Kabushiki Kaisha Toshiba

Kioxia Corporation

Renesas Electronics Corporation

Renesas Technology Corp.

Toshiba Memory Corporation

Mitsubishi Denki Kabushiki Kaisha

Hitachi Plant Technologies, Ltd.

Mitsubishi Electric System Lsi Design Corporation

Katsuyoshi Watanabe

Taku Nishiyama

Atsushi Kondo

Naohisa Okumura

Seiji Ikari

Mamoru Sakugawa

Takashi Nasu

Kazuhide Doi

Tsutomu Kumagai

Takeshi Ikuta

Tomohiro Sakurai

Akihisa Fujimoto

Noriya Sakamoto

Masahiko Ikemoto

Shinya Nagata

Tetsuya Sato

Hideaki Yamamoto

Hideo Nakamura

Toshitada Saito

Keisuke Sato

Soichi Homma

Shigeto Endo

Takehiko Shimomura

Michio Ido

Takatsugu Kitora

Yasuo Takemoto

Tadanobu Okubo

Hideki Kawamura

Toshiharu Kishimura

Naoki Watase

Hidetoshi Suzuki

Yuichi Hotta

Yuji Shimoda

Yuuji Ogawa

Tsubasa Natsumeda

Junichi Onodera

Kazuo Sakakibara

According to one embodiment, a semiconductor memory device includes a housing and terminals. The housing has a first end edge extending in a first direction and a second end edge opposite to the first end edge. The terminals include signal terminals and include first terminals, second terminals, and third terminals. The first terminals are arranged in the first direction at a position close to the first end edge. The second terminals are arranged in the first direction with intervals at a position closer to the first end edge than the second end edge. The first plurality of terminals are closer to the first end edge than the second plurality of terminals are. The third terminals are arranged in the first direction with intervals at a position closer to the second end edge than the first end edge.

Semiconductor memory device

Integrated circuit card

Integrated circuit built-in card

According to one embodiment, a semiconductor storage device includes a housing, a plurality of terminals, signal terminals, a controller, signal wiring, and a memory. The housing has a first face and a second face opposite to the first face. The plurality of terminals is exposed to the first face, extends in a first direction, and is spaced apart in a second direction intersecting with the first direction. A signal terminal included in the plurality of terminals has a first end in the first direction, and a second end opposite to the first end in the first direction, the second end being closer to a contact position with a socket contact than the first end. The controller is located in the housing. The signal wiring extends from the first end in the housing and electrically connects the first end and the controller. The memory is electrically connected to the controller in the housing.

Semiconductor storage device

A memory card includes a substrate, a nonvolatile memory on the substrate, a memory controller on the substrate and configured to control access to the nonvolatile memory, an interface terminal for external wired connection, on the substrate, an antenna, a plain region surrounded by the antenna including a first region that overlaps with the substrate and a second region that does not overlap with the substrate, and a communication controller disposed on the substrate, electrically connected to the antenna, and configured to wirelessly communicate with an external device through the antenna, using power generated at the antenna by an electromagnetic induction caused by the external device.

Wirelessly-communicable memory card

There is a need to provide a microcomputer capable of eliminating an external terminal for endian selection. Flash memory includes a user boot area for storing a program executed in user boot mode and corresponding endian information and a user area for storing a program executed in user mode and corresponding endian information. A data transfer circuit reads endian information stored in the user boot area or the user area in accordance with operation mode and supplies the endian information to a CPU before reset release of the CPU. Accordingly, an external terminal for endian selection can be eliminated.

Microcomputer having processor capable of changing endian based on endian information in memory

A semiconductor memory card includes a lead frame having external connection terminals, a controller chip mounted on the lead frame and a memory chip mounted on the lead frame. The lead frame, the controller chip, and the memory chip are sealed with a sealing resin layer that has a surface at which the external connection terminals are exposed and a recess surrounding the external connection terminals.

Semiconductor memory card

According to one embodiment, a semiconductor storage device is provided with a memory chip including a storage circuit, a controller chip that controls a memory chip, and a substrate having a first surface and a second surface opposing one another, on the first surface of which the controller chip is mounted. Further, the semiconductor storage device is provided with an external connection terminal formed on the second surface of the substrate, and resin that encapsulates the memory chip, the controller chip, and the substrate, includes a third surface and a fourth surface opposing one another, and has a predetermined mark directly printed only on the fourth surface that is adjacent to the second surface of the substrate.

In an embodiment, a semiconductor memory card includes a lead frame including external connection terminals, a lead portion, a chip component mounting portion and a semiconductor chip mounting portion, a chip component mounted on the chip component mounting portion, a memory chip disposed on the semiconductor chip mounting portion, and a controller chip. A rewiring layer is formed on a surface of the memory chip. The lead frame is resin-sealed. An electric circuit of the controller chip and the memory chip on the lead frame is formed by the lead portion, the rewiring layer and a metal wire connected to electrode pad of the chips, the lead portion, and the rewiring layer.

Inkjet coater

A semiconductor device includes a lead frame having an element support and a lead portion. The lead frame has an area from the element support to inner leads of the lead portion, which is formed flat. First and second semiconductor elements are stacked in order on a lower surface of the lead frame. Electrode pads of the first semiconductor element are connected to the inner leads via first metal wires. Ends of the first metal wires, which are connected to the first semiconductor element, are embedded in the second adhesive layer of the second semiconductor element.

Semiconductor device

Growing community of inventors

Tokyo, Japan

Katsuyoshi Watanabe