Tokyo Electron Limited

Fuji Electric Co., Ltd.

Osaka University

Tohoku University

Katsushige Harada

Yuichiro Morozumi

Shingo Hishiya

Shigeru Nakajima

Kazuhide Hasebe

Takuya Sugawara

Yu Wamura

Yoshihiro Takezawa

Haruhiko Furuya

Tomonori Fujiwara

Dong-Kyun Choi

Yoshihiro Ishida

Tadahiro Ohmi

Atsushi Endo

Heiji Watanabe

Takayoshi Shimura

Takuji Hosoi

Akinobu Teramoto

Hirokazu Ueda

Koji Akiyama

Shuji Azumo

Hiroshi Kambayashi

Yusaku Kashiwagi

Tsuyoshi Mizuno

Hiromitsu Namba

Takahito Umehara

Kosuke Takahashi

Kazuo Yabe

Fumiaki Hayase

Yusuke Tachino

Hirotake Fujita

Susumu Takada

There is provided a metal contamination prevention method performed by passing a metal chloride gas through a metal component having a surface covered with an inactive film formed of a chromium oxide, the method including: generating a chromium chloride (III) hexahydrate by supplying a hydrochloric acid to the inactive film covering the surface of the metal component and allowing the chromium oxide to react with the hydrochloric acid; removing a chromium from the inactive film by evaporating the chromium chloride (III) hexahydrate; and covering a surface of the inactive film with a compound containing a metal contained in the metal chloride gas.

Metal contamination prevention method and apparatus, and substrate processing method using the same and apparatus therefor

A method and apparatus of forming a thin film using an organic metal compound gas and oxidizing agents are disclosed. The method includes performing a first film formation process of forming a thin film on an object to be processed using an organic metal compound gas and a first oxidizing agent; performing an annealing process of supplying a second oxidizing agent having stronger oxidizing power than the first oxidizing agent into the reaction chamber while an interior of the reaction chamber is heated to a predetermined temperature; and performing a second film formation process of forming a thin film on the thin film formed in the first thin film formation process using the organic metal compound gas and the second oxidizing agent.

Method and apparatus for forming thin film

Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.

Film forming method and film forming apparatus

Provided is a method of forming a film of metal compound of first and second materials on an object to be processed, one of the first and second materials being metal, which includes: supplying a raw material gas containing the first material to the object such that the first material is adsorbed onto the object; supplying a raw material gas containing the second material to the object with the first material adsorbed thereon such that the second material is adsorbed onto the object with the first material adsorbed thereon; and supplying a third material different from the first and second materials onto the first and second materials adsorbed onto the object such that the first to third materials are chemically combined with one another.

Method and apparatus of forming metal compound film, and electronic product

A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiOfilm and an AlOfilm is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.

Method for fabricating semiconductor device and the semiconductor device

Provided are a method of manufacturing a capacitor capable of achieving a high dielectric constant property and a low leakage current, a capacitor, and a method of forming a dielectric film used in the capacitor. The capacitor is fabricated by forming a lower electrode layer on a substrate; forming a first TiOfilm having an interface control function on the lower electrode layer; forming a ZrO-based film on the first TiOfilm; performing an annealing process for crystallizing ZrOin the ZrO-based film, after forming the ZrO-based film; forming a second TiOfilm which serves as a capacity film on the ZrO-based film; and forming an upper electrode layer on the second TiOfilm.

Method of manufacturing capacitor, capacitor and method of forming dielectric film for use in capacitor

Disclosed is a method for processing a substrate including a first process and a second process. The first process comprises supporting the substrate formed with a titanium-containing film on its front surface and rear surface by a support unit which is rotatably installed; rotating the substrate along with the support unit; and supplying a first processing liquid containing hydrofluoric acid to the rear surface of the substrate thereby processing the rear surface of the substrate with the first processing liquid. The second process comprises supplying a second processing liquid containing ammonia hydrogen peroxide mixture to the rear surface of the substrate after the first process is completed, thereby processing the rear surface of the substrate with the second processing liquid.

Liquid processing method, recording medium having recorded program for executing liquid processing method therein and liquid processing apparatus

According to the method of forming a titanium nitride film, first, an inside of a reaction pipe accommodating a semiconductor wafer is heated up to 200&#xb0; C. to 350&#xb0; C. by using a temperature increasing heater. Then, the titanium nitride film is formed on the semiconductor wafer by supplying a film forming gas including a titanium raw material into the reaction pipe. Methylcyclopentadienyl tris(dimethylamino)titanium that does not include a chlorine atom and includes titanium is used as the titanium raw material.

Method of forming titanium nitride film

When an object to be processed is transferred into a process chamber capable of keeping a vacuum and an interior of the process chamber is kept in a vacuum state, the film formation method includes performing forming a first ZrO film on the object to be processed by supplying a zirconium material and an oxidizing agent in the order listed above into the process chamber and forming a second ZrO film doped with Si on the object to be processed by supplying the zirconium material, a silicon material, and the oxidizing agent in the order listed above into the process chamber, in such a way that a number of times the forming the first ZrO film is performed and a number of times the forming the second ZrO film is performed are adjusted, respectively, to form a zirconia-based film having a predetermined film thickness while controlling a Si concentration in the film.

Film formation method and film formation apparatus

The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrOfilm on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiOfilm on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrOfilm forming sequences and the SiOfilm forming sequences are repeated for the adjusted number of times of performances.

Film forming apparatus

A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containing hydrogen fluoride into the reaction chamber, and forming a first atmosphere within the reaction chamber, which allows water to be present as a liquid film.

Film formation apparatus and method of using the same

In a capacitor of an MIM (Metal-Insulator-Metal) structure, a silicon-containing high dielectric film (e.g., a hafnium silicate film) containing a silicon atom, as well as a silicon-free high dielectric film (e.g., a tantalum oxide film) containing no silicon atom is interposed between a lower electrode film and an upper electrode film which are made of metal or metal compound. By adding the silicon-containing high dielectric film, a leak current can be suppressed and the change in capacitor capacity accompanied with the change in applied voltage can be reduced.

Film forming method for depositing a plurality of high-k dielectric films

Growing community of inventors

Nirasaki, Japan

Katsushige Harada