Sony Corporation

Katsuyuki Hironaka

Takaaki Ami

Chiharu Isobe

Masataka Sugiyama

Yuji Ikeda

Koji Watanabe

Masayuki Suzuki

Yuichi Ishida

Hiroki Naito

Keiko Furukawa

Akio Machida

Kenji Katori

Christian Gutleben

Crystalline superfine particles capable of emitting light depending upon a time-rate-of-change of a stress and controlled in grain size in the range from 5 nm to 100 nm are complexed with another material such as resin. The crystalline superfine particles are manufactured by using aggregates of molecules, i.e. inverted micelles, which orient hydrophilic groups of surfactant molecules inward and hydrophobic groups outward in a nonpolar solvent and which contain metal ions of a metal for forming the crystalline superfine particles dissolved in water inside the inverted micelles. Alternatively, they are manufactured by using inverted micelles enveloping precursor superfine particles, in which precursor superfine particles are enveloped in water inside the inverted micelles. The crystalline superfine particles are excellent in dispersibility in another material to be complexed, enhanced in emission efficiency and usable to make a transparent stress emission material. The complex material obtained is used to manufacture artificial light-emitting hair structures, artificial light-emitting skin, artificial light-emitting bodies, artificial light-emitting fabrics, and others.

Crystalline superfine particles, complex material, method of manufacturing crystalline superfine particles, inverted micelles, inverted micelles enveloping precursor superfine particles, inverted micelles enveloping crystalline superfine particles, and precursor superfine particles

In a method for manufacturing a semiconductor storage device having a dielectric capacitor, an IrOfilm, an Ir film, an amorphous film, and a Pt film&#x2014;are sequentially made on an Si substrate. The SBT film may comprise Bi, Sr, Taand O, where the atomic ratio may be within the range of 0&#x2266;Sr/Ti&#x2266;1.0, 0&#x2266;Ba/Ti&#x2266;1.0. The Pt film, the amorphous film, the Ir film, and the IrOfilm formed into a dielectric capacitor and the amorphous film is twice annealed to change its amorphous phase to a fluorite phase and then to a crystal phase of a perovskite type crystalline structure and thereby obtain the SBT film. The process may include a lower electrode made from an organic metal source material selected from a group consisting of Bi(CH), Bi(o-CH), Bi(O&#x2014;CH), Bi(O&#x2014;iCH), Bi(O-tCH), Bi(O-tCH), Sr(THD), Sr(THD)tetraglyme, Sr(MeC). 2THF, Ti(i-OCH), TiO(THD), Ti(TD)(i-OCH), Ta(i-OCH), Ta(iOCH)THD, Nb(i-OCH), Nb(i-OCH)THD.

Dielectric capacitor manufacturing method and semiconductor storage device manufacturing method

In a process for manufacturing a dielectric capacitor, an IrO film, an Ir film, an amorphous film, and a Pt film-are sequentially made on a Si substrate. The SBT film may comprise Bi Sr Ta O , where the atomic composition ratio maybe within the range of 0&lE;Sr/Ti&lE;1.0, 0&lE;Ba/Ti&lE;1.0. The Pt film, the amorphous film, the Ir film, and the IrO film formed into a dielectric capacitor and the amorphous film is annealed to change its amorphous phase to a crystal phase of a perovskite type crystalline structure and thereby obtain the SBT film. The process may include a lower electrode made from an organic metal source material selected from a group consisting of Bi(C H ) , Bi(o-C H ) , Bi(O-C H ) , Bi(O-iC H ) , Bi(O- tC H ) , Bi(O-tC H ) , Sr(THD) , Sr(THD) tetraglyme, Sr(Me C ) &middot;2THF, Ti(i-OC H ) , TiO(THD) , Ti(THD) (i-OC H ) , Ta(i-OC H ) , Ta(iOC H ) THD, Nb(i-OC H ) , Nb(i- OC H ) THD.

