Kobe Steel, Ltd.

Kabushiki Kaisha Kobe Seiko Sho

Kobelco Research Institute, Inc.

Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

Katsutoshi Takagi

Junichi Nakai

Yuuki Tauchi

Toshiki Sato

Kazuo Yoshikawa

Takashi Onishi

Hideo Fujii

Eiji Iwamura

Seigo Yamamoto

Takashi Oonishi

Toshihiro Kugimiya

Hiroshi Goto

Kotaro Kitashita

Nobuyuki Kawakami

Yuki Tauchi

Hitoshi Matsuzaki

Masaya Ehira

Yoichiro Yoneda

Yuki Iwasaki

Mototaka Ochi

Naoya Fujiwara

Hiroshi Gotou

Moriyoshi Kanamaru

Norihiro Jiko

Kazutaka Kunii

Akira Nanbu

Hidekazu Morimoto

The invention relates to an Al&#x2014;Ni&#x2014;La system Al-based alloy sputtering target where a total area of an Al&#x2014;Ni system intermetallic compound having an average particle diameter of 0.3 &#x3bc;m to 3 &#x3bc;m with respect to a total area of the entire Al&#x2014;Ni system intermetallic compound is 70% or more in terms of an area fraction, and a total area of an Al&#x2014;La system intermetallic compound having an average particle diameter of 0.2 &#x3bc;m to 2 &#x3bc;m with respect to a total area of the entire Al&#x2014;La system intermetallic compound is 70% or more in terms of an area fraction.

Al-Ni-La system Al-based alloy sputtering target

The present invention relates to an Ag alloy film. Particularly, it is preferably used as a reflective film or semi-transmissive reflective film for an optical information recording medium having high thermal conductivity/high reflectance/high durability in the field of optical information recording media, an electromagnetic-shielding film excellent in Ag aggregation resistance, and an optical reflective film on the back of a reflection type liquid crystal display device, or the like. The Ag alloy film of the present invention comprises an Ag base alloy containing Bi and/or Sb in a total amount of 0.005 to 10% (in terms of at %). Further, the present invention relates to a sputtering target used for the deposition of such an Ag alloy film.

AG base alloy thin film and sputtering target for forming AG base alloy thin film

The present invention provides a technique capable of decreasing a generation of splashing upon depositing by using an Al&#x2014;Ni&#x2014;La&#x2014;Cu alloy sputtering target comprising Ni, La, and Cu. The invention relates to an Al&#x2014;Ni&#x2014;La&#x2014;Cu alloy sputtering target comprising Ni, La and Cu, in which (1) a total area of an Al&#x2014;Ni intermetallic compound mainly comprising Al and Ni and having an average grain size of 0.3 &#x3bc;m or more and 3 &#x3bc;m or less is 70% or more by area ratio based on an entire area of the Al&#x2014;Ni intermetallic compound, and (2) a total area of an Al&#x2014;La&#x2014;Cu intermetallic compound mainly comprising Al, La and Cu and having an average grain size of 0.2 &#x3bc;m or more and 2 &#x3bc;m or less is 70% or more by area ratio based on an entire area of the Al&#x2014;La&#x2014;Cu intermetallic compound, in a case where a portion of the sputtering target is observed within a range of from &#xbc;t (t: thickness) to &#xbe;t along a cross section vertical to a plane of the sputtering target by using a scanning electron microscope at a magnification of 2000.

AL-Ni-La-Cu alloy sputtering target and manufacturing method thereof

Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150 to 400&#xb0; C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 &#x3bc;&#x3a9;cm is obtained. The target is made of an Al alloy containing the above elements.

Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices

Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150&#xb0; to 400&#xb0; C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 &#x3bc;&#x3a9;cm is obtained. The target is made of an Al alloy containing the above elements. REEXAMINATION RESULTS The questions raised in reexamination proceedings Nos. 90/007,822 and 90/007,883, filed Nov. 28, 2005 and Nov. 28, 2005 respectively, have been considered, and the results thereof are reflected in this reissue patent which constitutes the reexamination certificate required by 35 U.S.C. 307 as provided in 37 CFR 1.570(e) forreexaminations, and/or the reexamination certificate required by 35 U.S.C. 316 as provided in 37 CFR 1.997(e) forreexaminations.

Aluminum alloy electrode for semiconductor devices

Ag base alloy thin film and sputtering target for forming Ag base alloy thin film

An Al-base alloy sputtering target consisting Ni and one or more rare earth elements, wherein there are 5.0&#xd7;10/mmor more compounds whose aspect ratio is 2.5 or higher and whose equivalent diameter is 0.2 &#x3bc;m or larger, when a cross sectional surface perpendicular to the plane of the target is observed at a magnification of 2000 or higher.

Al-Ni-rare earth element alloy sputtering target

The present invention relates to an Al&#x2014;Ni&#x2014;La&#x2014;Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (&#xbc;)t to (&#xbe;)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al&#x2014;Ni system intermetallic compound having an average particle diameter of 0.3 &#x3bc;m to 3 &#x3bc;m with respect to a total area of the entire Al&#x2014;Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al&#x2014;Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al&#x2014;Ni&#x2014;La&#x2014;Si system intermetallic compound having an average particle diameter of 0.2 &#x3bc;m to 2 &#x3bc;m with respect to a total area of the entire Al&#x2014;Ni&#x2014;La&#x2014;Si system intermetallic compound is 70% or more in terms of an area fraction, the Al&#x2014;Ni&#x2014;La&#x2014;Si system intermetallic compound being mainly composed of Al, Ni, La, and Si.

Al-Ni-La-Si system Al-based alloy sputtering target and process for producing the same

An Ag sputtering targethas three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering targetin planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values Aand Busing the formula below, and selecting larger one of the values Aand Bas the three-dimensional fluctuation of the grain sizes.1=()/&#xd7;100(%)1=()/&#xd7;100(%)

AG base sputtering target and process for producing the same

Al&#x2014;Ni-rare earth element alloy sputtering target

The sputtering target made of a Ag&#x2014;Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89% or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis: intensity of precipitated Bi=[I/I+I+I+I)]/[Bi]. Remarkable lowering of the yield of Bi content in resultant films can be suppressed by using the sputtering target.

Ag-Bi-base alloy sputtering target, and method for producing the same

An Ag sputtering targethas three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering targetin planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes.1=()/&#xd7;100(%)1=()/&#xd7;100(%)

Ag base sputtering target and process for producing the same

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Kobe, Japan

Katsutoshi Takagi