Fujitsu Corporation

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Mitsubishi Denki Kabushiki Kaisha

Katsuyoshi Yamamoto

Toshitaka Mizuguchi

Jun Funakoshi

Tsuyoshi Higuchi

Tadao Inoue

Hiroshi Kobayashi

Seiji Yamagata

Narumi Ohkawa

Asao Kokubo

Hajime Nambu

Haruo Mizukami

A solid-state image pickup device and image pickup method eliminate a dark-current component by adjusting the black level appropriately even if the dark-current component varies among horizontal lines. A pixel array includes light-receiving pixel elements and light-blocking pixel elements disposed such that horizontal lines include the light-blocking pixel elements individually. A readout circuit block reads pixel signals of each of the horizontal lines from the pixel array, inputs the pixel signals to ADC circuits (column ADC circuit block), and outputs the pixel signals of the light-blocking pixel elements. A ramp signal generation circuit obtains the pixel signals of the light-blocking pixel elements output from the readout circuit block, generates a ramp signal by using a reference level of AD conversion adjusted for each of the horizontal lines in accordance with the obtained pixel signals of the light-blocking pixel elements, and inputs the ramp signal to the ADC circuits.

Solid-state image pickup device and image pickup method

First diffusion region constituting a photodiode in each pixel stores carriers generated according to incident light. Second diffusion region is formed at a surface of the first diffusion region to cover a peripheral part of the first diffusion region. In the peripheral part of the first diffusion region, crystal defects tend to occur by a process of forming an isolation region and a gate electrode, so that dark current noise tends to occur. The second diffusion region functioning as a protection layer prevents crystal defects in a manufacturing process. The second diffusion region isn't formed on a center of the surface of the first diffusion region where crystal defects don't tend to occur. In the first diffusion region where the second diffusion region isn't formed, the thickness of a depletion layer increases, which improves light detection sensitivity. This improves detection sensitivity of the photodiode without increasing the dark current noise.

Imaging device

A solid-state imaging device has a substrate in which are formed a pixel array portion having a plurality of pixels, and a peripheral circuitry portion. The device is characterized in that a first multilevel metallization structure is formed over the peripheral circuitry portion, and a second multilevel metallization structure thinner than the first multilevel metallization structure is formed over the pixel array portion.

Solid-state imaging device

A solid-state image pickup apparatus includes a pixel unit consisting of a plurality of pixels; a pixel control unit for controlling the plurality of pixels; a readout unit for reading a signal of each pixel output from the pixel unit; a shutter unit for establishing a state of a light incident to the pixel unit and that of shielding the pixel unit from the light; and a control unit. The control units includes an exposure mode changeover unit for changing over an exposure mode to either a first exposure mode performing a simultaneous exposure for all pixels or a second exposure mode performing an exposure for each of a predetermined unit of pixels. The control unit controls the pixel control unit, readout unit and shutter unit according to an exposure mode changed over by the exposure mode changeover unit.

Solid-state image pickup apparatus including a global shutter function and control method therefor

A CMOS image sensor with an effectively increased aperture ratio and moreover with improved optical sensitivity, and a method of manufacture of such a CMOS image sensor is provided a first aspect of the invention is an image sensor, has a pixel regionin which are formed a plurality of pixels each having at least a photodiode, a reset transistor, and a source-follower transistor; and a peripheral circuit regionin which are formed peripheral circuits which process read-out signals read out from the pixel region, a well region PWin the pixel region PWis formed to be more shallow than a well region in the peripheral circuit region. Also, reset transistors or source-follower transistors are formed in the shallow well region PWof the pixel region, and a photodiode region PHDis embedded below the transistor well region PW

Image sensor with embedded photodiode region and manufacturing method for same

A differential amplifier has a first input terminal to which a voltage of a noise signal of the solid-state imaging device is supplied and a second input terminal to which a voltage of a temporary data signal having the noise signal of the solid-state imaging device superposed thereon is supplied. The differential amplifier inverts an output signal when a magnitude relationship in voltage between the first and second input terminals becomes reverse. A measurement circuit measures a variation amount of a voltage of the second input terminal from when the voltage of the second input terminal begins to vary in a direction to reverse the magnitude relationship to when the output signal of the differential amplifier is inverted, and outputs a measurement result as a digital value indicating a voltage of a real data signal obtained by removing the noise signal from the temporary data signal.

Data read circuit of solid-state imaging device, imaging apparatus, and data read method for solid-state imaging device

The present invention is an image sensor having a pixel array, which arranges pixels having photoelectric conversion circuits in rows and columns; and a pixel selecting circuit for selecting each pixel, wherein the pixel selecting circuit selects pixels of all rows and/or pixels of all columns, and selects a pixel signal at every plural pixels among the selected pixel signals, and pixels selected from a pixel block of a plurality of rows and columns within the pixel array are dispersed within this pixel block.

