Renesas Technology Corp.

Renesas Electronics Corporation

Hitachi, Ltd.

Katsuo Arai

Takuya Nakajo

Hidemasa Kagii

Ichio Shimizu

Akira Muto

Hiroshi Sato

Keiichi Okawa

Hiroyuki Nakamura

Masahiko Osaka

Toshiaki Ishii

Ryoichi Kajiwara

Shigehisa Motowaki

Hiroi Oka

Kazutoshi Ito

Kazuya Takahashi

Tadatoshi Danno

Nobuya Koike

Izumi Ochiai

Atsushi Fujiki

Masahiro Miyagi

Yoshio Nozawa

Sumio Okada

Yukio Kitayama

Katsuharu Uehara

Takahiko Deguchi

Takashi Ooba

Mayumi Kaneko

Keikichi Morita

Tamotsu Nakayama

In a structure of a semiconductor device, a Si chip and a metal leadframe are jointed by metallic bond via a porous joint layer made of high conductive metal, having a three-dimensional network structure and using Ag as a bonding material, and a film containing Zn oxide or Al oxide is formed on a surface of a semiconductor assembly contacting to a polymer resin. In this manner, by the joint with the joint layer having the porous structure mainly made of Ag, thermal stress load of the Si chip can be reduced, and fatigue life of the joint layer itself can be improved. Besides, since adhesion of the polymer resin to the film can be enhanced by the anchor effect, occurrence of cracks in a bonding portion can be prevented, so that a highly-reliable Pb-free semiconductor device can be provided.

Semiconductor device and method of manufacturing the same

The radiation performance of a resin sealed semiconductor package is enhanced and further the fabrication yield thereof is enhanced. A drain terminal coupled to the back surface drain electrode of a semiconductor chip is exposed at the back surface of an encapsulation resin section. Part of the following portion and terminal is exposed at the top surface of the encapsulation resin section: the first portion of a source terminal coupled to the source pad electrode of the semiconductor chip and a gate terminal coupled to the gate pad electrode of the semiconductor chip. The remaining part of the second portion of the source terminal and the gate terminal is exposed at the back surface of the encapsulation resin section. When this semiconductor device is manufactured, bonding material and a film member are placed between the drain terminal and the semiconductor chip. At the same time, paste-like bonding material and a film member are placed between the source terminaland gate terminal and the semiconductor chip. The paste-like bonding material is cured and turned into bonding material. As the result of use of the film members, variation in the thickness of the bonding material is suppressed.

Manufacturing method of resin-sealed semiconductor device

A semiconductor chip is sealed by resin without covering an outer terminal of a semiconductor device having a power transistor. A semiconductor chip having a power transistor is housed within a recess of a metal cap while a drain electrode on a first surface of the semiconductor chip is bonded to a bottom of the recess via a connection material. A gate electrode and a source electrode are formed on a second surface opposite to the first surface of the semiconductor chip, and the gate electrode and the source electrode are bonded with metal plate terminalsG,S via connection materials. In addition, the semiconductor chip is sealed by a resin sealing body with mounting-surfaces of the metal plate terminalsG,S being exposed. Mounting surfaces of the metal plate terminalsG,S and a third part of the metal cap are bonded to electrodes on a mounting boardvia connection materialsand

A semiconductor device in the form of a resin sealed semiconductor package is disclosed, wherein a gate terminal connected to a gate pad electrode formed on a surface of a semiconductor chip and a source terminal connected to a source pad electrode formed on the chip surface exposed to a back surface of a sealing resin portion, a first portion of a drain terminal connected to a back-surface drain electrode of the semiconductor chip is exposed to an upper surface of the sealing resin portion, and a second portion of the drain terminal formed integrally with the first portion of the drain terminal is exposed to the back surface of the sealing resin portion. When forming the sealing resin portion in such a semiconductor device, first the sealing resin portion is formed so as to also cover an upper surface of the first portion of the drain terminal and thereafter the upper surface side of the sealing resin portion is polished by liquid honing, thereby allowing the upper surface of the first portion of the drain terminal to be exposed on the upper surface of the sealing resin portion. Both heat dissipating property and production yield of the semiconductor device are improved.

Manufacturing method of semiconductor device

A semiconductor chip is sealed by resin without covering an outer terminal of a semiconductor device having a power transistor. A semiconductor chip having a power transistor is housed within a recess of a metal cap while a drain electrode on a first surface of the semiconductor chip is bonded to a bottom of the recess via a connection material. A gate electrode and a source electrode are formed on a second surface opposite to the first surface of the semiconductor chip, and the gate electrode and the source electrode are bonded with metal plate terminals. In addition, the semiconductor chip is sealed by a resin sealing body with mounting-surfaces of the metal plate terminals being exposed. Mounting surfaces of the metal plate terminals and a third part of the metal cap are bonded to electrodes on a mounting board.

A method of manufacturing a semiconductor device comprises a step of preparing a substrate in which a plurality of electrode members are individually placed on one main surface thereof in separated form, a step of placing a semiconductor chip on the one main surface of the substrate and electrically connecting a plurality of electrodes formed on one main surface of the semiconductor chip and the plurality of electrode members respectively, a step of forming a resin encapsulater for sealing the semiconductor chip and the plurality of electrode members on the one main surface of the substrate, and a step of separating the semiconductor chip and the plurality of electrode members from the substrate together with the resin encapsulater.

Semiconductor device manufacturing method wherein electrode members are exposed from a mounting surface of a resin encapsulator

A chip 12 having an electric circuit and a plurality of leads 8 connected electrically with the chip 12 are molded in a resin-sealed package 46 by a molding material containing a main component of a resin, by introducing a molding compound sheet 20 into the cavities 33 of molds 31, 32 before the molds are clamped, by melting the molding compound sheet 20 in the cavities 33 into a liquid molding material 45 after the mold clamping action to pressure fill up the inside of the cavities 33, and by setting the liquid molding material 45 integrally.

Process for manufacturing semiconductor integrated circuit device, and

An apparatus for producing various heat exchangers is disclosed in which a plurality of heat exchangers disposed side by side are formed at once. A series of manufacturing stations for working heat exchanger components such as fins and tubes and for opening the tubes are arranged in an endless manner to thereby automatically carry out the production steps with a high productivity while meeting various requirements of the specifications of the heat exchangers with a high flexibility.

Apparatus for assembling fins and tubes for heat exchangers

Growing community of inventors

Takasaki, Japan

Katsuo Arai