Konica-minolta Holdings, Inc.

Konica Corporation

Katsura Hirai

Hiroshi Kita

Tatsuo Tanaka

Chiyoko Takemura

Rie Katakura

Yasuo Kojima

Makoto Honda

Kiyoshi Goto

Mitsuhiro Fukuda

Reiko Obuchi

Takahiro Mori

Ryoji Hattori

Shigehiro Kitamura

Hiroaki Arita

Tatsuichi Maehashi

Hideki Takiguchi

Naoto Yamamoto

Kiyoshi Fukusaka

Toshiya Eguchi

Kazuyuki Nishio

Io Mizushima

Junko Honda

Atsuko Matsuda

Noriyuki Kizu

Satoshi Funayama

An organic thin film transistor comprising a semiconductor layer containing a thiophene oligomer which has a thiophene ring having a substituent and a partial structure constituted by directly connected two or more thiophene rings each having no substituent, and contains three to forty thiophene rings per molecule.

Organic thin film transistor

A method for forming an organic semiconductor film having a high carrier mobility is provided by having an average volatilization rate of a solvent within a prescribed range during a step of drying, at the time of applying a coating solution, which includes an organic semiconductor material and a non-halogen solvent, on a substrate. In such forming method, characteristic fluctuation in repeated use of the organic semiconductor film is suppressed, and an organic thin film transistor having an excellent film forming characteristic even on an insulator with reduced gate voltage threshold can be obtained.

Organic semiconductor film forming method, organic semiconductor film and organic thin film transistor

A method of fabricating an organic thin film transistor exhibiting excellent semiconductor performance by which an organic TFT can be formed continuously on a flexible base such as a polymer support through a simple coating process, and thus the fabrication cost can be reduced sharply, and an organic semiconductor layer thus formed has a high carrier mobility, In the method of fabricating an organic thin film transistor by forming a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode sequentially on a support, the organic semiconductor layer contains an organic semiconductor material having an exothermic point and an endothermic point in a differential scanning thermal analysis, and the organic semiconductor layer thus formed is heat-treated at a temperature not less than the exothermic point and less than the endothermic point.

Method of manufacturing organic film transistor

A method of manufacturing an electronic device comprising the subsequent steps of: providing a thermal conversion material or an area comprising the thermal conversion material and, in an adjoining area or in a vicinity of the thermal conversion material or the area comprising the thermal conversion material, a material having an electromagnetic wave absorbing function or an area comprising the material having the electromagnetic wave absorbing function, in at least a portion on a substrate; and irradiating the substrate with an electromagnetic wave to transform the thermal conversion material into a functional material using a heat generated by the material having the electromagnetic wave absorbing function.

Electronic device and method of manufacturing the same

A method of manufacturing a metal oxide semiconductor comprising the step of: conducting a transformation treatment on a semiconductor precursor layer containing a metal salt to form the metal oxide semiconductor, wherein the metal salt comprises one or more metal salts selected from the group consisting of a nitrate, a sulfate, a phosphate, a carbonate, an acetate and an oxalate of a metal; and the semiconductor precursor layer is formed by coating a solution of the metal salt.

Metal oxide semiconductor, semiconductor element, thin film transistor and method of manufacturing thereof

An electrical circuit containing a substrate having thereon a receptive layer, wherein the receptive layer has a conductive polymer impregnated in the receptive layer, and a method for forming the electrical circuit.

Electrical circuit, thin film transistor, method for manufacturing electric circuit and method for manufacturing thin film transistor

Disclosed is a method for manufacturing a thin film transistor having high resolution and high pattern accuracy with high production efficiency. Particularly disclosed is a method for manufacturing a thin film transistor wherein there is prevented deterioration of semiconductor properties in a plating step for electrode formation. This method is characterized in that a source electrode or a drain electrode is formed by such a process wherein a protective film is formed on an organic semiconductor layer, then a plating catalyst pattern is formed thereon by supplying a liquid containing a plating catalyst, and then a plating agent is brought into contact with the pattern.

