Hitachi, Ltd.

Renesas Technology Corp.

Other

Hitachi Device Engineering Co., Ltd.

Katsuya Oda

Katsuyoshi Washio

Masao Kondo

Shinichi Saito

Hiromi Shimamoto

Makoto Miura

Masamichi Tanabe

Isao Suzumura

Eiji Oue

Kazuki Tani

Eiji Ohue

Nobuyuki Sugii

Youngkun Lee

Reiko Hayami

Masahiro Aoki

Toshiki Sugawara

Takahiro Onai

Misuzu Sagawa

Etsuko Nomoto

Tadashi Okumura

In order to provide a highly reliable silicon-germanium semiconductor optical element of high luminous efficiency or of low power consumption that can reduce or prevent the occurrence of dislocations or crystal defects on the interface between a light emitting layer or a light absorption layer and a cladding layer, in a silicon-germanium semiconductor optical element, a germanium protective layerof non-light emission is disposed between a germanium light emitting layer or the light absorption layerand a cladding layerdisposed above a substrate. The germanium protective layerhas the electrical conductivity different from electrical conductivity of the germanium light emitting layer or the light absorption layer

Semiconductor optical element

The light emitting device includes an active layer formed on a semiconductor substrate for emitting light, a semiconductor layer of a first conductivity type electrically connected to one end of the active layer, a semiconductor layer of a second conductivity type electrically connected to the other end of the active layer, first and second electrodes, a feedback mechanism for laser oscillation, and a waveguide for guiding the light emitted from the active layer, in which the active layer is made of a semiconductor having an affinity with a silicon CMOS process, and the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, and the waveguide are each made of silicon as a part of the semiconductor substrate.

Light emitting device, manufacturing method thereof, and optical transceiver

To provide a light-emitting element where electrons are efficiently injected into a Ge light emission layer and light can be efficiently emitted, the light-emitting element has a barrier layerwhich is formed on an insulating film, worked in a size in which quantum confinement effect manifests and made of monocrystalline Si, a p-type diffused layer electrodeand an n-type diffused layer electroderespectively provided at both ends of the barrier layer, and a monocrystalline Ge light emission partprovided on the barrier layerbetween the electrodes. At least a part of current that flows between the electrodesflows in the barrier layerin a horizontal direction with respect to a substrate

An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.

Light-emitting device, light-receiving device and method of manufacturing the same

A semiconductor photodiode includes a semiconductor substrate; a first conduction type first semiconductor layer formed above the semiconductor substrate; a high resistance second semiconductor layer formed above the first semiconductor layer; a first conduction type third semiconductor layer formed above the second semiconductor layer; and a second conduction type fourth semiconductor layer buried in the second semiconductor layer, in which the fourth semiconductor layer is separated at a predetermined distance in a direction horizontal to the surface of the semiconductor substrate.

Semiconductor photodiode device and manufacturing method thereof

A semiconductor photodiode device includes a semiconductor substrate, a first buffer layer containing a material different from that of the semiconductor substrate in a portion thereof, a first semiconductor layer formed above the buffer layer and having a lattice constant different from that of the semiconductor substrate, a second buffer layer formed above the first semiconductor layer and containing an element identical with that of the first semiconductor layer in a portion thereof, and a second semiconductor layer formed above the buffer layer in which a portion of the first semiconductor layer is formed of a plurality of island shape portions each surrounded with an insulating film, and the second buffer layer allows adjacent islands of the first semiconductor layer to coalesce with each other and is in contact with the insulating film.

A manufacturing method of a semiconductor device in which the oxygen and carbon concentrations are reduced at the interface of each layer making up the semiconductor multilayer film. A first semiconductor layer is formed on a single-crystal substrate in a first reactor; the substrate is transferred from the first reactor to a second reactor through a transfer chamber; and a second semiconductor layer is formed on the first semiconductor layer in the second reactor. During substrate transfer, hydrogen is supplied when the number of hydrogen atoms bonding with the surface atoms of the first semiconductor layer is less than the number of surface atoms of the first semiconductor layer, and the supply of hydrogen is stopped when the number of hydrogen atoms bonding with the surface atoms of the first semiconductor layer is greater than the number of surface atoms of the first semiconductor layer.

