Ebara Corporation

Kyocera Corporation

Shin-etsu Chemical Co., Ltd.

Fuji Electric Co., Ltd.

Octec, Inc.

Okutec Co., Ltd.

Katsuya Okumura

Masahiro Hatakeyama

Nobuharu Noji

Hirosi Sobukawa

Kenji Terao

Yoshihiko Naito

Yukio Inazuki

Hideo Kaneko

Hiroki Wakimoto

Tomoyuki Yamazaki

Takeshi Muneishi

Kazuo Shimoyama

Masayuki Mogi

Tetsushi Tsukamoto

Toshihiko Uemura

Provided is a method and an apparatus for inspecting a sample surface with high accuracy. Provided is a method for inspecting a sample surface by using an electron beam method sample surface inspection apparatus, in which an electron beam generated by an electron gun of the electron beam method sample surface inspection apparatus is irradiated onto the sample surface, and secondary electrons emanating from the sample surface are formed into an image toward an electron detection plane of a detector for inspecting the sample surface, the method characterized in that a condition for forming the secondary electrons into an image on a detection plane of the detector is controlled such that a potential in the sample surface varies in dependence on an amount of the electron beam irradiated onto the sample surface.

Method and apparatus for inspecting sample surface

A semiconductor device is disclosed which includes active section, edge termination sectionhaving a voltage blocking structure and disposed around active section, and separation sectionhaving a device separation structure and disposed around edge termination section. A surface device structure is formed on the first major surface of active section, trenchis formed in separation sectionfrom the second major surface side, and p-type separation regionis formed on the side wall of trenchsuch that p-type separation regionis in contact with p-type channel stopper regionformed in the surface portion on the first major surface side and p-type collector layerformed in the surface portion on the second major surface side. The semiconductor device and the method for manufacturing the semiconductor device according to the invention facilitate preventing the reverse blocking voltage from decreasing and shorten the manufacturing time of the semiconductor device.

Semiconductor device and the method for manufacturing the same

Because a sample holderis composed of a plurality of convex partsprovided on a top face of a base substance, and the plurality of convex partsare spherical surfacesformed of a single crystal or amorphous material, frictional wear of the sample at contact parts between a sampleand the convex partsis reduced, thereby making it possible to inhibit particle generation. Further, because a joining layeris formed of a single crystal or amorphous material, there is no defect that particles scattered on the sample holderfill up it, which makes it possible to easily keep it in a clean state by cleaning, and it is possible to effectively reduce reattachment of particles to the sample

Sample holder, sample suction device using the same, and sample processing method

A photomask blank having a film of at least one layer formed on a substrate is manufactured by forming a film on a substrate and irradiating the film with light from a flash lamp. A photomask is manufactured from the thus manufactured photomask blank by forming a patterned resist on the film on the blank by photolithography, etching away those portions of the film which are not covered with the resist, and removing the resist. The photomask blank and photomask have minimized warpage and improved chemical resistance.

Methods of manufacturing photomask blank and photomask

Growing community of inventors

Shinjuku-ku, Japan

Katsuya Okumura