CMOS image sensor for suppressing degradation of spatial resolution and generating compressed image signals

An imaging device provided with a read circuit in which a light-shielding region is formed in a part of an image region where a plurality of optical/electrical conversion devices is two-dimensionally arrayed in the row and column directions and which converts a optically detected signal outputted from each of the optical/electrical conversion devices for each of the column into a digital signal, comprises a storage device for storing the outputted digital signal outputted in relation with the optical/electrical conversion device in the light-shielding region and a difference calculation device for calculating a difference between the outputted digital signal in relation with the optical/electrical conversion device in a light-receiving region except the light-shielding region and a value stored in the storage device.

Imaging device with light-shielding region, control method thereof and CMOS image sensor with light-shielding region

A second source follower circuit of a reference voltage generator includes a transistor having the same characteristics as a first source follower circuit of a pixel. Accordingly, the second source follower circuit can generate a second reference voltage according to the change in characteristics of the first source follower circuit. A noise voltage switching circuit outputs a first voltage as a noise voltage to a pixel signal generator when the noise voltage is equal to or lower than the second reference voltage. In a reset state, the noise voltage and the second reference voltage always have a predetermined voltage difference. Therefore, deterioration in image quality can be prevented even when capturing a subject having high brightness. Since a trimming circuit or the like selecting any one of a plurality of reference voltages according to characteristics of a formed transistor becomes unnecessary, the cost of an imaging device can be reduced.

An image sensor in which a plurality of pixels having at least a photodiode, a reset transistor, and source follower transistor are formed, wherein each pixel comprises an electrical-charge transfer gate transistor between the photodiode and reset transistor, and a floating diffusion region constituting a node connecting the reset transistor and transfer gate transistor is connected to the gate of the source follower transistor. Further, a photodiode region is embedded below a well region in which the reset transistor and source follower transistor of each pixel are formed. In addition, the photo diode region is not formed below at least a partial region of the floating diffusion region.

Image sensor with embedded photodiode region and fabrication method thereof

A method for controlling a solid-state imaging apparatus, which includes a plurality of pixels, includes selecting a resetting element of one of the pixels, resetting a detecting unit connected to the pixel, transmitting to a detecting unit, an electric charge accumulated after photoelectric conversion performed by a photoelectric converting element of the pixel, and providing control to set a second end of a transmitting control signal line to an open state.

Solid-state imaging apparatus and control method with transmission control hold circuit

An image sensor includes: a pixel unit that outputs a first signal including an offset voltage inherent to a pixel; a CDS unit that performs correlated double sampling of a second signal that is obtained from the first signal by canceling the offset voltage inherent to the pixel, and outputs the second signal after the correlated double sampling as a third signal including an offset voltage due to the CDS unit; and an ADC unit that performs analog-to-digital conversion of a fourth signal that is obtained from the third signal by canceling the offset voltage due to the CDS unit.

Image sensor capable of cancelling offset voltage of semiconductor device included therein

A circuit for correction of white pixel defects capable of complementing white pixel faults without using a storage device for holding white pixel fault spots, and an image sensor using the circuit for correction of white pixel defects. Pixels constituting a pixel section are sequentially subjected to white pixel fault complementation process. A nearby pixel data holding section acquires pixel data from a readout circuit and holds the data. A comparison-determination section compares lightness of a target pixel with that of a nearby pixel and determines, based on the comparison result, whether or not the target pixel is associated with a white pixel fault having a lightness higher than that of the nearby pixel by a predetermined value or more. When it is judged by the comparison-determination section that the target pixel is associated with a white pixel fault, a complementary calculation section performs a complementary calculation by using the pixel data of the target and nearby pixels held by the nearby pixel data holding section, to generate complemented data.

Circuit for correction of white pixel defects and an image sensor using the circuit for correction of white pixel defects

An image sensor, includes: a plurality of pixel circuits, each of which comprises a photoelectric conversion element, a first transistor controlled by a detection signal generated by the photoelectric conversion element, and a second transistor connected to the first transistor and controlled by a select line; and a common amplifier circuit, which is provided commonly to the plurality of pixel circuits, and which has a third transistor connected in parallel to the first transistor, and a current circuit for supplying current to the first and third transistors, wherein an amplifying circuit, which amplifies the detection signal, is formed by the first transistor in a pixel circuit selected by the select line, and by the third transistor in th common amplifier circuit.

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Kawasaki, Japan

Katsuyoshi Yamamoto