Tokyo Electron Limited

Katsusuke Shimizu

Takayuki Niuya

Yoshinori Marumo

Kyungho Park

Michihiro Ono

Hideto Goto

The object of the present invention is to provide a plating method capable of planarization process of high quality in comparison with the conventional plating method and also provide a plating device and a plating system adopting the plating method of the invention. In the plating method and device, an object to be processed and an electrode plate are dipped in a solution including objective metal ions and a forward current is supplied between the object and the electrode plate to educe a metal on the surface of the object. After forming a plating film on the object excessively, a backward current is supplied between the object and the electrode to uniformly remove at least part of superfluous plating film.

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Tokyo-to, Japan

Katsusuke Shimizu