Sumitomo Metal Industries, Inc.

Nec Corporation

Katsuo Katayama

Takeshi Akimoto

Hiroshi Mabuchi

Toshihiro Hayami

Kyoichi Komachi

Kyouichi Komachi

Hideo Ida

Naohiko Takeda

Kouichi Iio

Tomomi Murakami

Junya Tsuyuguchi

Plasma processing apparatus utilizing a microwave window having a

Plasma processing apparatus and plasma processing method

A plasma processing apparatus includes a conductive thin film provided on a surface of a microwave introducing member which is exposed to a processing chamber, in which an object to be processed is placed. The conductive thin film is provided at the entire portion excluding a transmission portion, through which microwaves pass into the processing chamber. The conductive thin film is grounded to act as an electrode.

Plasma processing apparatus

A plasma processing apparatus includes a microwave introducing member, which is provided with a microwave transmission opening through which microwaves pass into a processing chamber. The microwave introducing member is also provided at a transmission opening with a dielectric member. Preferably, the dielectric member is formed to have a relative dielectric constant of 4 to 10 and an insulation resistance of 10.sup.8 to 10.sup.12 .OMEGA..

Plasma processing apparatus having a protected microwave transmission

A microwave plasma processing system, wherein a conductor disposed for controlling the anisotropy and the acceleration energy of ions in a plasma has inside a flow path for reactant gasses and a plurality of holes through which the gasses are to be blown toward a sample holder. A microwave plasma processing system, wherein the ratio of the total area of microwave transmission holes to the area of a conductor is set to be in a range of 0.25 to 0.65. A microwave plasma processing system, wherein each microwave transmission hole formed in a conductor has a dimension in the microwave traveling direction greater than that in a direction perpendicular to the traveling direction.

Microwave plasma processing system

A microwave plasma processing system has heating means for heating the wall of a reaction chamber, and an adhesion preventing member in which a cylinder disposed so as to be in contact with the inner face of a wall of the reaction chamber and a microwave reflecting plate having a gas discharge hole are integrally formed. A microwave plasma processing system has heating means for heating the wall of a reaction chamber, and a microwave reflecting plate which is attached to the inner face of a wall of the reaction chamber and which has a gas discharge hole.

Growing community of inventors

Amagasaki, Japan

Katsuo Katayama