Method for manufacturing thin film transistor

An objective is to provide an organic thin film transistor material exhibiting an excellent property as a transistor together with reduced aging degradation, and also to provide an organic thin film transistor, a field-effect transistor, a switching element, an organic semiconductor material and an organic semiconductor film employing the organic thin film transistor material. Disclosed is an organic thin film transistor material possessing a compound represented by the following Formula (1). where A composed of a condensed ring formed with a 6 membered aromatic cycle or a 6 membered aromatic heterocycle represents C&#x2014;R, N or P; at least one of As is N or P; R represents a hydrogen atom, a halogen atom or a substituent; and R may be bonded with other Rs with each other to form a ring.

Organic thin film transistor material, organic thin film transistor, field-effect transistor, switching element, organic semiconductor material and organic semiconductor film

An organic semiconductor material comprising a compound having a substructure represented by Formula (10): wherein B represents a unit having a thiazole ring, Aand Aeach independently represent a unit having an alkyl group as a substituent, Arepresents a divalent linking group, nrepresents an integer 1-20, nand neach independently represent an integer of 0-20, respectively, and nrepresents an integer of 0-10.

Organic semiconductor material, organic transistor, field effect transistor, switching device and thiazole compound

Disclosed are an organic thin-film transistor and a manufacturing method thereof, the organic thin-film transistor comprising a support and provided thereon, a gate electrode, an insulation layer, a source electrode, a drain electrode, and an organic semiconductor layer, the support comprising at least one of resins, and the organic semiconductor layer containing at least one of organic semiconducting materials, wherein a phase transition temperature of one of the organic semiconducting materials is not more than a glass transition point of one of the resins.

Organic thin-film transistor and manufacturing method thereof

It is an object of the present invention to provide an organic thin-film transistor exhibiting high carrier mobility and a manufacturing method thereof. Disclosed is an organic thin-film transistor possessing a film having a contact angle against pure water of a surface of not less than 50&#xb0;, wherein an organic semiconductor layer is formed on the film prepared by a CVD (chemical vapor deposition) method employing a reactive gas.

Manufacturing method for thin-film transistor

Disclosed is an organic semiconductor composition containing particles and an organic semiconducting compound combining with the particles.

Organic semiconductor composition, organic semiconductor element, and their manufacturing method

Disclosed are a process of manufacturing a thin-film transistor sheet and a thin-film transistor sheet manufactured by the process, the process comprising the steps of providing a gate busline on a substrate, providing, on the surface of the substrate on the gate busline side, an insulation layer capable of receiving a fluid electrode material, supply the fluid electrode material to the insulation layer, the fluid electrode material being allowed to permeate the insulation layer, forming a gate electrode from the permeated fluid electrode material to be in contact with the gate busline, forming a gate insulating layer on the gate electrode, and forming a semiconductor layer on the gate insulating layer.

Thin-film transistor, thin-film transistor sheet and their manufacturing method

A thin-film transistor, a thin-film transistor sheet, an electric circuit, and a manufacturing method thereof are disclosed, the method comprising the steps of forming a semiconductor layer by providing a semiconductive material on a substrate, b) forming an insulating area, which is electrode material-repellent, by providing an electrode material-repellent material on the substrate, and c) forming a source electrode on one end of the insulating area and a drain electrode on the other end of the insulating area, by providing an electrode material.

Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit

Disclosed are a process of manufacturing a thin-film transisitor sheet and a thin-sheet transistor sheet manufactured by the process, the process comprising providing a gate busline on a substrate, providing, on the surface of the substrate on the gate busline side, an insulation layer capable of receiving a fluid electrode material, supplying the fluid electrode material to the insulation layer, the fluid electrode material being allowed to permeate the insulation layer, forming a gate electrode from the permeated fluid electrode material to be in contact with the gate busline, forming a gate insulating layer on the gate electrode, and forming a semiconductor layer on the gate insulating layer.

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Hachioji, Japan

Katsura Hirai