Dow Corning Toray Silicone Company Limited

Toray Silicone Company Limited

Dow Corning Toray Company, Ltd.

Dow Corning Corporation

Katsutoshi Mine

Kimio Yamakawa

Minoru Isshiki

Kazumi Nakayoshi

Takashi Nakamura

Motoshi Sasaki

Akihiko Kobayashi

Kiyotaka Sawa

Yoshiko Otani

Rikako Tazawa

Osamu Mitani

Ryoto Shima

Hiroki Ishikawa

Yoshito Ushio

Junji Nakanishi

Tsuneo Maruyama

Yoshitsugu Morita

Hiroyoshi Naito

Takae Takeuchi

Hiroyosi Naito

Takae Ishikawa

Kazuhide Takeshita

Masuo Yokoyama

Michael A Lutz

Toshio Suzuki

Hiroji Enami

Tomoko Kato

Don Lee Kleyer

Toyohiko Fujisawa

Bernard Vanwert

Ryuzo Mikami

Hiroshi Matsuoka

Manabu Sutoh

Noriyasu Yokoyama

Tsuneo Hanada

Shinichi Sumimura

Naohiro Muramoto

Yoshitaka Kubota

Tadao Tamaki

Yoshitsuga Morita

Minoru Nishio

Satoshi Miyamae

Akemi Kogo

Hiroyuki Asai

Y C/o Dow Corning Toray Co Ltd Morita

J c/o Dow Corning Toray Co Ltd Nakanishi

H C/o Dow Corning Toray Co Ltd Enami

Yoshitsugu c/o Dow Corning Toray Co Ltd Morita

Junji c/o Dow Corning Toray Co Ltd Nakanishi

A method of manufacturing a semiconductor device sealed in a cured silicone body by placing an unsealed semiconductor device into a mold and subjecting a curable liquid silicone composition that fills the spaces between the mold and the unsealed semiconductor device to compression molding under a predetermined molding temperature, wherein said curable liquid silicone composition has viscosity of 90 Pa&#xb7;s or less at room temperature, a time interval from the moment directly after measurement of a torque with a curometer at the molding temperature to the moment when the torque reached 1 kgf&#xb7;cm is not less than 1 min., while the time interval during which the torque grows from 1 kgf&#xb7;cm to 5 kgf&#xb7;cm is not more than 1 min.

Semiconductor device and method of manufacturing thereof

A silver-based powder is surface-treated with an oxidation inhibitor by means of a mechanochemical reaction. A method of preparation of the silver-based powder includes using an organic solution of the oxidation inhibitor as a lubricating agent, applying mechanical energy to the silver-based powder, and subjecting the silver-based powder to surface treatment with said oxidation inhibitor by means of a mechanochemical reaction.

Silver-based powder, method of preparation thereof, and curable silicone composition

A method of manufacturing a semiconductor device sealed in a cured silicone body by placing a semiconductor device into a mold and subjecting a curable silicone composition that fills the spaces between said mold and said semiconductor device to compression molding, wherein the curable silicone composition comprises the following components: (A) an organopolysiloxane having at least two alkenyl groups per molecule; (B) an organopolysiloxane having at least two silicon-bonded hydrogen atoms per molecule; (C) a platinum-type catalyst; and (D) a filler, wherein either at least one of components (A) and (B) contains a T-unit siloxane and/or Q-unit siloxane. By the utilization this method, a sealed semiconductor device is free of voids in the sealing material, and a thickness of the cured silicone body can be controlled.

A silicone-based adhesive sheet has either a layer of clay-like curable silicone composition on one side and a layer of slower curing clay-like curable silicone composition than the first composition layer on the other side, or a cured silicone layer on one side and a layer of clay-like curable silicone composition on the other side. The silicone-based adhesive sheet may be used in a method for bonding semiconductor chip and a chip attachment component. A semiconductor device may be prepared by the method.

Silicone-based adhesive sheet, method of bonding a semiconductor chip to a chip attachment component, and a semiconductor device

A thermoconductive curable liquid polymer composition including (A) a curable liquid polymer, (B) a filler made from a thermally-elongatable shape-memory alloy, and (C) a thermoconductive filler other than (B). A semiconductor device having a semiconductor element glued or coated with the thermoconductive curable liquid polymer composition.

Thermoconductive curable liquid polymer composition and semiconductor device produced with the use of this composition

The electrical properties, particularly contact resistance and volume resistivity, of materials prepared by curing organosiloxane compositions containing finely divided silver as the electroconductive filler are improved by treating the silver particles with an organosilicon compound prior to incorporating the particles into the organosiloxane composition.

