Shin-etsu Chemical Co., Ltd.

Nippon Telegraph and Telephone Corporation

Katsuyuki Oikawa

Toshinobu Ishihara

Satoshi Watanabe

Yoshio Kawai

Akinobu Tanaka

Yoshihumi Takeda

Jiro Nakamura

Youichi Ohsawa

Tohru Kubota

Ichiro Kaneko

Fujio Yagihashi

Mikio Endo

Tadahito Matsuda

An anti-reflective coating composition comprising a polyimide dissolved in an organic solvent is used to form an anti-reflective coating beneath a chemical amplification type resist layer. The composition allows a fine resist pattern to be formed with high accuracy in a convenient, efficient, reproducible manner.

Anti-reflective coating composition

A chemically amplified positive resist composition contains a novel trifluoromethanesulfonic or p-toluenesulfonic acid sulfonium salt having at least one tert-butoxycarbonylmethoxy group as an acid labile group. The composition is highly sensitive to high energy radiation, especially KrF excimer laser and has high sensitivity, resolution and plasma etching resistance while the resulting resist pattern is heat resistant.

Chemically amplified positive resist composition

In a chemically amplified positive resist composition comprising an organic solvent, an alkali soluble resin, an acid generator, and an optional dissolution inhibitor, a salt of a pyridine which may have an alkyl, alkoxy, amino or dialkylamino group with an alkylsulfonic acid, arylsulfonic acid or halogen atom is blended. Because of high sensitivity to deep UV and resolution and elimination of the PED problem causing T-top pattern configuration and the skirting phenomenon, the resist composition is improved in dimensional precision and lends itself to fine patterning.

A chemically amplified, positive resist composition contains a trifluoromethanesulfonic or p-toluenesulfonic acid bis- or tris(p-tert-butoxyphenyl)sulfonium salt and a nitrogenous compound. The composition is highly sensitive to high energy radiation, especially KrF excimer laser and has high sensitivity, resolution and plasma etching resistance while the resulting resist pattern is heat resistant.

A water-soluble composition comprising a water-soluble N-vinylpyrrolidone copolymer and a fluorinated organic acid in a weight ratio of from 20:80 to 70:30 is useful in forming a water-soluble overlying film on a chemically amplified resist layer. The overlying film functions as both an anti-reflective film and a protective film during resist pattern formation by photolithography.

Water-soluble film forming composition

A composition comprising iodotrimethylsilane in admixture with a polysiloxane is shelf stable for a long time and effective in various organic synthetic reactions.

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Nakakubiki-gun, Japan

Katsuyuki Oikawa