Toagosei Company, Ltd.

Toagosei Chemical Industry, Co., Ltd.

Nikko Company

Kanken Techno Co., Ltd.

Katsuyoshi Harada

Yoshinori Yamada

Hiroshi Suzuki

Hiroaki Takeuchi

Eiichi Suzuki

Hiroki Kourai

Hiroshi Imamura

Seitaro Tajima

Masayoshi Kume

Koji Ishikawa

Akira Moriya

Satoshi Hattori

Masaki Okamoto

Shigeyuki Shibata

Yoshikazu Kagata

Mitsutaka Hasegawa

Hexachlorodisilane is decomposed into hydrochloric acid, silicon dioxide and water by introducing hexachlorodisilane-containing flue gas into a reaction region without moistening the flue gas and by supplying oxygen-containing gas that also contains a small amount of moisture to the reaction region maintained at a temperature at which hexachlorodisilane decomposes.

Method for detoxifying HCD gas and apparatus therefor

[Problems] It is to provide a method for producing a silicon oxide film having better quality than a TEOS at low temperature. And it is to provide a method for manufacturing a semiconductor device wherein an insulating film composed of a silicon oxide is formed. [Means for solving problems] A film composed of a silicon oxide is produced by CVD method where a silane compound represented by the following general formula is reacted. An insulating film is deposited by CVD method where a silane compound represented by the following general formula is reacted.HSi(OR)(In the above formula, R is an alkyl group of carbon number from 1 to 5, and n is an integer from 0 to 2.)

Method for producing silicon oxide film

An object of the present invention is to provide a process of producing alkoxysilanes, which does not use a chlorosilane as the intermediate raw material, is improved in view of the environment, and is satisfactory with respect to the yield of a desired material. The present invention is concerned with a process of producing an alkoxysilane including hydrosilylating (A) an organosilicon compound having at least one hydrogen-silicon bond and at least one alkoxy group and (B) an organic compound having a carbon&#x2014;carbon unsaturated bond in vapor phase in the presence of a mixture containing a hydrosilylation catalyst and a polyalkylene glycol and supported on a carrier, thereby adding hydrogen and silicon of the compound (A) to the carbon&#x2014;carbon unsaturated bond in the compound (B).

Process of producing alkoxysilanes

A remote control running toy comprises a pair of uprights ( ), each having a kingpin ( ) for steerably supporting the wheels ( ); and a steering mechanism ( ) which is coupled through steering rods ( ) with the uprights ( ); wherein the running toy comprises a coil-shaped spring member ( ) for absorbing a shock transmitted via the uprights ( ) to the steering rods ( ). Thereby, the remote control running toy is provided, which is able to prevent the steering rods from being damaged, even if a strong shock acts onto the front wheels, thus improving the reliability of the running toy.

Toy vehicle with shock absorbing steering mechanism

The novel quaternary ammonium salt according to the invention has two quaternary ammonium groups connected to a benzene ring, wherein two C alkyl groups and one C alkyl group are connected per one nitrogen atom constituting the quaternary ammonium. The compound is used as an antimicrobial agent, exhibits a high safety to human as compared with known antimicrobial agents, exerts an excellent sterilizing effect itself and exhibits a wide sterilizing spectrum. In particular, the compound is used as a presevative for eye drop.

Quaternary ammonium salt and process for the preparation thereof

A solid silica derivative which is represented by the general formula H.sub.n SiO.sub.(4-n)/2 wherein n is a real number larger than 0 but smaller than 2 and which contains Si--H bond, said solid silica derivative being able to be easily produced in a high yield by subjecting to hydrolysis-condensation an alkoxysilane represented by the mean general formula H.sub.n --Si(OR.sup.0).sub.4-n in which R.sup.0 represents an alkyl group having 1 to 4 carbon atoms, plural R.sup.0 groups may be the same as or different from one another and n is a real number greater than 0 but smaller than 2, using water in an amount of (4-n)/2 moles or more per mole of the alkoxysilane at a pH of 10.5 or less.

Solid silica derivative and process for producing the same

Alkoxysilane composition, which is inhibited from disproportionation reaction that may cause production of monosilanes or reduction in purity of products, contains an alkoxysilane represented by the formula [I] and substantially free from alcohols:

Alkoxysilane composition inhibited from disproportionation reaction

In a process for producing trialkoxysilanes by reaction of a metallic silicon and an alcohol having 1 to 4 carbon atoms, the reaction is effected (1) using as the metallic silicon one containing 0.30 to 0.37% by weight of aluminum, (2) using as the catalyst cuprous chloride prepared by a wet process, and (3) allowing aluminum and/or an aluminum compound to coexist, thereby securing a high conversion rate of metallic silicon, and accordingly decreasing the amount of unreacted metallic silicon and suppressing discharge of industrial wastes with eliminating environmental problems.

Process for producing trialkoxysilanes

A process for producing a trialkoxysilane comprising reacting metallic silicon and an alkyl alcohol having from 1 to 4 carbon atoms in the presence of a catalyst, in which the reaction is carried out in a gaseous phase in the presence of a halide. The process achieves a high selectivity of a trialkoxysilane and a high conversion of silicon while inhibiting formation of by-products. Where the process of the present invention is carried out in a fluidized bed system, a satisfactory fluid state can be maintained, and the reaction temperature can easily be controlled.

Process for producing trialkoxysilane

The present invention provides a process for the vapor-phase epitaxial growth of a Si single crystal film on a Si single crystal substrate using diluted disilane, in which the process is carried out at a linear speed of diluted disilane on the surface of the Si single crystal substrate is in the range of 5 to 100 cm/min. and, as desired, the substrate is subjected to the heat pretreatment in a hydrogen stream at a temperature of 1,000.degree. C. or higher for a period of 30 minutes or longer before the epitaxial growth.

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Tokyo, Japan

Katsuyoshi Harada