Canon Kabushiki Kaisha

Katsunori Hirota

Takeshi Ichikawa

Takahiro Suzuki

Tsutomu Tange

Yusuke Onuki

Takumi Ogino

Masashi Kusukawa

Yoshiei Tanaka

Takanori Watanabe

Hiroaki Kobayashi

Nobuyuki Endo

Hiroaki Naruse

Hideaki Ishino

Akira Ohtani

Kazuo Yamazaki

Kazuaki Tashiro

Akihiro Shimizu

Keiichi Sasaki

Nobutaka Ukigaya

Satoshi Ogawa

Seiichi Tamura

Tadashi Sawayama

Takuya Hara

Kazuo Kokumai

A semiconductor apparatus includes a semiconductor layer that includes a photoelectric conversion unit disposed between a front surface and a back surface and a transistor disposed at the front surface, and a dielectric film in contact with the back surface, wherein the semiconductor layer includes a region extending 100 nm from the back surface, the region having boron concentrations whose maximum value is more than 1&#xd7;10[atoms/cm].

Semiconductor apparatus and method for producing semiconductor apparatus

A semiconductor apparatus includes a first semiconductor layer, a second semiconductor layer overlapping the first semiconductor layer, and a wiring structure arranged between them. The second semiconductor layer is provided with p-type MIS transistor. A crystal structure of the first semiconductor layer has a first crystal orientation and a second crystal orientation in direction along a principal surface of the first semiconductor layer. A Young's modulus of the first semiconductor layer in a direction along the first crystal orientation is higher than that in a direction along the second crystal orientation. An angle formed by the first crystal orientation and a direction in which a source and a drain of the p-type MIS transistor are arranged is more than 30 degrees and less than 60 degrees, and an angle formed by the second crystal orientation and that direction is 0 degrees or more and 30 degrees or less.

Semiconductor apparatus and device with semiconductor layer having crystal orientations that differ in Young's modulus and relative angle

A semiconductor device comprising: a substrate; a semiconductor layer; and a wiring structure section between the substrate and the semiconductor layer, the wiring structure section including a plurality of stacked wiring layers and a plurality of stacked insulating films, the wiring structure section including an electrode, wherein an opening for connecting a member to the electrode is formed in the semiconductor layer and the wiring structure section; the semiconductor layer has an isolation region in which an insulating film is embedded and which surrounds the opening; the wiring structure section has a ring which is formed of the plurality of wiring layers and surround the opening; and a distance between the opening and the ring closest to the opening is larger than a distance between the opening and the isolation region closest to the opening.

Semiconductor device, apparatus, and method for producing semiconductor device

A silicon compound film that is any one of a silicon oxide film, a silicon nitride film, and a silicon carbide film, and a metal compound film lying between the silicon compound film and a semiconductor layer are arranged above a main face. The silicon compound film and the metal compound film extend into a first trench, and the metal compound film extends into a second trench. When a distance from the bottom of the second trench to the silicon compound film is expressed as 'Hb', and a distance from the main face to the silicon compound film is expressed as 'Hd', the respective distances satisfy the condition &#x201c;Hd&#x3c;Hb&#x201d;.

Photoelectric conversion apparatus and equipment

An imaging device includes a substrate including a photoelectric conversion portion and an insulating layer formed to cover at least a part of the photoelectric conversion portion. The insulating layer contains silicon, nitrogen, and chlorine. In an embodiment, in at least a part of the insulating layer, a ratio of silicon atoms bonded to one, two, or three nitrogen atoms and not bonded to an oxygen atom is not more than 20% in silicon atoms contained in at least the part.

Imaging device, method of manufacturing the same, and apparatus

An imaging apparatus includes a substrate including a photoelectric conversion portion; and a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion. The silicon nitride layer contains chlorine. An N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33.

Imaging apparatus, method of manufacturing the same, and device

A photoelectric conversion section contains a semiconductor element having a laminated structure which contains an electroconductor, a semiconductor, and an insulator provided between the electroconductor and the semiconductor, in which the insulator is a silicon oxide film containing nitrogen in a main portion located between the electroconductor and the semiconductor.

