Murata Manufacturing Co., Ltd.

Katsunari Nakazawa

Yuji Takematsu

Takanori Uejima

Yutaka Sasaki

Motoji Tsuda

Naoya Matsumoto

Masahide Takebe

Tetsuro Harada

Dai Nakagawa

Mitsunori Samata

Yoshiaki Sukemori

Yuuki Fukuda

Yuki Fukuda

Takeshi Kogure

Hiroyuki Kani

Shou Matsumoto

Assuming transmission signals in different frequency bands are simultaneously transmitted, the isolation lowering is suppressed. A radio frequency module includes a first power amplifier, a second power amplifier, a first switch, a second switch, a third switch, and a mounting substrate. The first switch, the second switch, and the third switch are configured to be capable of simultaneously connecting the first power amplifier and the second power amplifier to an antenna terminal. The first switch is disposed between the second switch and the third switch in plan view of the mounting substrate from a thickness direction. The second switch and the third switch are disposed on the same main surface out of the first main surface and the second main surface of the mounting substrate.

Radio frequency module and communication device

A power amplifier is capable of operating in a first power mode and a second power mode with a gain lower than a gain of the first power mode. The power amplifier is connected to a first common terminal of the first switch. Two or more filters are connected to two or more first selection terminals other than at least one first selection terminal among three or more first selection terminals of the first switch. The at least one first selection terminal of the first switch and at least one second selection terminal of a second switch are connected. The first switch is capable of switching between a first path passing through at least one of the two or more filters and a second path not passing through any of the two or more filters but passing through the at least one first selection terminal.

High frequency module and communication apparatus

A high-frequency module includes a mounting substrate having main surfacesanda first circuit component mounted on the main surfacea second circuit component mounted on the main surfacean external connection terminal arranged on the main surfaceside relative to the main surfacewith respect to the mounting substrate, a long via conductor connected to the first circuit component, passing through the mounting substrate, and having a substantially long shape when the mounting substrate is viewed in a plan view, and a metal block arranged on the main surfaceside relative to the main surfacewith respect to the mounting substrate and connecting the long via conductor and the external connection terminal. When the mounting substrate is viewed in a plan view, the first circuit component overlaps the long via conductor and the metal block overlaps the long via conductor.

High-frequency module and communication apparatus

A high frequency module includes a transmission power amplifier, a bump electrode connected to the transmission power amplifier, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view of the mounting board, a board main part placed outside the via conductor, and an insulating part placed inside the via conductor, and the bump electrode and the via conductor are connected while at least partially overlapping each other in the foregoing plan view, and the board main part and the insulating part are each composed of an insulating material of the same kind.

High frequency module and communication device

A radio-frequency module includes: a transmission power amplifier that includes first and second amplification transistors that are cascade connected to each other; and a mounting substrate that has first and second main surface that face each other, the transmission power amplifier being mounted on the first main surface. The first amplification transistor is arranged in a final stage and has a first emitter terminal. The second amplification transistor is arranged in a stage preceding the first amplification transistor and has a second emitter terminal. The mounting substrate has first to fourth ground electrode layers in order of proximity to the first main surface. The first emitter terminal and the second emitter terminal are not electrically connected to each other via an electrode on the first main surface and are not electrically connected to each other via the first ground electrode layer.

Radio-frequency module and communication device

A high frequency module includes a transmission power amplifier, a bump electrode connected to a principal surface of the transmission power amplifier and having an elongated shape in a plan view of the principal surface, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view, the length direction of the bump electrode and the length direction of the via conductor are aligned in the plan view, and the bump electrode and the via conductor are connected in an overlapping area where the bump electrode and the via conductor overlap at least partially in the plan view, and the overlapping area is an area elongated in the length direction.

A communication module includes a power amplifier that amplifies a transmission signal having a first communication system or a second communication system and outputs an amplified signal to a signal path, a switch circuit that switches between a signal path for the first communication system and a signal path for the second communication system and outputs the amplified signal to one of the signal paths for the first communication system and the second communication system in accordance with a control signal supplied in accordance with the communication system of the transmission signal, and an impedance-matching network disposed between the power amplifier and the switch circuit, the impedance-matching network including a first variable capacitance element. The first variable capacitance element has a capacitance value that is controlled in accordance with the communication system of the transmission signal.

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Kyoto, Japan

Katsunari Nakazawa