Sony Corporation

Katsuyoshi Shibuya

Takeharu Asano

Osamu Goto

Motonobu Takeya

Yasuhiko Suzuki

Masao Ikeda

Shiro Uchida

Tsuyoshi Tojo

Takashi Mizuno

Shinro Ikeda

Katsunori Yanashima

Tomonori Hino

Satoru Kijima

Motonobu Taketani

A semiconductor light emitting device made of nitride III-V compound semiconductors including an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method

A method of manufacturing a semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0&#x3c;y/x&#x2266;0.011 and x&#x2267;450 &#x3bc;m. Alternatively, if the maximum dimension of the substrate is D (cm), its warpage H is in the range of 0&#x3c;H&#x2266;70&#xd7;10(cm), and Z=y/x, D is controlled to satisfy the relation 0&#x3c;D&#x3c;(2/CZ)cos(1&#x2212;HCZ), where C (cm) is the proportionality constant when the radius of curvature of the substrate &#x3c1; (cm) is expressed as 1/&#x3c1;=CZ.

Method of manufacturing a semiconductor light emitting device utilizing a nitride III-V compound semiconductor substrate

A nitride semiconductor having a large low-defect region in a surface thereof, and a semiconductor device using the same are provided. Also, a manufacturing method for a nitride semiconductor comprising a layer formation step using a transverse growth technique where surface defects can easily be reduced, and a manufacturing method for a semiconductor device using the same are provided. On a substrate, a seed crystal part is formed in a stripe pattern with a buffer layer in between. Next, crystals are grown from the seed crystal part in two stages of growth conditions to form a nitride semiconductor layer. Low temperature growing parts with a trapezoid shaped cross section are formed at a growth temperature of 1030&#xb0; C. in the first stage and a transverse growth is dominantly advanced at a growth temperature of 1070&#xb0; C. to form a high temperature growing part between the low temperature growing parts in the second stage. Thereby, hillocks and conventional lattice defects are reduced in a surface of the nitride semiconductor layer which is above the low temperature growing part.

Nitride semiconductor, semiconductor device, and manufacturing methods for the same

Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereof

When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0<y/x&lE;0.011 and x&gE;450 &mgr;m. Alternatively, if the maximum dimension of the substrate is D (cm), its warpage H is in the range of 0<H&lE;70&times;10 (cm), and Z&equals;y/x, D is controlled to satisfy the relation 0<D<(2/CZ)cos (1&minus;HCZ), where C (cm ) is the proportionality constant when the radius of curvature of the substrate &rgr; (cm) is expressed as 1/&rgr;&equals;CZ.

Nitride III-V compound semiconductor substrate, its manufacturing method, manufacturing method of a semiconductor light emitting device, and manufacturing method of a semiconductor device

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Miyagi, Japan

Katsuyoshi Shibuya