second characteristic values to the second characteristics formula.

Output value correction method for physical quantity sensor apparatus, output correction method for physical quantity sensor, physical quantity sensor apparatus and output value correction apparatus for physical quantity sensor

Aspects of a semiconductor pressure sensor device can include a semiconductor substrate having a depressed portion which forms a vacuum reference chamber, a diaphragm disposed on the front surface of the semiconductor substrate, and strain gauge resistors. The device can further include an aluminum wiring layer disposed on the semiconductor substrate, an antireflection film which is a TiN film disposed on the aluminum wiring layer, an adhesion securing and diffusion preventing layer which is a film stack of a Cr film and Pt film disposed on the TiN film, and an Au film stacked on the adhesion securing and diffusion preventing layer.

Semiconductor pressure sensor device and method of manufacturing the same

This invention provides a low-current consumption type signal amplification circuit, which limits the output voltage to fix a lower-limit (upper-limit) saturation voltage of the amplification circuit at a predetermined lower-limit (upper-limit) limiting voltage. The signal amplification circuit comprises a negative feedback amplification circuit, a lower-limit voltage limiting circuit and an upper-limit voltage limiting circuit. The lower-limit voltage limiting circuit increases a resistance between an output terminal of the negative feedback amplification circuit and a ground terminal when the output voltage of the negative feedback amplification circuit falls below the lower-limit limiting voltage. The upper-limit voltage limiting circuit increases a resistance between the output terminal of the negative feedback amplification circuit and a high-potential side of a power supply when the output voltage of the negative feedback amplification circuit rises above the upper-limit limiting voltage.

Signal amplification circuit

A lead frame which is disposed in an outer package is composed of three members. The lead frame is provided with contact electrodes, connector terminals, and conductive interconnections which are connected to the respective connector terminals. The arrangement order of the contact electrodes is such that contact electrodes are connected to the connector terminals, respectively; that is, the arrangement direction of the contact electrodes is the same as that of the connector terminals. On the other hand, the arrangement order of the contact electrodes is such that contact electrodes are connected to the connector terminals, respectively, that is, the arrangement direction of the contact electrodes is opposite to that of the connector terminals. Lead terminals of a resin cell package are connected to the contact electrodes.

Semiconductor device and method of manufacturing same

A signal amplifier circuit includes a negative feedback amplifier circuit having an output terminal, a first voltage limiting device for limiting the output voltage from the negative feedback amplifier circuit, a second voltage limiting device for limiting the output voltage from the negative feedback amplifier circuit, a first reference voltage supply applying a first reference voltage to the first voltage limiting device, a second reference voltage supply applying a second reference voltage to the second voltage limiting device. The first voltage limiting device is configured to fix a lower limit saturation voltage at the first reference voltage. The second voltage limiting device is configured to fix an upper limit saturation voltage at the second reference voltage.

Signal amplifier circuit with a limiting voltage device

An over-voltage protection circuit for protecting an integrated circuit includes an external power supply terminal to which a power supply voltage is supplied, a grounding terminal to which a ground voltage is supplied, and an internal power supply terminal for supplying the power supply voltage to the integrated circuit. A voltage dividing unit is connected between the external power supply terminal and the grounding terminal for dividing a voltage supplied from the external power supply terminal, and has a Zener diode and a first resistor connected in series. A signal generating unit is connected between the external power supply terminal and the grounding terminal for outputting the power supply voltage or the ground voltage, and a switching unit is connected between the internal power supply terminal and the signal generating unit for performing a switching operation.

Over-voltage protection circuit

A semiconductor device includes a polysilicon resistor that can suppress variations in resistance value in environments with an ambient temperature higher than room temperature. The resistance value Rof a polysilicon contact is reduced to 2% or less of the sum of the resistance value Rof the polysilicon contact and the resistance value Rof a polysilicon resistor. Hence, a semiconductor device that is not significantly affected by a variation in the resistance of the polysilicon contact is realized. This device suppresses variations in resistance value in environments with an ambient temperature higher than room temperature.

Polysilicon resistor semiconductor device

A broken-wire-failure detection circuit connected to a higher circuit includes a power line, a signal line, a ground line, and at least one of the first resistance device connected between the power line and the signal line and the second resistance device connected between the signal line and the ground line. The broken-wire-failure detection circuit also includes the third resistance device connected between the power line and the ground line, and a signal output circuit connected to the second power line, the second signal line and the second ground line.

Open-circuit failure detection circuit

An inexpensive, accurate, and reliable semiconductor physical quantity sensor having improved resistance to noise is provided, wherein pads that have been pulled down to ground inside a semiconductor chip are arranged closer to a ground pad, while pads and that have been pulled up to a power supply inside the chip are arranged closer to a power supply pad. Of the digital input/output pads that have undergone digital trimming to obtain a predetermined output, the pulled-down pads and the ground pad are electrically connected to a ground terminal outside the chip via internal exposed portions, wires, and a ground-connecting external wire. The pulled-up pads and the power supply pad are electrically connected to a power supply terminal outside the chip via the internal exposed portions, the wires, and a power-supply-connecting external wire. Terminals may be electrically connected together on a package or a mounting substrate.

Semiconductor physical quantity sensor with improved noise resistance

To improve the capability to withstand noises and surges in a semiconductor integrated circuit in which an RC filter for cutting electromagnetic wave noises is integrated with analog circuits and digital circuits, a positive electrode of a capacitor constituting the RC filter is disposed apart from circuit elements or connection lines constituting the circuits at such an interval as to prevent malfunction of the circuit elements resulting from a noise superimposed on the positive electrode, or dielectric breakdown of the capacitor constituting the RC filter and latch-up and dielectric breakdown of the circuit elements resulting from a surge applied to the positive electrode. The interval is larger than the minimum interval required by a layout rule or five times longer than the minimum.

Layout of semiconductor integrated circuit

A CMOS device with an integral reverse connection protection circuit having a low impedance region, whose impedance becomes lowest when a Vcc pad to which is to be supplied power supply voltage and a GND pad to which is to be supplied ground potential are connected in reverse polarity. The low impedance region, Vcc pad and GND pad are electrically connected through a metal line and a metal line, and current is diverted into the low impedance region during the reverse connection so as to protect an internal circuit. Surge protection elements with identical characteristics are disposed in proximity to three sides or four sides of a pad, and each side of the pad and the surge protection element corresponding thereto are electrically connected to each other, so that surge current applied to the pad is dispersed to the plurality of surge protection elements to protect the internal circuit.

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Hata-machi, Japan

Katsuyuki Uematsu