Other

Hitachi, Ltd.

Hitachi Device Engineering Co., Ltd.

Katsutoshi Saito

Iwao Takemoto

Katsumi Matsumoto

Toshio Miyazawa

Hideo Sato

Takashi Kajimura

Syoichi Hirota

Tetsuya Nagata

Naoki Chinone

Makoto Ohkura

Tadashi Fukuzawa

Yukio Takasaki

Takao Kuroda

Jun Gotoh

Masanao Yamamoto

Jun-ichi Umeda

Shin'ichi Nakatsuka

Atsumu Iguchi

Yuuichi Ono

An image display device using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and a manufacturing method thereof. The polycrystalline semiconductor layer is so provided that impurity concentrations are easy to control in LDD regions . The image display device further uses transistors having a gate electrode on an upper surface of the semiconductor layer with an insulating film therebetween, a drain region formed on one side of the gate electrode, and a source region formed on another side of the gate electrode. An activated P-type impurity is added to the area underlying the gate electrode, and an activated N-type impurity is added to the area excluding the area underlying the gate electrode.

Image display device using transistors each having a polycrystalline semiconductor layer

A liquid crystal display apparatus has horizontal and vertical scanning circuits for scanning an array of pixels. An image signal applied to an image signal supply circuit in the form of series of pixel signals is transferred to pixels in the array of pixels designated by the horizontal and vertical scanning circuits. Each of the horizontal and vertical scanning circuits have a series connection of bidirectional shift register stages and are capable of bidirectional scanning. Each of the bidirectional shift register stages includes a pair of latches connected in tandem and is capable of providing an intermediate output and a shift register stage output. The pair of latches of each of the bidirectional shift register stages except those located at both ends of the series connection have respective intermediate and bidirectional shift register stage outputs contributing to designation of pixels to which pixel signals are to be supplied, while the pair of latches of the shift register stages located at each end of the series connection have their bidirectional shift register stage outputs contributing to such designation of pixels and their intermediate output terminals not contributing to such designation of pixels.

Liquid crystal display apparatus including scanning circuit having bidirectional shift register stages

A method for forming a liquid crystal display device includes forming a metal film over a drive substrate, and patterning the metal film to form at least one pixel electrode and an optical shield film. The optical shield film is provided outside of a pixel electrode area and has a width greater than a width of each of the pixel electrode. A resin is deposited over the patterned metal film, and the resin is patterned to form at least one pole spacer and strip spacer. The strip spacer surrounds the pixel electrode area and has a width greater than a diameter of each of pole spacer. Liquid crystal material is supplied into an inside space which is surrounded by the strip spacer, and a sealing material is filled at outer edges of the strip spacer for fixing the drive substrate and a common substrate.

Liquid crystal display device having pole spacers formed over optical shield film

Eliminating differences in cell gap of a liquid crystal panel is effected to prevent display irregularities while avoiding contamination of the liquid crystal material due to unwanted contact of a seal material with the liquid crystal material. To this end, the liquid crystal panel includes a first substrate DSUB having multiple pixel electrodes AL-P in the form of a matrix, a second substrate USUB opposing the first substrate with a specified gap therebetween and having one or more transparent electrodes ITO-C, a liquid crystal layer LC made of a liquid crystal material sealed in the gap between the opposing substrates, and an alignment film on at least one of inner surfaces of the first and second substrates in contact with the liquid crystal layer for controlling alignment of the liquid crystal material. A plurality of pole-like spacers SPC-P are provided in a display area of the first substrate DSUB for retaining the gap between the first and second substrates DSUB, USUB at a predefined value while providing a band or strip-like spacer SPC-S that is made of the same material as that of the pole-like spacers and is formed to surround the display area and also has a width greater than the diameter of the pole spacers along with a sealing material SL filled along the outer edges of the strip spacer SPC-S for allowing the first substrate DSUB and the second substrate USUB to be tightly bonded together.

Liquid crystal display device with optical shield film

A reflection-type liquid crystal display module has a liquid crystal panel including a first substrate of, for example, a rectangular shape, a second substrate opposed to the first substrate and a liquid crystal layer provided in a space between the first substrate and the second substrate to form a display screen, a package for encasing and holding the liquid crystal panel while maintaining the first substrate in an exposed state and a dichroic prism to which the first substrate is attached. At least two sides each of the first substrate have a side edge extruding outwardly over a corresponding side end of the second substrate. The side edges of the first substrate are fixed between the dichroic prism and the package, whereby the second substrate is supported by the first substrate and not by the package.

Liquid crystal display module and projection-type liquid crystal display

A semiconductor laser device including at least one of a laser active layer formed of a super lattice and an optical guide layer formed of another super lattice is disclosed in which part of at least one of the super lattices is converted into a mixed crystal by the impurity induced disordering based upon one of impurity diffusion and impurity ion implantation, to divide the super lattice into a first region formed of the mixed crystal and a second region having the super lattice structure, the width of the second region in directions perpendicular to the lengthwise direction of a laser cavity varies along the above lengthwise direction, and the width of a laser excitation region is smaller than the mean value of the width of the second region, to generate laser oscillation having a single transverse mode and a multi longitudinal mode. Thus, the semiconductor laser device emits a laser beam which is small in astigmatism and low in optical feedback noise.

Semiconductor laser device and method of fabricating the same

In a semiconductor laser device wherein a stripe-shaped impurity-diffused region is disposed in at least parts of semiconductor layers of from a surface semiconductor layer of a semiconductor layer assembly constituting the semiconductor laser device to a second semiconductor layer lying in contact with a first semiconductor layer having an active region, the impurity-diffused region having the same conductivity type as that of the second semiconductor layer and extending at least from the surface semiconductor layer to a depth vicinal to the first semiconductor layer, the impurity region serving as a current path; a semiconductor laser device characterized in that a third semiconductor layer in which the diffusion rate of an impurity for use in the formation of the impurity-diffused region is lower than in the second semiconductor layer is disposed between the surface semiconductor layer and the second semiconductor layer.

Semiconductor laser device

Growing community of inventors

Mobara, Japan

Katsutoshi Saito