Mitsubishi Denki Kabushiki Kaisha

Ryoden Semiconductor System Engineering Corporation

Other

Ryoden Semiconductor System Eengineering Corporation

Katsunori Asai

Akiyoshi Sawai

Masaki Watanabe

Jun Shibata

Masatoshi Yasunaga

Kazuhiko Kurafuchi

Hiroshi Seki

Tomoaki Hashimoto

Yoshikazu Narutaki

Yoshihiro Tomita

Hideyuki Ichiyama

Kisamitsu Ono

The minimum spacing between wires disposed on a printed circuit board of a printed circuit board ball grid array package is reduced. Wiring layers are narrower than in the prior art because they are not plated and because only one metal layer is plated on the wiring layers. The narrower wiring layers can be formed easily with small spaces between wires.

Method for manufacturing semiconductor device

Package for semiconductor device laminated printed circuit boards

A semiconductor device includes a substrate having a recess; a semiconductor chip disposed in the recess; a plurality of external electrodes disposed on the substrate; a lid covering the recess; and a heat radiator disposed between the semiconductor chip and the substrate for transmitting heat generated by the semiconductor chip to the substrate for radiation.

Packaged semiconductor chip

A semiconductor device for life enhancement of electrical connections between a semiconductor chip and a mounting substrate. Protruding electrodes, each including a bump electrode and a land electrode, are located on the lower surface of an LSI chip. The bump electrodes are substantially spherical and have a first thickness. Connecting terminals of substantially spherical configuration and having a second thickness are directly connected to corresponding land electrodes by melting. Connecting patterns are located on the upper surface of a wiring board which is larger in area than the LSI chip in plan configuration, and external electrodes, each including a connecting pattern and an external electrode, are located on the lower surface of the wiring board. The external electrodes are substantially spherical and have a third thickness. The connecting patterns are directly connected to corresponding connecting terminals, respectively, by melting.

Flip chip semiconductor device

Growing community of inventors

Hyogo, Japan

Katsunori Asai