Photoelectric conversion apparatus, image pickup system, and method for manufacturing photoelectric conversion apparatus

There is provided an imaging device manufacturing method contributing to improved reliability and yield. The method includes forming a first insulating film on a polysilicon film and then removing a portion of the first insulating film formed on a second main surface and a portion of the first insulating film formed on a side surface of the substrate to expose a polysilicon film. After the polysilicon film is exposed, a second insulating film is formed on the first main surface by a plasma chemical vapor deposition (CVD) method.

Imaging device manufacturing method

An image pickup apparatus includes a semiconductor layer that constitutes a pixel circuit region and a peripheral circuit region. An element isolation portion is disposed in the pixel circuit region and the peripheral circuit region, defines an element portion of the semiconductor layer, and contains an insulator. The element isolation portion in the pixel circuit region has a hydrogen concentration 10 times or more higher than the hydrogen concentration of the element isolation portion in the peripheral circuit region.

Image pickup apparatus, image pickup system, and method for manufacturing image pickup apparatus

A photoelectric conversion apparatus includes a charge accumulation region of a first conductivity type, a first semiconductor region of a second conductivity type, a second semiconductor region of the second conductivity type, and an element isolation. The first semiconductor region is arranged so as to extend downward from a portion between the charge accumulation region and the element isolation, and the second semiconductor region includes a portion arranged below the charge accumulation region, and impurity concentration distributions of the charge accumulation region, the first semiconductor region and the second semiconductor region in a depth direction respectively have peaks at depth Rp1, Rp2, and Rp3, and Rp1&#x3c;Rp2&#x3c;Rp3 is satisfied. Impurity concentration C1 of the first semiconductor region at Rp2 is higher than impurity concentration C2 of the second semiconductor region at Rp3.

Photoelectric conversion apparatus and camera

A photoelectric conversion device includes a pixel circuit section including: a first semiconductor region containing a first conductivity type impurity; a second semiconductor region formed in the first semiconductor region by using the first conductivity type impurity; a third semiconductor region formed in the second semiconductor region by using a second conductivity type impurity; and a contact plug formed on the third semiconductor region. A net concentration of the first conductivity type impurity is higher in the second semiconductor region than in the first and third semiconductor regions. In the second and third semiconductor regions, a distance between the contact plug and a position where the concentration of the second conductivity type impurity is maximum is equal to or less than a distance between the contact plug and a position where the concentration of the first conductivity type impurity is maximum.

Photoelectric conversion device and manufacturing method of the same

A method of manufacturing a photoelectric conversion apparatus which includes a pixel circuit section having a well where a photoelectric conversion element and an amplification element configured to generate a signal based on an amount of charge generated in the photoelectric conversion element are arranged, and a peripheral circuit section having a MOS transistor. The method includes forming a dielectric film for covering the photoelectric conversion element, the amplification element, and a gate electrode of the MOS transistor and forming, by etching the dielectric film, a side spacer by remaining a portion of the dielectric film on a side surface of the gate electrode while protecting by a resist, wherein an opening is formed in the dielectric film of the pixel circuit section with the etching, and a contact for defining a potential of the well is formed through the opening.

Method of manufacturing photoelectric conversion apparatus including pixel well contact

Each of a plurality of pixel circuits is an insulated gate transistor and includes a first kind transistor having a maximum value of a gate potential difference to be applied equal to or higher than a first value. Each of a plurality of analog signal processing circuits is an insulated gate transistor and includes a second kind transistor having a maximum value of a gate potential difference to be applied equal to or lower than a second value that is lower than the first value. Each of a plurality of analog signal processing circuits does not include an insulated gate transistor having a maximum value of a gate potential difference to be applied not higher than the second value.

Imaging apparatus and imaging system

A photoelectric conversion device comprises an n-type surface region, a p-type region which is formed under the surface region, and an n-type buried layer which is formed under the p-type region, wherein the surface region, the p-type region, and the buried layer form a buried photodiode, and a diffusion coefficient of a dominant impurity of the surface region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.

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Yamato, Japan

Katsunori Hirota