Fujitsu Corporation

Katsuyoshi Kirikoshi

Eiichi Kawamura

Isamu Hanyu

Teruyoshi Yao

A semiconductor device includes a first insulation layer including a first conductor pattern, a second insulation layer formed on the first insulation layer and including a second conductor pattern, and a third conductor pattern formed on the second insulation layer, wherein there is formed a first alignment mark part in the first insulation layer by a part of the first conductor pattern, the third conductor pattern is formed with a second alignment mark part corresponding to the first alignment mark part, the first and second alignment marks forming a mark pair for detecting alignment of the first conductor pattern and the third conductor pattern, the second conductor pattern being formed in the second insulation layer so as to avoid the first alignment mark part.

Semiconductor device, semiconductor substrate and fabrication process of a semiconductor device

Through use of a line pattern which becomes a pattern under measurement and a zone pattern in a zonal shape which becomes a flare causing pattern forming a light transmission region which surrounds the line pattern and causes local flare to occur on the line pattern, the effect of the local flare due to the zone pattern on the line pattern is measured as a line width of the line pattern for evaluation. Further, this measurement value is used to compensate the effect of the local flare on each real pattern.

Growing community of inventors

Kawasaki, Japan

Katsuyoshi Kirikoshi