Kabushiki Kaisha Toshiba

Hitachi Automotive Systems, Ltd.

Hitachi, Ltd.

East Japan Railway Company

Katsutoshi Kobayashi

Kenichiro Tokuo

Tsukasa Azuma

Daisuke Kawamura

Yoshihiro Fujii

Hitoshi Kubota

Yusuke Kasahara

Shigehiko Omata

Ayako Kawanishi

Hironobu Yamakawa

Moritsugu Akiyama

Hiroki Yonemitsu

Kenichirou Tokuo

Shigenori Tahara

Koutarou Sho

Tomoyuki Shibuya

Daisuke Akimaru

Daizo Muto

Takayuki Namiki

An object is to suppress cavitation generated at a distal end portion of a seat face when a valve body and a seat portion collide with each other. In a relief valve of a fuel pump, an intersection between the seat face and a flow channel hole is formed at a position more distant than the seat portion formed of the valve body in a valve closing state and the seat face in order to suppress generation of cavitation bubbles when the valve body improves and releases high-pressure fuel.

High-pressure fuel pump

A pattern is formed by forming a first pattern on a first film, forming a block copolymer layer including a first block chain and a second block chain on the first pattern, forming a second pattern, forming a second film on the second pattern, selectively removing the second film until the second pattern is exposed, forming a third pattern, and processing the first film using the third pattern as a mask. The second pattern is formed by microphase-separating the block copolymer layer, and removing the first block chain or the second block chain. The second film is formed by applying a material having an etch rate that is less than an etch rate of a material of the first pattern and the second pattern. The third pattern is formed by selectively removing the second pattern and the first pattern using the second film as a mask.

Pattern forming method

In a patterning method according to the present embodiment, a guide pattern is formed on a processing target film. The guide pattern is configured by concave portions and convex portions extending in a predetermined direction. A block copolymer layer is formed on the guide pattern. The block copolymer layer contains at least two block chains. A layer of microphase-separated structures is formed on the concave portions and the convex portions, respectively, by microphase-separating the block copolymer layer. The processing target film is formed into predetermined patterns by selectively removing the processing target film. At least a part of the block copolymer layer is used as a mask.

Method of patterning

According to one embodiment, a pattern forming method is disclosed. A resist pattern having a top surface is formed pattern on a substrate. A coating film having a first thickness distribution is formed on the substrate. The coating film covers the resist pattern. The coating film is thinned to expose the top surface of the resist pattern. The first thickness distribution is changed into a second thickness distribution which is more uniform than the first thickness distribution. The resist pattern is removed without removing the coating film. A pattern is formed in the substrate by processing the substrate by using the coating film as a mask.

Pattern forming method, semiconductor device manufacturing method, and coating apparatus

A method for manufacturing a semiconductor device including: forming a resist filmon a film to be processed; baking the resist film; performing immersion exposure on the resist filmafter the baking; performing post exposure bake on the resist filmafter performing the immersion exposure; developing the resist filmafter performing the post exposure bake; and after the post exposure bake is performed on the resist film, removing an edgeof the resist film, the edge not being exposed.

Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, includes: supplying a liquid resist containing a water-repellent additive to a surface of a rotating semiconductor wafer fixed to a rotary support to form a resist film to a design thickness on the surface of the semiconductor wafer; spin drying the resist film; bringing a liquid into contact with the resist film and exposing the resist film through the liquid after the spin drying; developing the resist film to form a resist pattern; and performing processing on the semiconductor wafer. A condition for adjusting contact angle between the resist film surface and the liquid is controlled so that the contact angle assumes a desired value, the condition including at least one selected from the group consisting of spin drying time for the resist film, resist temperature during the supplying, pressure of an atmosphere above the semiconductor wafer surface, and humidity of the atmosphere above the semiconductor wafer surface.

Growing community of inventors

Tokyo, Japan

Katsutoshi Kobayashi