Kabushiki Kaisha Toshiba

Katsuya Okamura

Shinichi Ito

Tatsuhiko Ema

Riichiro Takahashi

Hiroyuki Yasui

Masaru Okamoto

Choji Yamazaki

In this disclosure, air flow is formed above chemical liquid film and a move of the chemical liquid is generated by making the air flow into a contact with the surface of chemical liquid. Further, a negative pressure is generated in a space between a processing object substrate and a plate by rotating the plate. Consequently, uniformity of processing of chemical liquid is improved, so that liquid removing step can be carried out effectively. As a result, yield rate of chemical liquid treatment can be improved.

Chemical liquid processing apparatus for processing a substrate

Chemical liquid processing apparatus for processing a substrate and the method thereof

In an exhaust gas processing apparatus for an internal combustion engine, supply power is fed to a corona discharge tube via a short-pulse high-repetition switching element to produce a corona. A harmful substance in exhaust gas of the internal combustion engine is removed by the corona. An MAGT (MOS Assisted Gate-Triggered Thyristor) is used as the short-pulse high-repetition switching element. Thus, the life of the switching element is increased and a high purification performance is achieved even at the time of start of operation when the temperature of exhaust gas is low.

Exhaust gas processing apparatus

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Kanagawa-ken, Japan

Katsuya Okamura