Hosiden Corporation

Osaka Prefecture

Air Water Inc.

Other

Osaka Prefecture University Public Corporation

Katsutoshi Izumi

Keiji Mine

Yoshiaki Ohbayashi

Fumihiko Jobe

Motoi Nakao

Tomoyuki Tanaka

Seisaku Hirai

Takashi Yokoyama

Keisuke Kawamura

Hidetoshi Asamura

A single crystal SiC substrate is produced with low cost in which a polycrystalline SiC substrate with relatively low cost is used as a base material substrate where the single crystal SiC substrate has less strain, good crystallinity and large size. The method including a P-type ion introduction step for implanting P-type ions from a side of a surface Si layerinto an SOI substratein which the surface Si layerand an embedded oxide layerhaving a predetermined thickness are formed on an Si base material layerto convert the embedded oxide layerinto a PSG layerto lower a softening point, and an SiC forming step for heating the SOI substratehaving the PSG layerformed therein in an atmosphere hydrocarbon-based gas to convert the surface Si layerinto SiC, and thereafter, cooling the resulting substrate to form a single crystal SiC layeron a surface thereof.

Method for producing single crystal SiC substrate and single crystal SiC substrate produced by the same

A method including a phosphorous ion introduction step for implanting phosphorous ions from a side of a surface Si layer into an SOI substrate in which the surface Si layer and an embedded oxide layer having a predetermined thickness are formed on an Si base material layer to convert the embedded oxide layer into a PSG layer to lower a softening point. An SiC forming step is performed by heating the SOI substrate having the PSG layer formed therein in an atmosphere of hydrocarbon-based gas to convert the surface Si layer into SiC. Thereafter, the resulting substrate is cooled to form a single crystal SiC layer on a surface thereof.

In order to provide a method for manufacturing a single crystal SiC substrate that can obtain an SiC layer with good crystallinity, an Si substratehaving a surface Si layerof a predetermined thickness and an embedded insulating layeris prepared, and when the Si substrateis heated in a carbon-series gas atmosphere to convert the surface Si layerinto a single crystal SiC layer, the Si layer in the vicinity of an interfacewith the embedded insulating layeris left as a residual Si layer

Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal SiC substrate and single crystal SiC substrate

There is provided a monocrystalline gallium nitride localized substrate suitable for manufacturing electronic-optical united devices in which electronic devices and optical devices are mixedly mounted on the same silicon substrate. An area in which monocrystalline gallium nitrideis grown is locally present on a silicon substrateby forming silicon carbideon the silicon substrateto locally form the monocrystalline gallium nitrideon the above-mentioned silicon carbide. Silicon nitrideis used as a mask in forming the above-mentioned monocrystalline gallium nitride

Manufacturing method of monocrystalline gallium nitride localized substrate

A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substratewhich has a surface silicon layerof a predetermined thickness and a buried insulatorin a heating furnaceand of increasing the temperature of the atmosphere within heating furnacewhile supplying a mixed gas (G+G) of a hydrogen gas Gand of a hydrocarbon gas Ginto heating furnacethereby, of metamorphosing surface silicon layerof SOI substrateinto a single crystal silicon carbide thin film

Manufacturing apparatus for buried insulating layer-type semiconductor silicon carbide substrate

A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate, which has a surface silicon layerof a predetermined thickness and a buried insulator, in a heating furnaceand of increasing the temperature of the atmosphere within heating furnacewhile supplying a mixed gas (G+G) of a hydrogen gas Gand of a hydrocarbon gas Ginto heating furnace, thereby, of metamorphosing surface silicon layerof SOI substrateinto a single crystal silicon carbide thin film

Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate

Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.

Manufacturing device for buried insulating layer type single crystal silicon carbide substrate

Method for manufacturing buried insulating layer type single crystal silicon carbide substrate

To economically and easily fabricate a single crystal silicon carbide thin film. The apparatus for fabricating a single crystal silicon carbide thin film comprises a film-formation chamber adapted to receive a SOI substrate for film-formation, a gas supply means for supplying various gases G to G necessary to fabricate a single crystal silicon carbide thin film to the film-formation chamber , a gas treatment means for treating argon gas as an inert gas G , propane gas as a hydrocarbon-based gas G , hydrogen gas as a carrier gas, and oxygen gas G supplied to the film-formation chamber , and a temperature control means for controlling the temperature of the film-formation chamber

Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same

The present invention relates to etching for removing a carbon thin film formed on a surface of a sample, to prevent a damage on a sample and eliminate the necessity of providing a special device (such as vacuum pump) as is required in plasma etching. A sealed reaction chamber A in which a sample formed with a carbon thin film on its surface is to be set, a gas feed means A for feeding argon gas which is an inert gas Ar into which a predetermined proportion of oxygen gas O has been mixed from one end to the interior of the reaction chamber A, an exhaust means A for discharging carbon dioxide gas CO from the downstream side of the inert gas Ar fed from the gas feed means A, and a heating means A for heating the sample to 550&deg; C. or higher are provided.

Growing community of inventors

Sakai, Japan

Katsutoshi Izumi