Denki Kagaku Kogyo Kabushiki Kaisha

Katsunori Terano

Takeshi Gotoh

Akira Miyai

Yoshitaka Taniguchi

Yusaku Harada

Yutaka Hirashima

Isao Sugimoto

Nobuyuki Yoshino

Syoji Takakura

Yoshihiko Tujimura

Yasuhito Hushii

Disclosed is an aluminum nitride substrate for a circuit board, the substrate having aluminum nitride crystal grains with an average grain size of 2 to 5 &#x3bc;m and a thermal conductivity of at least 170 W/m&#xb7;K. The aluminum nitride substrate does not include a dendritic grain boundary phase and has a breakdown voltage of at least 30 kV/mm at 400&#xb0; C. Also provided is a method for producing the aluminum nitride substrate, including the steps of heating a raw material containing an aluminum nitride powder to 1500&#xb0; C. at a pressure of at most 150 Pa, then increasing and holding the temperature at 1700 to 1900&#xb0; C. in a pressurized atmosphere of at least 0.4 MPa using a non-oxidizing gas, then cooling to 1600&#xb0; C. at a cooling rate of at most 10&#xb0; C./min.

Aluminum nitride substrate for circuit board and production method thereof

A circuit substrate which has a ceramic substrate and an Al circuit comprising Al or an Al alloy bonded to said ceramic substrate via a layer comprising Al and Cu.

Circuit substrate

Growing community of inventors

Omuta, Japan

Katsunori Terano