Hitachi High-Tech Corporation

Katsura Takaguchi

Natsuki Tsuno

Toshihide Agemura

Masahiro Sasajima

Muneyuki Fukuda

Yohei Nakamura

Heita Kimizuka

An object of the invention is to provide a charged particle beam device capable of specifying an irradiation position of light on a sample when there is no mechanism for forming an image of backscattered electrons. The charged particle beam device according to the invention determines whether an irradiation position of a primary charged particle beam and an irradiation position of light match based on a difference between a first observation image acquired when the sample is irradiated with only the primary charged particle beam and a second observation image acquired when sample is irradiated with the light in addition to the primary charged particle beam. It is determined whether the irradiation position of the primary charged particle beam and the irradiation position of the light match using the first observation image and a measurement result by a light amount measuring device.

Charged particle beam device

The purpose of the present disclosure is to propose a charged particle beam device capable of allowing specifying of a distance between irradiation points for a pulsed beam and a time between irradiation points. Proposed is a charged particle beam device equipped with a beam column which has a scanning deflector for sweeping a beam and directs the beam swept by the scanning deflector onto a sample in pulses, wherein: the distance between irradiation points of the pulsed beam is set such that feature quantities of one or more specific regions of an image obtained on the basis of an output of a detector satisfy a predetermined state; the duration of time between irradiation points for the pulsed beam is changed when in a state in which the set distance between irradiation points is set or in a state in which multiple distances between irradiation points determined on the basis of the specified distance between irradiation points are set; and the beam emission is carried out according to the duration of time between irradiation points whereby the feature quantities of the multiple specific regions of the image obtained on the basis of the output of the detector satisfy the predetermined state.

Method for determining irradiation conditions for charged particle beam device and charged particle beam device

A charged particle beam apparatus includes: an electromagnetic wave generation sourcethat generates an electromagnetic wave with which a sample is irradiated; a charged particle optical system that includes a pulsing mechanismand irradiates the sample with a focused charged particle beam; a detectorthat detects an emitted electron emitted by an interaction between the charged particle beam and the sample; a first irradiation control unitthat controls the electromagnetic wave generation source and irradiates the sample with a pulsed electromagnetic wave to generate an excited carrier; a second irradiation control unitthat controls the pulsing mechanism and irradiates an electromagnetic wave irradiation region of the sample with a pulsed charged particle beam; and a timing control unit. While the emitted electrons are detected by the detector in synchronization with irradiation of the pulsed charged particle beam, the timing control unit controls the first irradiation control unit and the second irradiation control unit, and controls an interval time between the pulsed electromagnetic wave and the pulsed charged particle beam to the electromagnetic wave irradiation region. As a result, based on a transient change in an electron emission amount, it is possible to detect sample information with nano spatial resolution.

Growing community of inventors

Tokyo, Japan

Katsura Takaguchi