A method of producing a bismuth layered compound that includes the steps of providing a substrate, dissolving Bi, Sr and Ta containing compounds in an organic solvent to form a solution having a Bi:Sr:Ta volume ratio of 2:1:2, evaporating the solution and depositing the evaporated solution onto the substrate, heating the substrate to form a thin film having a fluorite structure, and heating the thin film in an oxidizing atmosphere to convert the thin film having a fluorite structure to a thin film comprising Bi,SrTa,O,.

Method of producing bismuth layered compound

A ferroelectric thin film is subjected to heat treatment in an active oxygen atmosphere containing an oxidizing gas such as ozone, N.sub.2 O, or NO.sub.2, thereby preventing occurrence of oxygen defects (oxygen vacancies) in the thin film, and avoiding a deterioration in dielectric characteristics, ferroelectric characteristics, and electric characteristics required for the ferroelectric thin film, such as a reduction in permittivity, an increase in leakage current, a reduction in remanent polarization, and an increase in coercive electric field. Thus, the ferroelectric thin film having stable characteristics can be formed. Further, a nonvolatile memory cell using this ferroelectric thin film as a capacitor is formed.

Manufacturing method for ferroelectric film and nonvolatile memory using

It is intended to provide an electronic material which permits not only PZT but also SBT requiring high-temperature annealing to be used as the material of a dielectric film of a dielectric capacitor in vertical alignment with a transistor so as to connect the lower electrode of the dielectric capacitor to a diffusion layer of the transistor with a Si or W plug; its manufacturing method; and a ferroelectric capacitor and nonvolatile memory. There is also provided a semiconductor device permitting greater freedom in selecting the process temperature and time in a later step subsequent to formation of the plug. Used as the material of the lower electrode of the dielectric capacitor is a material expressed by the composition formula Pd.sub.a (Rh.sub.100-x-y-z Pt.sub.x Ir.sub.y Ru.sub.z).sub.b O.sub.c where a, b, c, x, y and z are composition ratios in atomic %) in which the composition ratios satisfy 70.gtoreq.a.gtoreq.20, 40.gtoreq.b.gtoreq.10, 60.gtoreq.c.gtoreq.15, a+b+c=100, 100&gt;x.gtoreq.0, 100&gt;y.gtoreq.0, 100&gt;z.gtoreq.0 and 100&gt;x+y+z.gtoreq.0. This material is also used as the material of a diffusion preventing layer interposed between the diffusion layer of the semiconductor device and the overlying plug.

Electronic material, its manufacturing method, dielectric capacitor,

Described are a stable semiconductor memory device which is not susceptible to the influence of a heat treatment temperature of a semiconductor substrate of reaction pressure in the CVD method and is free from the reduction in remanence caused by data writing in repetition; and a fabrication process of such a device which comprises forming, by the CVD method, a ferroelectric film containing as a component element bismuth, suing a bismuth alkoxide compound as a raw material, and using the ferroelectric film as a film for the formation of storage capacitance for a semiconductor memory device.

Ferroelectric capacitor and manufacturing the same using bismuth layered

The formation of an electrically conductive phase in an dielectric or ferroelectric composed of a bismuth compound is inhibited. Described is a process for producing a bismuth compound, which comprises introducing a gas of starting materials in an atmosphere under a pressure of 0.01 to 50 torr, depositing a precursor of a bismuth compound on a substrate, and thermally treating it in an oxidizing atmosphere.

Process for producing bismuth compounds, and bismuth compounds

A process is disclosed for making a bismuth layered compound, such as Bi.sub.2 SrTa.sub.2 O.sub.9, by forming mixture of Bi.sub.2 O.sub.3, Ta.sub.2 O.sub.5 and a compound selected from strontium hydroxide or strontium nitrate, grinding the mixture, shaping the ground mixture at elevated temperature and pressure to form a pellet of bismuth strontium tantalum oxide having a fluorite structure and then heating the pellet in a flow of oxygen at 800-1000.degree. C. until a single phase bismuth layered compound is obtained.

Provided is a process for preparing a bismuth compound at a heat treatment temperature lower than conventional. A bismuth compound is prepared by the steps of heating under vacuum to form a reduced phase and heating under oxidizing environment of normal or lower pressure.

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Kanagawa, Japan

Katsuyuki Hironaka