Sumitomo Electric Industries, Limited

Riken Corporation

Koha Co., Ltd.

Katsushi Akita

Takashi Kyono

Yusuke Yoshizumi

Masaki Ueno

Yohei Enya

Takamichi Sumitomo

Takao Nakamura

Kei Fujii

Youichi Nagai

Takashi Ishizuka

Hideaki Nakahata

Masahiro Adachi

Koji Katayama

Shinji Tokuyama

Kensaku Motoki

Hiroshi Inada

Yasuhiro Iguchi

Hideki Hirayama

Takatoshi Ikegami

Hitoshi Kasai

Shin Hashimoto

Kaoru Shibata

Susumu Yoshimoto

Suguru Arikata

Makoto Kiyama

Yoshiki Miura

Keiji Ishibashi

Shinsuke Fujiwara

Koji Uematsu

Takashi Sakurada

Tatsuya Tanabe

Takuma Fuyuki

Koji Nishizuka

Ayako Ikeda

Akihiro Hachigo

Hiroshi Amano

Akinori Koukitu

Mitsuru Shimazu

Hideki Osada

Kouhei Miura

Hisashi Seki

Masato Matsushima

Kikurou Takemoto

Seiji Nakahata

Yoshiyuki Yamamoto

Hiroki Mori

Takuji Okahisa

Hiroyuki Kitabayashi

Hiroshi Fukunaga

Masahiro Nakayama

Eiryo Takasuka

Yukio Ishikawa

Masashi Yamashita

Masaaki Kuzuhara

Norimasa Yafune

In a gallium arsenide crystal body, an etching pit density of the gallium arsenide crystal body is more than or equal to 10 cmand less than or equal to 10000 cm, and an oxygen concentration of the gallium arsenide crystal body is less than 7.0&#xd7;10atoms&#xb7;cm. In a gallium arsenide crystal substrate, an etching pit density of the gallium arsenide crystal substrate is more than or equal to 10 cmand less than or equal to 10000 cm, and an oxygen concentration of the gallium arsenide crystal substrate is less than 7.0&#xd7;10atoms&#xb7;cm.

Gallium arsenide crystal body and gallium arsenide crystal substrate

A semiconductor stacked body includes: a first semiconductor layer containing a group III-V compound semiconductor and being a layer whose conductivity type is a first conductivity type; a quantum-well light-receiving layer containing a group III-V compound semiconductor; a second semiconductor layer containing a group III-V compound semiconductor; and a third semiconductor layer containing a group III-V compound semiconductor and being a layer whose conductivity type is a second conductivity type. The first semiconductor layer, the quantum-well light-receiving layer, the second semiconductor layer, and the third semiconductor layer are stacked in this order. The concentration of an impurity that generates a carrier of the second conductivity type is 1&#xd7;10cmor more and 1&#xd7;10cmor less in the second semiconductor layer.

Semiconductor stacked body, light-receiving element, and method for producing semiconductor stacked body

A semiconductor layer includes a first semiconductor layer containing a III-V group compound semiconductor and having a first conductivity type, a quantum-well structure containing a III-V group compound semiconductor, a second semiconductor layer containing a III-V group compound semiconductor, a third semiconductor layer containing a III-V group compound semiconductor, and a fourth semiconductor layer containing a III-V group compound semiconductor and having a second conductivity type different from the first conductivity type. The first semiconductor layer, the quantum-well structure, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer are stacked in this order. The concentration of an impurity that generates carriers of the second conductivity type is lower in the third semiconductor layer than in the fourth semiconductor layer. The concentration of an impurity that generates majority carriers in the second semiconductor layer is lower in the third semiconductor layer than in the second semiconductor layer.

Semiconductor laminate and light-receiving element

A semiconductor stack includes a first-conductivity-type layer of a first conductivity type, the first-conductivity-type layer being formed of a III-V compound semiconductor; a quantum well light-receiving layer formed of a III-V compound semiconductor; and a second-conductivity-type layer of a second conductivity type different from the first conductivity type, the second-conductivity-type layer being formed of a III-V compound semiconductor. The first-conductivity-type layer, the quantum well light-receiving layer, and the second-conductivity-type layer are stacked in this order. The quantum well light-receiving layer has a thickness of 0.5 &#x3bc;m or more. The quantum well light-receiving layer has a carrier concentration of 1&#xd7;10cmor less.

Semiconductor stack, light-receiving device, and method for producing semiconductor stack

A semiconductor stack includes a substrate composed of a III-V group compound semiconductor, a buffer layer that is arranged on the substrate and that is composed of a III-V group compound semiconductor, and an active layer that is arranged on the buffer layer and that includes a layer composed of a III-V group compound semiconductor containing Sb as a group V element. A region of the buffer layer including a main surface of the buffer layer adjacent to the substrate includes a high-concentration region having a high total concentration of Si and C compared with another adjacent region.

Semiconductor stack and semiconductor device

A semiconductor layered structure includes a substrate formed of a III-V compound semiconductor, a buffer layer disposed on and in contact with the substrate and formed of a III-V compound semiconductor, and a quantum well layer disposed on and in contact with the buffer layer and including a plurality of component layers formed of III-V compound semiconductors. The substrate has a diameter of 55 mm or more. At least one of the component layers is formed of a mixed crystal of three or more elements. When the compound semiconductor forming the substrate has a lattice constant d, the compound semiconductor forming the buffer layer has a lattice constant d, and the compound semiconductors forming the quantum well layer have an average lattice constant d, (d&#x2212;d)/dis &#x2212;3&#xd7;10or more and 3&#xd7;10or less, and (d&#x2212;d)/dis &#x2212;3&#xd7;10or more and 3&#xd7;10or less.

