Kabushiki Kaisha Toshiba

Tokyo Electron Limited

Other

Ebara Corporation

Tokyo Shibaura Denki Kabushiki Kaisha

Ckd Corporation

Fuji Electric Co., Ltd.

Ibiden Company Limited

Sharp Kabushiki Kaisha Corporation

Kyocera Corporation

Toshiba Memory Corporation

Hamamatsu-photonics K.k.

Screen Holdings Co., Ltd.

Kabushiki Kaisha Yaskawa Denki

Ushio Denki Kabushiki Kaisha

Katsuya Okumura

Shinichi Ito

Nobuo Hayasaka

Hiroyuki Yano

Motosuke Miyoshi

Manabu Tsujimura

Norio Kimura

Hisashi Kaneko

Tohru Watanabe

Haruo Okano

Kazuyoshi Sugihara

Mie Matsuo

Keiichi Sasaki

Kyoichi Suguro

Takahiro Kitano

Hideki Shibata

Tetsuo Matsuda

Atsushi Ando

Keiji Horioka

Seiji Ishikawa

Yoshitaka Tsunashima

Atsuko Sakata

Kazuya Nagaseki

Yuichiro Yamazaki

Junji Kunisawa

Masahiko Hasunuma

Noriaki Matsunaga

Tetsuro Nakasugi

Rempei Nakata

Toru Watanabe

Kei Hayasaki

Masayuki Hattori

Junichi Wada

Takamasa Usui

Atsushi Murakoshi

Makoto Sekine

Tokuhisa Ohiwa

Soichi Inoue

Shinji Sato

Toshihisa Nozawa

Katsuhiko Hieda

Masamitsu Itoh

Kenji Kawano

Gaku Minamihaba

Yukiteru Matsui

Masako Kodera

Masaaki Ueda

Hiroshi Tomita

Akihiro Kojima

Koji Mishima

Yusuke Kohyama

Kenji Nakamura

Hiroaki Inoue

Kazuyuki Higashi

Keitaro Imai

Hirokuni Hiyama

Akihiro Kajita

Shinji Himori

Naofumi Nakamura

Yoshikazu Takahashi

Hajime Nagano

Yuuichi Mikata

Yukihiro Ushiku

Haruo Nakazawa

Tadashi Iijima

Ken Nakao

Koh Yoshikawa

Hiroaki Yamada

Naoto Miyashita

Kazuhiro Eguchi

Hideaki Sakurai

Hiroko Nakamura

Yu Ishii

Jeffrey P Gambino

Koji Sakui

Koji Hashimoto

Masayuki Tanaka

Satoshi Kaneko

Masaru Koyanagi

Takeshi Hamamoto

Ichiro Mizushima

Masahiro Hatakeyama

Nobuharu Noji

Yuichi Sato

Takeshi Murakami

Hozumi Yasuda

Junichi Miyamoto

Munehiro Ogasawara

Masahiro Kiyotoshi

Yuichi Abe

Motohiro Suyama

Hirofumi Inoue

Hirosi Sobukawa

Miyoko Shimada

Shoji Mimotogi

Hisashi Okuchi

Yasunobu Onishi

Ryoichi Inanami

Toshiyuki Matsumoto

Hideshi Miyajima

The invention of the present application provides a self-heating sheet-like material for moisture absorption and desorption which includes at least a self-heating layer and an adsorption layer in a laminate thereof, in which the self-heating layer and the adsorption layer are connected in a state in which heat conduction is enabled; a moisture absorption and desorption body formed of this material; and a moisture absorption and desorption device.

Self-heating sheet-like material for moisture absorption and desorption, moisture absorption and desorption body, and moisture absorption and desorption device using the same

The present invention provides a cushion member and a stage member provided with the cushion member, the cushion member including a non-woven fabric formed by binding or entangling metal fibers, wherein when the cushion member is compressed, the cushion member undergoes compressive deformation and the following compressive deformation ratio is 5% to 80%:Compressive deformation ratio=(0&#x2212;1)/0&#xd7;100,

Cushion paper

An object of the present invention to provide a resistor element which can be mounted at a higher density and can cope with a wide range of resistance values, the present invention provides a resistor element including a resistor which mainly contains metal fibers, electrodes which are formed at an end portion of the resistor, and an insulating layer which is in contact with the resistor and the electrodes.

Resistor element

Disclosed is a substrate treating apparatus including the following units: a supplying unit which supplies a process liquid including a sublimable substance in a melt state on a pattern-formed surface of a substrate W; a solidifying unit which solidifies the process liquid on the pattern-formed surface to produce a solidified body; and a sublimating unit which sublimates the solidified body to remove the solidified body from the pattern-formed surface. In this apparatus, the sublimable substance includes a fluorinated carbon compound.

Substrate treating apparatus and substrate treating method

A semiconductor device having a voltage resistant structure in a first aspect of the present invention is provided, comprising a semiconductor substrate, a semiconductor layer on the semiconductor substrate, a front surface electrode above the semiconductor layer, a rear surface electrode below the semiconductor substrate, an extension section provided to a side surface of the semiconductor substrate, and a resistance section electrically connected to the front surface electrode and the rear surface electrode. The extension section may have a lower permittivity than the semiconductor substrate. The resistance section may be provided to at least one of the upper surface and the side surface of the extension section.

Manufacturing method of semiconductor device having a voltage resistant structure

According to one embodiment, a reticle chuck cleaner for cleaning a reticle chuck of an EUV exposure apparatus includes a substrate having a shape to be carried to the reticle chuck of the EUV exposure apparatus, and an adhesive formed on one of the main surfaces of the substrate.

Reticle chuck cleaner

Semiconductor device having a voltage resistant structure

A semiconductor device that improves the heat cycle resistance and power cycle resistance of a power module. An electrode member in which copper posts are formed in a plurality of perforations cut in a support made of a ceramic material is soldered onto a side of an IGBT where an emitter electrode is formed. By soldering the copper posts onto the electrode, heat generated in the IGBT is transferred to the electrode member and is radiated. In addition, even if a material of which the IGBT is made and copper differ in thermal expansivity, stress on a soldered interface is reduced and distortion is reduced. This suppresses the appearance of a crack. As a result, the heat cycle resistance and power cycle resistance of a power module can be improved.

Semiconductor device

A target for X-ray generation has a substrate and a target portion. The substrate is comprised of diamond and has a first principal surface and a second principal surface opposed to each other. A bottomed hole is formed from the first principal surface side in the substrate. The target portion is comprised of a metal deposited from a bottom surface of the hole toward the first principal surface. An entire side surface of the target portion is in close contact with an inside surface of the hole.

Target for X-ray generation, X-ray generator, and method for producing target for X-ray generation

Semiconductor device, electrode member and electrode member fabrication method

A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.

Multichip semiconductor device, chip therefor and method of formation thereof

A capacitor having a high quality and a manufacturing method of the same are provided. A capacitor has a lower electrode formed on an oxide film, a dielectric layer formed on the lower electrode, an upper electrode formed so as to face the lower electrode with the dielectric layer between, and an upper electrode formed so as to cover the upper electrode, an opening portion of the upper electrode and an opening portion of the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to pattern the dielectric layer by using the upper electrode as a mask, and provide a capacitor having a high-quality dielectric layer by preventing impurity diffusion into the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to prevent the dielectric layer from being exposed to etching liquid, liquid developer, etc.

Capacitor and manufacturing method thereof

There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5&#xd7;10q&#x3b3; (mm) given with respect to a surface tension &#x3b3; (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5&#xd7;10(m&#xb7;sec/N).

Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus

Growing community of inventors

Yokohama, Japan

Katsuya Okumura