Tdk Corporation

Katsunori Osanai

Tohru Inoue

Atsushi Iijima

Makoto Yoshida

Akifumi Kamijima

Kenichi Yoshida

Takashi Ota

Kyung-Ku Choi

Daisuke Iwanaga

Masaki Sobu

Takaaki Domon

Kenji Endou

Takashi Aoyagi

Jotaro Akiyama

Yoshikazu Kihara

Yukio Hirokawa

A magnetically actuated MEMS switchincludes a first magnetic core portion, a first signal line, a first contact point, a second magnetic core portion, a second signal line, a second contact point, and a first coil portionand a second coil portionserving as a magnetic field applying portion that causes a current to flow in conductor coil to apply a magnetic field to the first magnetic core portionand the second magnetic core portion. The first contact pointis displaced depending on the presence or absence of a magnetic field applied by the magnetic field applying portion. Connection and disconnection between the first contact pointand the second contact pointare switched in response to displacement of the first contact point

Magnetically actuated MEMS switch

A MEMS switch includes a first signal line provided in a first beam, a first GND adjacent to the first signal line, a second signal line provided in a second beam, and a second GND adjacent to the second signal line. A contact terminal is fixed to any one of the first signal line and the second signal line and performs connection between the first signal line and the second signal line according to deformation of the first beam.

MEMS switch and electronic device

A high-frequency transmission line in which the alternating-current resistance is low is provided. A high-frequency transmission lineis a high-frequency transmission lineto transmit an alternating-current electric signal, and contains metal and carbon nanotube, and the carbon nanotube is unevenly distributed at a peripheral partof a cross-section that is of the high-frequency transmission lineand that is perpendicular to a transmission direction of the alternating-current electric signal.

High-frequency transmission line, antenna and electronic circuit board

A high-frequency transmission line in which the alternating-current resistance is low and that is hard to disconnect is provided. A high-frequency transmission lineis a high-frequency transmission lineto transmit an alternating-current electric signal, and contains metal and carbon nanotube, and the carbon nanotube is unevenly distributed at a central partof a cross-section that is of the high-frequency transmission lineand that is perpendicular to a transmission direction of the alternating-current electric signal.

A surface acoustic wave element, a surface acoustic wave device, a duplexer, and a method of making a surface acoustic wave element which significantly restrain characteristics from deteriorating are provided. The surface acoustic wave element in accordance with the present invention comprises a piezoelectric substrate, and an IDT electrode formed on the piezoelectric substrate, whereas the piezoelectric substrate has a volume resistivity of not less than 3.6&#xd7;10&#x3a9;&#xb7;cm and not more than 1.5&#xd7;10&#x3a9;&#xb7;cm. This surface acoustic wave element comprises the piezoelectric substrate having a low volume resistivity, whereas the volume resistivity is reduced to 1.5&#xd7;10&#x3a9;&#xb7;cm or less. Therefore, discharging is restrained from occurring between IDT electrodes, whereby characteristics are significantly kept from deteriorating. Also, since the volume resistivity of the piezoelectric substrate is not less than 3.6&#xd7;10&#x3a9;&#xb7;cm, the IDT electrodes are significantly prevented from short-circuiting with each other.

Surface acoustic wave element, surface acoustic wave device, duplexer, and method of making surface acoustic wave element

A SAW device comprises a single crystal piezo-electric strate (made, for example, of LiTaOor LiNbO), and an interdigital transducer (IDT) formed of a material mainly containing Al and disposed on the piezo-electric substrate. The piezo-electric strate contains an additive (for example, Fe, Mn, Cu, Ti), and an orientation rotated by an angle in a range of 42&#xb0; to 48&#xb0; (more preferably 46&#xb0;&#xb1;0.3&#xb0;) from a Y-axis toward a Z-axis about an X-axis. The IDT presents a normalized thickness h/&#x3bb; (h: thickness of electrode, and &#x3bb;: spacing between digits of the IDT) of 7% to 11%. A more appropriate substrate cut angle can be shown for the SAW device which employs a piezo-electric substrate containing an additive, to improve the electric characteristics thereof.

Growing community of inventors

Tokyo, Japan

Katsunori Osanai