Sanyo Electric Co., Ltd.

Semiconductor Components Industries, LLC

Sanyo Semiconductor Co., Ltd.

Katsuya Okabe

Tsuyoshi Takahashi

Akira Hatsugai

Yoshimasa Amatatsu

Minoru Akaishi

Satoshi Onai

Yoshiaki Sano

Akira Yamane

A conventional semiconductor device has a problem that reduction of a connection resistance value between wiring layers is difficult because of an oxide film formed between the wiring layers. In a semiconductor device of this invention, a first metal layer is embeded in opening regions which connect a first wiring layer and a second wiring layer and an opening is formed in a spin coated resin film formed on the first metal layer. In the opening, a Cr layer forming a plating metal layer and a Cu plated layer are connected to each other. With this structure, the spaces among crystal grains in portions in the Cr layer on the first metal layer are wide, which causes the portions to be coarse. In the coarse portions in the Cr layer, an alloy layer formed of the second metal layer and the Cu plated layer is formed, and thus, the connection resistance value is reduced.

Semiconductor device and manufacturing method of the same

In a semiconductor device according to the present invention, a plurality of opening regionstoare formed in an insulating film on a pad electrode. A metal layerformed on the pad electrodehas a plurality of concave portionstoformed therein by covering the opening regionsto. Moreover, in a peripheral portion at a bottom of each of the concave portionstoin the metal layer, the metal layerand a Cu plating layerreact with each other. By use of this structure, the metal reaction area serves as a current path on the pad electrode. Thus, a resistance value on the pad electrodeis reduced.

Semiconductor device and manufacturing method thereof

Disclosed is an optical semiconductor integrated circuit device has an opening portion in an insulating layer, which is formed in a light receiving region of a photodiode stepwise. Thus, a step of the opening portion is reduced, leading to an improvement of a step coverage of a light shadowing film formed on the insulating film so as to cover the insulating film. By the improvement of the step coverage of the opening portion, the light shadowing film located on a plane of the light shadowing film of the photodiode is not broken. A problem that a conventional light shadowing film is broken is solved in the photodiode for a blue laser beam.

Optical semiconductor integrated circuit device

In an existing optical semiconductor integrated circuit device, a multi-layered wiring layer is formed on a top surface of a substrate. Therefore, a film thickness of an insulating layer on a top surface of a photodiode could be uniformed with difficulty. Thus there was a problem in the constitution of the insulating layer wherein light incidence was caused to fluctuate, and thereby a desired sensitivity to light could not be obtained. In an optical semiconductor integrated circuit device according to the present invention, after a multi-layered wiring layer is formed on a top surface of a substrate, an insulating layer on a top surface of an anti-reflection film of a photodiode is dry-etched to remove. At this time, a barrier metal layer is used as an etching stopper film. Thereby, in the invention, a manufacturing process can be simplified and owing to adoption of the dry etching miniaturization can be realized. Furthermore, since the anti-reflection film is exposed from the insulating layer, fluctuation of incident light can be suppressed and the sensitivity to light can be improved.

Manufacturing method of optical semiconductor integrated circuit device

In an existing optical semiconductor integrated circuit device, a silicon nitride film that is an anti-reflection film is used as an etching stopper film at the etching of an insulating film and by means of wet etching the insulating film is removed once for all. Accordingly, there is a problem in that the processing accuracy is poor. In an optical semiconductor integrated circuit device according to the present invention, after a multi-layered wiring layer is formed on a top surface of a silicon substrate, an insulating layer on a top surface of an anti-reflection film of a photodiode is removed by means of dry etching. At this time, a polycrystal silicon film is used as an etching stopper film. Thereby, in the photodiode according to the invention, although the dry etching is used, since a silicon nitride film that is an anti-reflection film is not over-etched, the dispersion of film thickness thereof can be inhibited from occurring. As a result, a photodiode according to the present invention can realize an improvement in the sensitivity of incident light and a miniaturization structure can be realized.

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Gunma, Japan

Katsuya Okabe