Silver-filled electrically conductive organosiloxane compositions

An anisotropically electroconductive adhesive film is characterized by containing an electroconductive elastomer that traverses the thickness of the adhesive film and is insulated in the plane of the adhesive film comprising electrically insulating elastomer, and both the electroconductive elastomer and the electrically insulating elastomer have a modulus of elasticity at 150&#xb0; C. that is no greater than 100 MPa. A method for producing the anisotropically electroconductive adhesive film is characterized by forming through holes across the thickness of the adhesive film comprising electrically insulating elastomer, thereafter filling the through holes with an electroconductive elastomer composition, and curing the electroconductive elastomer composition to form the electroconductive elastomer after filling the through holes. A semiconductor device characterized by the electrical connection of the terminals of a semiconductor chip to the interconnect pads of an interconnect substrate by the aforementioned anisotropically electroconductive adhesive film.

Anisotropically electroconductive adhesive film, method for the production thereof, and semiconductor devices

Alkenyl polyorganosiloxane, organohydrogensiloxane, organosilicon or silane treated silver particles and Pt catalyst

A method for forming an electrically insulating thin film coating the surface of an electronic device with an electrically insulating thin-film-forming resin composition and crosslinking the composition by a method selected from the group consisting of heating and irradiation with high-energy rays.

Method for forming thin film from electrically insulating resin composition

A silicone-based adhesive sheet prepared by a process comprising (i) curing a silicone composition to form a substantially cured product while the composition lies between backing materials, wherein at least one of the backing materials has a surface comprising oxygen atoms and/or sulfur atoms in contact with the silicone composition and the backing materials are releasable from the cured product, and (ii) separating the cured product from the backing materials. A method of manufacturing a silicone-based adhesive sheet comprising (i) curing a silicone composition to form a cured product while the composition lies between backing materials, wherein at least one of the backing materials has a surface comprising oxygen atoms and/or sulfur atoms in contact with the silicone composition and the backing materials are releasable from the cured product, and (ii) separating the cured product from the backing materials. A semiconductor device comprising a semiconductor chip, a chip attachment component, and the above-mentioned silicone-based adhesive sheet, wherein the semiconductor chip is bonded to the chip attachment component with the silicone-based adhesive sheet.

Silicone-based adhesive sheet, method for manufacturing same, and semiconductor device

An adhesive composition for bonding semiconductor chips to their chip mounting components comprising a curable polymer composition comprising from 1 to 900 weight-ppm spherical filler having an average particle size of from 10 to 100 &mgr;m and a major axis-to-minor axis ratio of from 1 to 1.5. Also, semiconductor devices in which a semiconductor chip therein is bonded to its chip mounting component by the aforesaid adhesive composition.

Adhesive and semiconductor devices

An adhesive composition for bonding of semiconductor chips to their chip mounting components comprising a curable polymer composition that comprises a spherical filler having an average particle size from greater than 100 to 1,000 &mgr;m and an aspect ratio of 1 to 1.5. Semiconductor devices according to this invention are characterized in that a semiconductor chip therein is bonded to the mounting component for said chip by the aforementioned adhesive.

A semiconductor device having a semiconductor chip; a semiconductor chip attachment element facing the semiconductor chip, at least one interconnect on the surface of the semiconductor chip attachment element; and at least one member consisting of a metal or metal alloy that electrically connects the semiconductor chip with the interconnects; wherein the semiconductor chip is bonded to the semiconductor chip attachment element by an adhesive and at least a portion of at least one member that electrically connects the semiconductor chip with at least one interconnect is sealed or imbedded with a sealant/filling agent, and the complex modulus of at least one of the adhesive and the sealant/filling agent is not greater than 1&times;10 Pa at &minus;65&deg; C. and a shear frequency of 10 Hz.

Semiconductor device having an adhesive and a sealant

Silicone-based adhesive sheet method for manufacturing same and semiconductor device

A curable organopolysiloxane composition comprises: (A) an organopolysiloxane with two or more silicon-bonded hydrogen atoms contained in one molecule in an amount not exceeding 0.05 wt. %; (B) an organopolysiloxane with two or more alkenyl groups in one molecule &lcub;alkenyl groups of this components are to be in an amount of 0.01 to 1 mole per 1 mole of a silicon-bonded hydrogen atoms contained in said component (A)&rcub;; and (C) a hydrosilylation-reaction metal catalyst (with content of metal atoms within the range of 0.01 to 1,000 ppm in terms of weight units). A method of manufacturing a semiconductor device comprises: applying onto the surface of a semiconductor device and curing, the aforementioned curable organopolysiloxane composition.

Curable organopolysiloxane composition and method of manufacturing semiconductor devices with the use of the aforementioned composition

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Chiba Prefecture, Japan

Katsutoshi Mine