Samsung Display Co., Ltd.

Katsushi Kishimoto

Takayuki Fukasawa

Yeon Keon Moon

Sang Won Shin

Sang Woo Sohn

Sang-Won Shin

Yeon-Keon Moon

Sang-Woo Sohn

Yoon Ho Kang

Dong Hoon Kwak

Yoshinori Tanaka

Atsushi Kitabayashi

Jae Kwon Hwang

Hyunsuk Park

An organic light-emitting display apparatus includes: a first pixel electrode; a second pixel electrode spaced apart from the first pixel electrode and comprising a top surface that is flatter than a top surface of the first pixel electrode; a first color emission layer on the first pixel electrode; and a second color emission layer on the second pixel electrode and configured to emit light having a wavelength longer than a wavelength of light emitted by the first color emission layer.

Organic light-emitting display apparatus having pixel electrodes with varying flatness

A bake system may include a chamber having an internal space, a stage disposed in the internal space of the chamber and on which a target substrate is disposed, a gas ejection structure providing a process gas in the chamber, an exhaust structure, an atmosphere analyzer monitoring moisture and oxygen in the chamber, and a gas supplier controlling a flow rate of the process gas based on information provided from the atmosphere analyzer. The exhaust structure may include a suction part disposed in the internal space, and an exhaust part connected to the suction part and is disposed outside the chamber.

Bake system and method of fabricating display device using the same

An organic light-emitting device including an anode electrode, a hole injection layer on the anode electrode, a hole transport layer on the hole injection layer, an emissive layer on the hole transport layer, and a cathode electrode on the emissive layer. A material of the hole injection layer includes a nitrogen-containing compound having a quinoid structure and a nitrogen-containing compound having a benzenoid structure. A ratio of a peak intensity Ito a peak intensity I(I/I) in a Fourier transform infrared spectroscopy (FTIR) spectrum of the material of the hole injection layer ranges from 1.5 to 2.5, the peak intensity Iand the peak intensity Ibeing further defined.

Organic light emitting device and method of manufacturing the same

A method of manufacturing a film includes disposing a substrate under one side of a baffle plate in a film manufacturing space, the baffle plate having a plurality of through-holes, and spraying an inert gas toward the substrate through a plurality of nozzle tips branched from a gas distribution pipe that is disposed over an other side of the baffle plate such that the inert gas penetrates the baffle plate through the through-holes.

Vacuum drying apparatus and method of manufacturing film using the same

An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.

Oxide sputtering target, and thin film transistor using the same

A thin-film transistor, including a substrate; an active layer on the substrate; a gate electrode on the active layer; and a gate insulating layer between the active layer and the gate electrode, the active layer including a channel region; source and drain regions at opposite sides of the channel region; and lightly doped regions between the channel region and the source region and between the channel region and the drain region, the source and drain regions being doped with a first element, and the lightly doped regions being doped with a second element different from the first element.

Thin-film transistor with crystallized active layer, method of manufacturing the same, and organic light-emitting display device including the same

A method of manufacturing a light-emitting display device, the method including forming a first electrode on a substrate for each pixel of a plurality of pixels; forming a pixel defining film on the first electrode such that the pixel defining film includes an opening exposing the first electrode; and forming an organic layer on the first electrode, wherein forming the organic layer includes providing an organic solution into the opening of the pixel defining film, and drying the organic solution by performing an exhaust process in a state where an air current is provided by using a drying gas such that the air current is sequentially composed of a position facing the organic solution, a position to which the organic solution is discharged, and a position facing the organic solution.

Method of manufacturing light-emitting display device with reduced pressure drying

A thin film transistor array panel includes a substrate and a gate line disposed on the substrate. The gate line includes a gate electrode. A gate insulating layer is disposed on the gate line. An oxide semiconductor layer is disposed on the gate insulating layer. The oxide semiconductor layer at least partially overlaps the gate electrode. A data line is disposed on the oxide semiconductor layer. The data line includes a source electrode and a drain electrode facing the source electrode. The oxide semiconductor layer includes tungsten, indium, zinc, or tin.

Thin film transistor array panel and manufacturing method thereof

An oxide semiconductor depositing apparatus includes a heating chamber which is configured to heat and plasma-treat a first substrate including an insulation layer, and includes a chamber body, a heater disposed in the chamber body which is configured to heat the first substrate, and a cathode plate spaced apart from the heater, a high frequency voltage applied to the cathode plate, and a first process chamber which is configured to provide an oxide semiconductor layer on the insulation layer of the first substrate.

Oxide semiconductor depositing apparatus and method of manufacturing oxide semiconductor using the same

A sputtering device and a gas supply pipe for a sputter device are disclosed. In one aspect, the sputtering device includes a chamber, a stage located in the chamber and configured to receive a substrate thereon, and a plurality of gas supply pipes arranged substantially parallel to each other. The gas supply pipes have a plurality of gas supply holes and the gas supply pipes are configured to supply gas into the chamber. The sputtering device further includes at least one exhaust pump placed at a side of the chamber, wherein the exhaust pump is substantially symmetrically arranged with respect to a center axis of the side of the chamber.

Sputtering device and gas supply pipe for sputtering device

A thin film transistor includes a gate electrode, a source electrode, a drain electrode disposed on the same layer as the source electrode and facing the source electrode, an oxide semiconductor layer disposed between the gate electrode and the source electrode or the drain electrode, and a gate insulating layer disposed between the gate electrode and the source electrode or the drain electrode, in which the oxide semiconductor layer includes thallium and at least one of indium, zinc, tin, and gallium. Also an oxide sputtering target including: an oxide including thallium (Tl); and at least one of indium, zinc, tin, and gallium.

Oxide sputtering target, thin film transistor using the same, and method for manufacturing thin film transistor

Disclosed is an apparatus for transferring substrates capable of stably transferring substrates by using magnetic levitation. The apparatus includes a substrate stage including a substrate loading unit, a first guide block disposed at a first end of the substrate stage and including a first magnet generator, a second guide block disposed at a second end of the substrate stage and including a second magnet generator, a first guide rail accommodating the first magnet generator and including a third magnet generator, and a second guide rail accommodating the second magnet generator and including a fourth magnet generator. The first magnet generator and the third magnet generator exert repulsive force on each other, and the second magnet generator and the fourth magnet generator exert repulsive force on each other.

Growing community of inventors

Hwaseong-si, South Korea

Katsushi Kishimoto