Nuvoton Technology Corporation Japan

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Katsuya Samonji

Toru Takayama

Shinji Yoshida

Kazuhiko Yamanaka

Tohru Nishikawa

Tougo Nakatani

Hiroyuki Hagino

Masayuki Ono

Takashi Kano

Masaaki Yuri

Osamu Imafuji

Hideki Kasugai

Masanori Hiroki

Osamu Tomita

Masao Kawaguchi

Kazuya Yamada

Hideo Kitagawa

Daisuke Ikeda

Hiroshi Asaka

Satoko Kawasaki

Gen Shimizu

Shinji Ueda

Mitsuru Nishitsuji

Ryoji Hiroyama

Keishi Kouno

A light source device includes: a first optical element through which emission light emitted from each of semiconductor laser elements propagates; a first light receiver that receives first propagating light that has propagated through the first optical element; a laser driving controller that controls the semiconductor laser elements; and a measurement circuit that measures a first output value that indicates a received-light intensity of the first propagating light that has been received by the first light receiver. The first light receiver is disposed downstream of the first optical element. The laser driving controller drives the semiconductor laser elements by using a plurality of values of a driving current that are different from each other. The measurement circuit measures the first output value of the first propagating light received by first light receiver for each of the plurality of values of the driving current that are different from each other.

Light emitting assembly with a degradation determiner for the laser elements and for the optical system

Semiconductor light-emitting apparatus includes substrate, submount above substrate, and semiconductor laser above submount. Semiconductor laser and submount are bonded to each other with first bonding material. Substrate and submount are bonded to each other with second bonding material. Submount has first region and second region near substrate, first region being a region on which spacer is disposed, and second region being a region without spacer. Submount is bonded to substrate by covering at least a portion of second region with second bonding material.

Semiconductor light-emitting apparatus and method of fabricating semiconductor light-emitting apparatus

A semiconductor laser device includes: a semiconductor laminate body; an insulating layer disposed above the semiconductor laminate body and including a first opening extending in a first direction that is a direction from a front end surface toward a rear end surface; a first electrode disposed above the semiconductor laminate body; a second electrode disposed above the first electrode and the insulating layer; and an adhesion layer disposed between the second electrode and the insulating layer. The adhesion layer includes a second opening that at least partially overlaps with the first opening in plan view, the first electrode is at least partially disposed inside the first opening and the second opening, and the second electrode and the adhesion layer are disposed above the insulating layer between the first opening and at least one of the front end surface or the rear end surface.

Semiconductor laser device

A semiconductor laser apparatus includes: a semiconductor laser device for junction down mounting that includes a first light-emitting device region and a second light-emitting device region formed separately on a substrate. The first light-emitting device region and the second light-emitting device region in the semiconductor laser device each have a stack structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked in stated order. The first light-emitting device region includes a first electrode film located on the n-type semiconductor layer. The second light-emitting device region includes a second electrode film located on the p-type semiconductor layer. The first electrode film and the second electrode film are electrically connected to each other.

Semiconductor laser apparatus and semiconductor laser device

A nitride light emitter includes: a nitride semiconductor light-emitting element including an AlGaN substrate (0&#x2264;x&#x2264;1) and a multilayer structure above the AlGaN substrate; and a submount substrate on which the nitride semiconductor light-emitting element is mounted. The multilayer structure includes a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked sequentially from the AlGaN substrate. The multilayer structure and submount substrate are opposed to each other. The submount substrate comprises diamond. The nitride semiconductor light-emitting element has a concave warp on a surface closer to the AlGaN substrate.

Nitride light emitter

In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.

Nitride semiconductor light-emitting element, method for manufacturing nitride semiconductor light-emitting element, and nitride semiconductor light-emitting device

A nitride-based light-emitting device includes, on a GaN substrate: a first-conductivity-side first semiconductor layer; an active layer; and a second-conductivity-side first semiconductor layer, in the stated order, and further includes an electron barrier layer of a second conductivity type between the active layer and the second-conductivity-side first semiconductor layer, the electron barrier layer including a nitride-based semiconductor containing at least Al. The electron barrier layer has a first region in which an Al composition changes. The Al composition in the first region monotonically increases in a direction from the active layer to the second-conductivity-side first semiconductor layer. An impurity concentration in the second-conductivity-side first semiconductor layer is lower in a region nearer the electron barrier layer than in a region farther from the electron barrier layer.

Nitride-based light-emitting device

Provided are a light source, a light source unit, and a light source module that have small sizes, high output, and high coupling efficiency with an optical system, and further, can efficiently dissipate heat generation sources to exhaust heat. In the light source unit of the present disclosure, the light source is a semiconductor laser array. This configuration can realize high output of the light source, and high output of the whole light source unit. The light source unit includes a lens that converts outgoing beams to parallel beams, and an optical element having a plurality of optical surfaces with different minute inclination angles with respect to a principal surface. The minute inclination angles of the plurality of optical surfaces that intersect with optical rays of the plurality of outgoing beams passing through a principal point of the lens are opposite to one another with respect to the principal surface.

Light source, light source unit, and light source module using same

A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

Nitride semiconductor light emitting device

A semiconductor laser device includes a semiconductor multilayer structure selectively grown on a substrate other than on a predetermined region of the substrate. The semiconductor multilayer structure includes an active layer, and has a stripe-shaped optical waveguide extending in a direction intersecting a front facet through which light is emitted. The active layer has an abnormal growth portion formed at a peripheral edge of the predetermined region, and a larger forbidden band width portion formed around the abnormal growth portion and having a larger width of a forbidden band than that of a portion other than the abnormal growth portion of the active layer. The optical waveguide is spaced apart from the abnormal growth portion and includes the larger forbidden band width portion at the front facet.

Semiconductor laser device and method for manufacturing the same

A semiconductor laser device comprises, on top of an active layer, an n-type cladding layer of AlGaAs and a p-type cladding layer of (AlGa)InP for defining a barrier height. The p-type cladding layer for defining a barrier height contains more component elements than the n-type cladding layer. The potential difference between the conduction band edges of the p-type cladding layer for defining a barrier height and the active layer is greater than the potential difference between the conduction band edges of the n-type cladding layer and the active layer. The carriers in the active layer are prevented from overflowing into the p-type cladding layer and a material having a high thermal conductivity is used for the n-type cladding layer to prevent the phenomenon of thermal saturation, thereby providing improved optical output.

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Toyama, Japan

Katsuya Samonji