Semiconductor layered structure, method for producing semiconductor layered structure, and method for producing semiconductor device

Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor deviceincludes an absorption layerof a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate, and an InP contact layerlocated on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z&#x2267;&#x2212;0.4x+24.6 is satisfied.

Semiconductor device, optical sensor device and semiconductor device manufacturing method

An epitaxial wafer which allows manufacture of a photodiode having suppressed dark current and ensured sensitivity, and a method for manufacturing the epitaxial wafer, are provided. The epitaxial wafer of the present invention includes: a III-V semiconductor substrate; and a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a first layer and a second layer. The total concentration of elements contained as impurities in the multiple quantum well structure is less than or equal to 5&#xd7;10cm.

Epitaxial wafer and method for manufacturing same

An epitaxial wafer of the present invention includes a substrate composed of a III-V compound semiconductor, a multiple quantum well structure composed of a III-V compound semiconductor and located on the substrate, and a top layer composed of a III-V compound semiconductor and located on the multiple quantum well structure. The substrate has a plane orientation of (100) and an off angle of &#x2212;0.030&#xb0; or more and +0.030&#xb0; or less, and a surface of the top layer has a root-mean-square roughness of less than 10 nm.

Epitaxial wafer, method for producing the same, semiconductor element, and optical sensor device

A semiconductor device and the like having high quantum efficiency or high sensitivity in a near-infrared to infrared region is provided. The semiconductor device includes: a substrate; a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a layer a and a layer b; and a crystal-adjusting layer disposed between the substrate and the multiple quantum well structure. The crystal-adjusting layer includes a first adjusting layer which is made of the same material as the substrate and is in contact with the substrate, and a second adjusting layer which is made of the same material as the layer a or the layer b of the multiple quantum well structure and is in contact with the multiple quantum well structure.

Semiconductor device and method for manufacturing the same

A method for producing a semiconductor element includes a step of forming a multiple quantum well in which a GaSb layer and an InAs layer are alternately stacked on a GaSb substrate by MOVPE, wherein, in the step of forming a multiple quantum well, an InSb film is formed on at least one of a lower-surface side and an upper-surface side of the InAs layer so as to be in contact with the InAs layer.

Semiconductor element and method for producing the same

An infrared photodiode that is a semiconductor device includes a substrate, a buffer layer formed of GaSb, and an absorption layer including a multiple quantum well structure. The multiple quantum well structure includes a stack of unit structures each including a plurality of component layers. Each unit structure includes a first component layer formed of InAsSbwhere the ratio a is 0 or more and 0.05 or less, a second component layer formed of GaSb, and a third component layer formed of InSbAswhere the ratio x is more than 0 and less than 1. The third component layer is disposed so as to be in contact with one main surface of the second component layer. The other main surface of the second component layer is in contact with the first component layer within the unit structure. The third component layer has a thickness of 0.1 nm or more and 0.9 nm or less.

Semiconductor device

A photodiode and the like capable of preventing the responsivity on the short wavelength side from deteriorating while totally improving the responsivity in a type II MQW structure, is provided. The photodiode is formed on a group III-V compound semiconductor substrate, and includes a pixel. The photodiode includes an absorption layer of a type II MQW structure, which is located on the substrate. The MQW structure includes fifty or more pairs of two different types of group III-V compound semiconductor layers. The thickness of one of the two different types of group III-V compound semiconductor layers, which layer has a higher potential of a valence band, is thinner than the thickness of the other layer.

Photodiode, optical sensor device, and photodiode manufacturing method

A method for producing an epitaxial wafer includes a step of growing an epitaxial layer structure on a III-V semiconductor substrate, the epitaxial layer structure including a III-V semiconductor multiple-quantum well and a III-V semiconductor surface layer, wherein the step of growing the epitaxial layer structure on the substrate is performed such that a lattice mismatch &#x394;&#x3c9; of the multiple-quantum well with respect to the substrate satisfies a range of &#x2212;0.13%&#x2266;&#x394;&#x3c9;&#x3c;0% or 0%&#x3c;&#x394;&#x3c9;&#x2266;+0.13%, the range having a center displaced from zero, and an X-ray rocking curve in a zero-order diffraction peak derived from the multiple-quantum well has a full width at half maximum (FWHM) of 30 seconds or less.

Epitaxial wafer, method for producing the same, photodiode, and optical sensor device

An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layergrown on the absorption layercontains antimony as impurity, due to the memory effect with antimony which is supplied during the growth of a GaAsSb layer of the absorption layer. In the group III-V compound semiconductor photo detector, the InP layercontains antimony as impurity and is doped with silicon as n-type dopant. Although antimony impurities in the InP layergenerate holes, the silicon contained in the InP layercompensates for the generated carriers. As a result, the second portionof the InP layerhas sufficient n-type conductivity.

Group III-V compound semiconductor photo detector, method of fabricating group III-V compound semiconductor photo detector, photo detector, and epitaxial wafer

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Itami, Japan

Katsushi Akita