Tokyo Electron Limited

Other

Tokyo Electron Limi Ted

Tokyo Electron Sagami Limited

Tokyo Elctron Limited

Katsutoshi Ishii

Hiroyuki Matsuura

Kazutoshi Miura

Yutaka Takahashi

Hitoshi Kato

Hiroyuki Yamamoto

Takanobu Asano

Harunari Hasegawa

George Hoshi

Takanori Saito

Kenichi Yamaga

Jun Sato

Akinobu Teramoto

Yamato Tonegawa

Eiichi Toya

Masahisa Watanabe

Toshiharu Nishimura

Akira Shimizu

Hiroyuki Iwai

Toshiki Takahashi

Seungho Oh

Katsuyoshi Aikawa

Tomio Konn

Tetsuya Shibata

Tomohiro Nagata

Sunao Seko

Tomoyuki Suwa

Yoshinobu Shiba

Mitsuo Mizukami

Joji Hoshi

Naotaka Ogino

Isao Hagino

A gas introduction structure includes: a gas introduction pipe inserted in a process chamber; and a discharge part covering an end portion of the gas introduction pipe at a side of the process chamber, and configured to discharge a gas supplied to the gas introduction pipe into the process chamber, wherein the discharge part includes a porous portion formed of a porous body, and a dense portion disposed at a location closer to a leading end of the discharge part than the porous portion and having a porosity lower than that of the porous portion.

Gas introduction structure, treatment apparatus, and treatment method

A substrate processing apparatus includes a processing container configured to accommodate and process a substrate, an exhaust pipe connected to the processing container, an evacuation part configured to evacuate an interior of the processing container via the exhaust pipe, an exhaust pipe coating gas nozzle provided in the vicinity of the exhaust pipe inside the processing container and configured to supply at least one of a silicon-containing gas and an oxidizing gas into the exhaust pipe via the processing container, and a heating part configured to heat the processing container.

Substrate processing apparatus, exhaust pipe coating method and substrate processing method

There is provided a substrate processing apparatus that includes: a process chamber in which a substrate is accommodated to be processed; a plurality of quartz gas nozzles configured to supply, into the process chamber, a plurality of process gasses capable of generating reaction products by reacting the plurality of process gasses with each other; an evacuation device configured to evacuate an interior portion of the process chamber; a bypass pipe configured to connect a quartz gas nozzle among the plurality of quartz gas nozzles to the evacuation device; and a coating gas nozzle configured to supply at least one of a silicon-containing gas and an oxidizing gas capable of forming a SiOcoating film inside the quartz gas nozzle connected to the evacuation device in a state in which the inside of the quartz gas nozzle connected to the evacuation device is evacuated by the evacuation device.

Substrate processing apparatus, method of coating particle in process gas nozzle and substrate processing method

There is provided a film forming apparatus for forming a silicon nitride film on a substrate by having a precursor gas containing silicon to react with a reaction gas containing nitrogen, including: a processing container configured to form a vacuum atmosphere; a substrate mounting part installed in the processing container; a precursor gas supply part configured to supply a precursor gas into the processing container; a reaction gas supply part configured to supply a reaction gas containing nitrogen into the processing container; and an ultraviolet irradiating part configured to excite the reaction gas before the reaction gas reacts with the precursor gas, wherein a substrate on the substrate mounting part is not irradiated with an ultraviolet ray emitted from the ultraviolet irradiating part.

Film forming apparatus and film forming method

A film forming apparatus includes a first supply unit configured to supply a first reaction gas into the reaction vessel under an environment of a first pressure, a second supply unit configured to supply a second reaction gas into the reaction vessel under an environment of a second pressure lower than the first pressure, a first vacuum exhaust mechanism connected to the reaction vessel through a first exhaust path in order to create the environment of the first pressure within the reaction vessel, a second vacuum exhaust mechanism connected to the reaction vessel through a second exhaust path in order to create the environment of the second pressure, the second vacuum exhaust mechanism being lower in an operation pressure zone than the first vacuum exhaust mechanism, and a switching unit configured to switch exhaust destinations of the reaction vessel between the first path and the second path.

Film forming apparatus, film forming method and non-transitory storage medium

A method for using a heat processing apparatus of a batch type includes performing a preparatory process for removing aluminum present as a metal impurity from a quartz inner surface of a process container, and performing a main heat process on product substrates held on a holder member in the process container after the preparatory process. The preparatory process includes placing a plurality of dummy substrates for allowing the metal impurity to be deposited thereon inside a process container with no product substrates placed therein; then, supplying a chlorine-containing gas and water vapor into the process container and heating the quartz inner surface of the process container at a process temperature, thereby applying a baking process onto the quartz inner surface to discharge the metal impurity from the quartz inner surface and deposit the metal impurity onto the dummy substrates; and then, unloading the dummy substrates with the metal impurity deposited thereon from the reaction container.

Method for removing metal impurity from quartz component part used in heat processing apparatus of batch type

A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.

Vertical plasma processing apparatus for semiconductor process

RF electrode for a process tube of semiconductor manufacturing apparatus

Disclosed herein is a silicon dioxide film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas pretreating step of energizing a process gas to produce water, the process gas including hydrogen, chlorine, and oxygen gas; and a film forming step of forming a silicon dioxide film by supplying the the process gas that has been energized to produce water into the heated reaction chamber to oxidize the silicon layer of the object to be processed.

Silicon dioxide film forming method

Process tube for semiconductor device manufacturing apparatus

A supply system in a heat-treating apparatus for a semiconductor process has a combustor (), heating unit (), and gas distributor (). The combustor () has a combustion chamber () disposed outside a process chamber (). The combustor () generates water vapor by reaction of hydrogen gas and oxygen gas in the combustion chamber (), and supplies it to the process chamber (). The heating unit () has a heating chamber () disposed outside the process chamber (). The heating unit () selectively heats a gas not passing through the combustion chamber () to a temperature not lower than an activating temperature of the gas, and supplies it to the process chamber (). The gas distributor () selectively supplies the hydrogen gas and oxygen gas to the combustion chamber (), and selectively supplies a reactive gas and inactive gas to the heating chamber ().

System and method for heat treating semiconductor

This invention is an oxynitride film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas heating step of heating a process gas to a temperature not lower than a reaction temperature at which an oxynitride film can be formed, the process gas consisting of dinitrogen oxide gas; and a film forming step of forming an oxynitride film on the object to be processed by supplying the heated process gas into the heated processing chamber. The temperature to which the reaction chamber is heated in the reaction chamber heating step is set at a temperature below a temperature at which the process gas undergoes a reaction.

Method of forming oxynitride film or the like and system for carrying out the same

The present invention relates generally to a heat treatment system and method for heat-treating an object to be treated. Particularly, the invention relates to a heat treatment system wherein an object to be treated is carried in a reaction vessel, which has been pressure-reduced to a predetermined degree of vacuum and the interior of which is heated to a predetermined process temperature, and a process gas is supplied into the reaction vessel via a gas feed passage to process the object.

Heat treatment system and method

Growing community of inventors

Shiroyama-Machi, Japan

Katsutoshi Ishii