Semiconductor device and manufacturing method thereof

A bipolar transistor is provided in which both the base resistance and the base-collector capacitance are reduced and which is capable of operating at a high cutoff frequency. The semiconductor device is structured so that the emitter and extrinsic base are separated from each other by an insulator sidewall and the bottom faces of the insulator sidewall, and the emitter are approximately on the same plane. The extrinsic base electrode and the collector region are separated from each other by an insulator.

Semiconductor device with reduced base resistance

A high quality silicon carbide (SiC) layer being substantially lower in threading dislocation density than a prior layer is formed on silicon (Si) substrate. A semiconductor device is fabricated in such a way that a semiconductor buffer layer containing Si in part and being higher in defect density than a Si substrate is formed on the Si substrate on the upper portion of which are formed a plurality of pairs of facets being mirror-symmetrical to the surface orientation of a semiconductor substrate, further on the top of the layer a SiC layer is sequentially formed.

An (SiGe)C layer having a stoichiometric ratio of about 1:1 is locally formed on an Si layer, a large forbidden band width semiconductor device is prepared inside the layered structure thereof and an Si semiconductor integrated circuit is formed in the regions not formed with the layered structure, whereby high frequency high power operation of the device is enabled by the large forbidden band width semiconductor device and high performance is attained by hybridization of the Si integrated circuit.

Semiconductor device, semiconductor circuit module and manufacturing method of the same

A semiconductor device having an MODFET and at least one other device formed on one identical semiconductor substrate, in which an intrinsic region for the MODFET is formed by selective growth in a groove formed on a semiconductor substrate having an insulation film on the side wall of the groove, and single-crystal silicon at the bottom of the groove, is disclosed. The step between the MODFET and the at least one other device mounted together on one identical substrate can be thereby decreased, and each of the devices can be reduced in the size and integrated to a high degree, and the interconnection length can be shortened to reduce power consumption.

Method of manufacturing a semiconductor device

A bipolar transistor is provided which is of high reliability and high gain, and which is particularly suitable to high speed operation. The bipolar transistor operates with high accuracy and with no substantial change of collector current even upon change of collector voltage. It also has less variation than conventional bipolar transistors for the collector current while ensuring high speed properties and high gain. In one example, the band gap in the base region is smaller than the band gap in the emitter and collector regions. The band gap is constant near the junction with the emitter region and decreases toward the junction with the collector region. A single crystal silicon/germanium is a typically used for the base region.

Heterojunction bipolar transistor

A method of manufacturing a semiconductor device comprising a plurality of single-crystal semiconductor layers formed, for example, in an opening of an insulating film, said semiconductor layers having no or very few crystal defects. The method comprises forming in a first growth chamber a first semiconductor layer of a first conductivity type in an opening of an insulating film and subsequently forming in a second growth chamber a second semiconductor layer of a second conductivity type in an opening of an insulating film, while supplying hydrogen to the surface of the substrate when the substrate is transferred from said first growth chamber to said second growth chamber.

Semiconductor device and method for manufacturing the same

Multi-layered, single crystal field effect transistor

A high-speed heterojunction bipolar transistor in a large injection of electrons from the emitter and a method for production thereof. In a typical example of the SiGeC heterojunction bipolar transistor, the collector has a layer of n-type single-crystal Si and a layer of n-type single-crystal SiGe, the base is a layer of heavily doped p-type single-crystal SiGeC, and the emitter is a layer of n-type single-crystal Si. At the heterointerface between the layer of n-type single-crystal SiGe and the layer of p-type single-crystal SiGeC, the bandgap of the p-type single-crystal SiGeC is larger than that of the layer of n-type single-crystal SiGe. Even though the effective neutral base expands due to an increase in electrons injected from the emitter, no energy barrier occurs in the conduction band at the heterointerface between the layer of n-type single-crystal SiGe and the layer of p-type single-crystal SiGeC. Thus, the diffusion of electrons is not inhibited and it is possible to realize high-speed heterojunction bipolar transistors even in the high injection state.

Growing community of inventors

Hachioji, Japan

Katsuya Oda