Fujitsu Corporation

Katsuyoshi Kobayashi

Taiji Ema

Masao Taguchi

Kenji Nakagawa

Hisatsugu Shirai

A pattern forming method includes the steps of preparing an underlie layer having a surface to be processed; coating a resist film on the underlie layer, the resist film including a substance capable ot absorbing light applied during exposure, thereby capable of attenuating light reflected from the surface of said underlie layer during the exposure, in comparison to a resist film not containing the substance; and transferring a pattern of a photomask onto the resist by using a modified illumination system, the photomask, and a projecting lens, the modified illumination system radiating principal light from the direction offset from an optical axis of a condenser lens. Exposure is performed by relieving the influence of light reflection from an underlie layer surface by using resists whose transmittance have been adjusted, and by using a stepper with a modified illumination system. A sufficient depth of focus is obtained and the resolution of the resist is substantially improved. A resist pattern of a good shape can be obtained by relieving the influence of light reflection from the underlie layer surface.

Deep UV photolithography with reduced halation

A method of calibrating a pattern inspection device including the steps of determining a first position of a pattern formed on a substrate by holding the substrate on a stage with a first orientation and by illuminating the substrate by means of an optical system of the inspection device, determining a second position by holding the substrate on the stage with a second, different orientation and by illuminating the substrate by the foregoing optical system, and by comparing the first and second positions thus obtained. In each of the foregoing steps for detecting the first and second positions, two opposing edges of the pattern are detected from an image acquired from the substrate, wherein the first and second positions are determined as a midpoint of the two opposing edges.

Calibration of semiconductor pattern inspection device and a fabrication

A method for fabricating a semiconductor device comprises the steps of defining a plurality of regions on a substrate, exposing a first pattern that extends over a plurality of such regions such that the first pattern is exposed on the plurality of regions simultaneously, and exposing a plurality of second patterns that are identical in size and shape and isolated from each other, consecutively for each of the plurality of regions.

Growing community of inventors

Kawasaki, Japan

Katsuyoshi Kobayashi